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Электронный компонент: APT30GF60JU2

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APT30GF60JU2
A
P
T
3
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
1 8




ISOTOP

Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
I
C1
T
C
= 25C
58
I
C2
Continuous Collector Current
T
C
= 100C
30
I
CM
Pulsed Collector Current
T
C
= 25C
110
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
192
W
I
LM
RBSOA clamped Inductive load Current R
G
=11
T
C
= 25C
60
A
IF
AV
Maximum Average Forward Current
Duty cycle=0.5 T
C
= 80C
30
IF
RMS
RMS Forward Current (Square wave, 50% duty)
39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
K
E
C
G


V
CES
= 600V
I
C
= 30A @ Tc = 100C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
- Low
voltage
drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
ISOTOP
Boost chopper
NPT IGBT
K
C
G
E
APT30GF60JU2
A
P
T
3
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
2 8
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 0.25mA
600
V
T
j
= 25C
40
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
1000
A
T
j
= 25C
2.0
2.5
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 30A
T
j
= 125C
2.2
2.8
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 700A
3
4
5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
100
nA

Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
1600
1850
C
oes
Output
Capacitance
150 220
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
90
150
pF
Q
g
Total gate Charge
140
210
Q
ge
Gate Emitter Charge
10
15
Q
gc
Gate Collector Charge
V
GS
= 15V
V
Bus
= 300V
I
C
= 30A
60 90
nC
T
d(on)
Turn-on Delay Time
13
26
T
r
Rise Time
41
80
T
d(off)
Turn-off Delay Time
147
220
T
f
Fall Time
Resistive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 30A
R
G
= 10
W
200
400
ns
T
d(on)
Turn-on Delay Time
17
30
T
r
Rise Time
28
60
T
d(off)
Turn-off Delay Time
242
360
T
f
Fall Time
34
70
ns
E
ts
Total switching Losses
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 30A
R
G
= 10
W
1.2 2 mJ
T
d(on)
Turn-on Delay Time
15
30
T
r
Rise Time
27
50
T
d(off)
Turn-off Delay Time
265
400
T
f
Fall Time
41
80
ns
E
on
Turn-on Switching Energy
0.5
1
E
off
Turn-off Switching Energy
1
2
E
ts
Total switching Losses
Inductive Switching (150C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 30A
R
G
= 10
W
1.5 3
mJ
APT30GF60JU2
A
P
T
3
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
3 8
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
1.6
1.8
I
F
= 60A
1.9
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125C
1.4
V
V
R
= 600V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 600V
T
j
= 125C
500
A
C
T
Junction
Capacitance
V
R
=
200V
44 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =100A/s
T
j
= 25C
23
T
j
= 25C
85
t
rr
Reverse Recovery Time
T
j
= 125C
160
ns
T
j
= 25C
4
I
RRM
Maximum Reverse Recovery Current
T
j
= 125C
8
A
T
j
= 25C
130
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/s
T
j
= 125C
700
nC
t
rr
Reverse Recovery Time
70
ns
Q
rr
Reverse Recovery Charge
1300
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt =1000A/s
T
j
= 125C
30 A


Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.65
R
thJC
Junction
to
Case
Diode
1.21
R
thJA
Junction to Ambient (IGBT & Diode)
20
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage
Temperature
Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g
APT30GF60JU2
A
P
T
3
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
4 8
Typical IGBT Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
T
h
er
m
a
l
Im
p
e
d
a
n
ce (

C
/
W
)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
APT30GF60JU2
A
P
T
3
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
5 8
APT30GF60JU2
A
P
T
3
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
6 8
Typical Diode Performance Curve
APT30GF60JU2
A
P
T
3
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
7 8
APT30GF60JU2
A
P
T
3
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
8 8
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.

ISOTOP
is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Emitter
Gate
Collector
Cathode