050-7162 Rev B 7-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular
T-MAXTM
or TO-264 Package
FAST RECOVERY BODY DIODE
APT30M30B2FLL
APT30M30LFLL
300V 100A 0.030
T-MAXTM
TO-264
B2FLL
LFLL
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 50A)
Zero Gate Voltage Drain Current (V
DS
= 300V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 240V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current
5
@ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
300
0.030
250
1000
100
3
5
APT30M30B2FLL_LFLL
300
100
400
30
40
694
5.56
-55 to 150
300
100
50
3000
050-7162 Rev B 7-2004
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
APT30M30B2FLL_LFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -100A)
Peak Diode Recovery
dv
/
dt
6
Reverse Recovery Time
(I
S
= -100A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -100A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -100A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
100
415
1.3
8
T
j
= 25C
250
T
j
= 125C
500
T
j
= 25C
1.4
T
j
= 125C
4.9
T
j
= 25C
14
T
j
= 125C
25
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.18
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
7
Turn-off Switching Energy
Turn-on Switching Energy
7
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 150V
I
D
= 100A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
150V
I
D
=
100A
@ 25C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25C
V
DD
=
200V, V
GS
= 15V
I
D
=
100A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
200V V
GS
= 15V
I
D
=
100A, R
G
=
5
MIN
TYP
MAX
7030
1895
110
140
41
70
15
22
35
8
925
1345
1055
1485
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 0.60mH, R
G
=
25
, Peak I
L
= 100A
5 The maximum current is limited by lead temperature
6
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
I
D
100A
di
/
dt
700A/s
V
R
300V
T
J
150
C
7 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
050-7162 Rev B 7-2004
APT30M30B2FLL_LFLL
Typical Performance Curves
6V
5.5V
7V
6.5
VGS =15 &10V
8V
7.5V
VGS=10V
VGS=20V
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS(TH)
, THRESHOLD VOLTAGE
B
V
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
25
30
0
2
4
6
8
10
0
20
40
60
80 100 120 140 160 180
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
250
200
150
100
50
0
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS
= 10V @ I
D = 50A
I
D = 50A
V
GS = 10V
250
200
150
100
50
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.0271
0.0656
0.0859
0.00899F
0.0202F
0.293F
Power
(Watts)
Junction
temp. ( "C)
RC MODEL
Case temperature
050-7162 Rev B 7-2004
APT30M30B2FLL_LFLL
1mS
100S
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
1
10
100
300
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
400
100
10
1
16
12
8
4
0
TJ =+150C
TJ =+25C
Crss
Ciss
Coss
10mS
20,000
10,000
1,000
100
10
300
100
10
1
VDS=150V
VDS=60V
VDS=240V
I
D = 100A
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 200V
R
G = 5
T
J = 125C
L = 100H
t
d(on)
t
d(off)
E
on
E
off
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
V
DD = 300V
R
G = 5
T
J = 125C
L = 100H
40
60
80
100
120
140
160
40
60
80
100
120
140
160
40
60
80
100
120
140
160
0
5
10 15 20 25 30
35 40 45 50
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
200
180
160
140
120
100
80
60
40
20
0
5000
4000
300
2000
1000
0
V
DD = 200V
I
D = 100A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD = 200V
R
G = 5
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
050-7162 Rev B 7-2004
APT30M30B2FLL_LFLL
Typical Performance Curves
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
10%
0
t
d(off)
t
f
Switching Energy
90%
90%
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
I
D
D.U.T.
V
DS
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT60DS30
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAX
TM
(B2) Package Outline
TO-264 (L) Package Outline
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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