050-7599 Rev B 10-2005
APT15GN120K(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 600A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
GINT
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT15GN120K(G)
1200
30
45
22
45
45A @ 1200V
195
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive V
CE(ON)
temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
1200V Field Stop
Trench Gate: Low V
CE(on)
Easy Paralleling
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
1200
5.0
5.8
6.5
1.4
1.7
2.1
2.0
100
TBD
120
N/A
1200V
APT15GN120K
APT15GN120KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
G
C
E
TO-220
050-7599 Rev B 10-2005
APT15GN120K(G)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
Gint
nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
C/W
gm
MIN
TYP
MAX
.64
1.18
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 15A
T
J
= 150C, R
G
= 4.3
7
, V
GE
=
15V, L = 100H,V
CE
= 1200V
Inductive Switching (25C)
V
CC
= 800V
V
GE
= 15V
I
C
= 15A
R
G
= 4.3
7
T
J
= +25C
Inductive Switching (125C)
V
CC
= 800V
V
GE
= 15V
I
C
= 15A
R
G
= 4.3
7
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
6
MIN
TYP
MAX
1200
65
50
9.0
90
5
55
45
10
9
150
110
410
730
950
10
9
170
185
475
1310
1300
UNIT
pF
V
nC
A
ns
J
ns
J
050-7599 Rev B 10-2005
APT15GN120K(G)
TYPICAL PERFORMANCE CURVES
250s PULSE
TEST<0.5 % DUTY
CYCLE
15V
9V
8V
7V
10V
T
J
= 125C
T
J
= 25C
T
J
= -55C
T
J
= 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 125C
T
J
= 25C
T
J
= -55C
I
C
= 15A
T
J
= 25C
V
CE
= 600V
V
CE
= 240V
V
CE
=960V
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25C)
FIGURE 2, Output Characteristics (T
J
= 125C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
I
C
= 15A
I
C
= 30A
I
C
= 7.5A
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
I
C
= 30A
I
C
= 15A
I
C
= 7.5A
0
1
2
3
4
5
6
0
2
4
6
8
10
0
4
8
12
16
20
0
20
40
60
80
100
8
10
12
14
16
-50 -25
0
25
50
75
100 125
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
13V
11V
12V
V
GE
= 15V
050-7599 Rev B 10-2005
APT15GN120K(G)
V
GE
=15V,T
J
=125C
V
GE
=15V,T
J
=25C
V
CE
=
800V
R
G
=
4.3
L = 100 H
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=
4.3, L
=
100
H, V
CE
=
800V
V
CE
= 800V
T
J
= 25C
,
T
J
=125C
R
G
= 4.3
L = 100 H
V
GE
= 15V
T
J
=
25 or 125C,V
GE
=
15V
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
0
10
20
30
40
50
0
25
50
75
100
125
R
G
=
4.3, L
=
100
H, V
CE
=
800V
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
3000
2500
2000
1500
1000
500
0
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
T
J
=
125C, V
GE
=
15V
T
J
=
25C, V
GE
=
15V
200
180
160
140
120
100
80
60
40
20
0
300
250
200
150
100
50
0
3500
3000
2500
2000
1500
1000
500
0
3500
3000
2500
2000
1500
1000
500
0
V
CE
= 800V
V
GE
= +15V
R
G
= 4.3
T
J
=
125C
T
J
=
25C
V
CE
= 800V
V
GE
= +15V
R
G
= 4.3
T
J
=
125C
T
J
=
25C
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A
E
on2,
7.5A
E
off,
7.5A
V
CE
= 800V
V
GE
= +15V
T
J
= 125C
V
CE
= 800V
V
GE
= +15V
R
G
= 4.3
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A
E
on2,
7.5A
E
off,
7.5A
050-7599 Rev B 10-2005
APT15GN120K(G)
TYPICAL PERFORMANCE CURVES
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
2,000
1,000
500
100
50
10
50
45
40
35
30
25
20
15
10
5
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200 400 600 800 1000 1200 1400
0.5
0.1
0.05
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
C
ies
C
res
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125
C
T
C
= 75
C
D = 50 %
V
CE
= 800V
R
G
= 4.3
140
100
50
10
6
F
max
=
min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
JC
0.323
0.258
0.0600
0.00192
0.0312
0.389
Power
(watts)
Junction
temp. (C)
RC MODEL
Case temperature. (C)
C
oes
050-7599 Rev B 10-2005
APT15GN120K(G)
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT15DQ120
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
TO-220 (K) Package Outline
e3 100% Sn
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