050-7390 Rev A 3-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D
3
PAK Package
APT1204R7BFLL
APT1204R7SFLL
1200V 3.5A 4.700
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 1.75A)
Zero Gate Voltage Drain Current (V
DS
= 1200V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 960V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1200
4.70
250
1000
100
3
5
APT1204R7BFLL_SFLL
1200
3.5
14
30
40
135
1.08
-55 to 150
300
3.5
10
425
POWER MOS 7
R
FREDFET
TO-247
D
3
PAK
DYNAMIC CHARACTERISTICS
APT1204R7 BFLL_SFLL
050-7390 Rev A 3-2004
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Z
JC
, THERMAL IMPEDANCE (C/W)
0.9
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
3.5A)
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -I
D
3.5A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -I
D
3.5A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -I
D
3.5A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
3.5
14
1.3
18
T
j
= 25C
250
T
j
= 125C
515
T
j
= 25C
.5
T
j
= 125C
1.1
T
j
= 25C
8.3
T
j
= 125C
11.5
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.90
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 69.39mH, R
G
=
25
, Peak I
L
= 3.5A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
I
D
3.5A
di
/
dt
700A/s
V
R
1200
T
J
150
C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 600V
I
D
= 3.5A @ 25C
V
GS
= 15V
V
DD
= 600V
I
D
= 3.5A @ 25C
R
G
= 1.6
MIN
TYP
MAX
716
900
132
200
36
60
31
50
4
5
21
40
7
14
2
4
20
30
24
50
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-7390 Rev A 3-2004
Typical Performance Curves
Graph Deleted
APT1204R7 BFLL_SFLL
I
D = 0.5 ID [Cont.]
V
GS = 10V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D [Cont.]
6V
6.5V
7V
5V
VGS =15,10 & 8V
5.5V
APT1204R7 BFLL_SFLL
050-7390 Rev A 3-2004
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
1
10
100
1200
0
10
20
30
40
50
0
5
10
15
20
25
30
35
40 45
0.3
0.5
0.7
0.9
1.1
1.3
1.5
14
10
5
1
0.5
16
12
8
4
0
Crss
Ciss
Coss
TJ =+150C
TJ =+25C
VDS=250V
VDS=100V
VDS=400V
I
D = ID [Cont.]
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100S
3,000
1,000
500
100
50
10
100
50
10
1
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
D
3
PAK Package Outline
PDF 
ZIP