050-7412 Rev E 1-2006
APT13GP120B_S(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
APT13GP120B_S(G)
1200
30
41
20
50
50A @ 960V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
Reverse Bias Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
500
3000
100
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 600V, 10A
Low Gate Charge
50 kHz operation @ 600V, 16A
Ultrafast Tail Current shutoff
RBSOA Rated
POWER MOS 7
IGBT
1200V
APT13GP120B
APT13GP120S
APT13GP120BG* APT13GP120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
G
C
E
TO-2
47
G
C
E
D
3
PAK
G
C
E
B
S
050-7412 Rev E 1-2006
APT13GP120B_S(G)
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
C/W
gm
MIN
TYP
MAX
.50
N/A
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 13A
T
J
= 150C, R
G
= 5, V
GE
=
15V, L = 100H,V
CE
= 960V
Inductive Switching (25C)
V
CC
= 600V
V
GE
= 15V
I
C
= 13A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
= 600V
V
GE
= 15V
I
C
= 13A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
MIN
TYP
MAX
1145
90
15
7.5
55
8
26
50
9
12
28
34
115
330
165
9
12
70
200
225
710
840
UNIT
pF
V
nC
A
ns
J
ns
J
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7412 Rev E 1-2006
APT13GP120B_S(G)
TYPICAL PERFORMANCE CURVES
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
T
J
= 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 125C
T
J
= 25C
T
J
= -55C
40
35
30
25
20
15
10
5
0
40
35
30
25
20
15
10
5
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
T
J
= 125C
T
J
= 25C
T
J
= -55C
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25C)
FIGURE 2, Output Characteristics (T
J
= 125C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
0
10
20
30
40
50
60
6
8
10
12
14
16
-55 -25
0
25
50
75 100 125
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
T
J
= 125C
T
J
= 25C
T
J
= -55C
V
CE
= 240V
V
CE
= 600V
V
CE
= 960V
I
C
= 13A
T
J
= 25C
I
C
= 26A
I
C
= 13A
I
C
= 6.5A
I
C
= 26A
I
C
= 13A
I
C
= 6.5A
40
35
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
60
50
40
30
20
10
0
050-7412 Rev E 1-2006
APT13GP120B_S(G)
V
GE
=15V,T
J
=125C
V
GE
=15V,T
J
=25C
V
CE
=
600V
R
G
=
5
L = 100 H
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 600V
V
GE
= +15V
R
G
= 5
R
G
=
5, L
=
100
H, V
CE
=
600V
V
CE
= 600V
T
J
= 25C
or
125C
R
G
= 5
L = 100 H
V
GE
= 15V
T
J
=
25 or 125C,V
GE
=
15V
V
CE
= 600V
V
GE
= +15V
R
G
= 5
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
0
10
20
30
40
50
25
50
75
100
125
R
G
=
5, L
=
100
H, V
CE
=
600V
T
J
=
125C, V
GE
=
15V
T
J
=
25C, V
GE
=
15V
100
90
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
0
1600
1400
1200
1000
800
600
400
200
0
1600
1400
1200
1000
800
600
400
200
0
T
J
=
125C
T
J
=
25C
12
10
8
6
4
2
0
30
25
20
15
10
5
0
1400
1200
1000
800
600
400
200
0
1800
1600
1400
1200
1000
800
600
400
200
0
T
J
=
25C
T
J
=
125C
E
on2,
26A
E
off,
26A
E
on2,
13A
E
off,
13A
E
on2,
6.5A
E
off,
6.5A
V
CE
= 600V
V
GE
= +15V
T
J
= 125C
V
CE
= 600V
V
GE
= +15V
R
G
= 5
E
on2,
26A
E
off,
26A
E
off,
13A
E
on2,
13A
E
on2,
6.5A
E
off,
6.5A
050-7412 Rev E 1-2006
APT13GP120B_S(G)
TYPICAL PERFORMANCE CURVES
0.60
0.50
0.40
0.30
0.20
0.10
0
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
3,000
1,000
500
100
50
10
1
60
50
40
30
20
10
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200
400
600
800
1000
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5
10
15
20
25
30
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125
C
T
C
= 75
C
D = 50 %
V
CE
= XXXV
R
G
= 5
181
100
50
10
0.5
0.1
0.05
F
max
=
min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
JC
C
res
C
oes
C
ies
0.216
0.284
0.006F
0.161F
Power
(watts)
RC MODEL
Junction
temp. (C)
Case temperature. (C)
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
050-7412 Rev E 1-2006
APT13GP120B_S(G)
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT15DQ120
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
C
o
l
l
e
c
t
o
r
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
e3 SAC: Tin, Silver, Copper
TO-268 (D
3
) Package Outline
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
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ZIP