050-7163 Rev A 1-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
D
3
PAK
APT30M61BFLL
APT30M61SFLL
300V 54A 0.061
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D
3
PAK Package
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 27A)
Zero Gate Voltage Drain Current (V
DS
= 300V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 240V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
300
0.061
250
1000
100
3
5
APT30M61BFLL-SFLL
300
54
216
30
40
403
3.23
-55 to 150
300
54
30
1300
DYNAMIC CHARACTERISTICS
APT30M61BFLL - SFLL
050-7163 Rev A 1-2004
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -54A)
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -54A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -54A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -54A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
54
216
1.3
8
T
j
= 25C
225
T
j
= 125C
400
T
j
= 25C
1.0
T
j
= 125C
4.2
T
j
= 25C
10
T
j
= 125C
20
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.31
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 0.89mH, R
G
=
25
, Peak I
L
= 54A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
I
D
54A
di
/
dt
700A/s
V
R
300
T
J
150
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 150V
I
D
= 54A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
150V
I
D
=
54A
@ 25C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25C
V
DD
=
200V, V
GS
= 15V
I
D
=
54A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
200V V
GS
= 15V
I
D
=
54A, R
G
=
5
MIN
TYP
MAX
3720
920
41
64
23
26
12
20
36
13
367
319
451
348
UNIT
pF
nC
ns
J
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7163 Rev A 1-2004
Typical Performance Curves
APT30M61BFLL - SFLL
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
B
V
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
15V
6V
7V
8V
9V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
NORMALIZED TO
V
GS
= 10V @ 27A
0.119
0.191
0.0135F
0.319F
Power
(watts)
RC MODEL
Junction
temp. (
C)
Case temperature. (
C)
10V
0
5
10
15
20
25
30
0
2
4
6
8
10
0
20
40
60
80
100
120
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
I
D = 27A
V
GS = 10V
160
140
120
100
80
60
40
20
0
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
180
160
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.20
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
050-7163 Rev A 1-2004
APT30M61BFLL - SFLL
Typical Performance Curves
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT
(AMPERES)
C, CAPACITANCE (pF)
1
5
10
50 100
300
0
10
20
30
40
50
0 10 20 30 40
50 60 70 80 90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
216
100
10
1
16
14
12
10
8
6
4
2
0
10,000
5,000
1,000
100
10
200
100
50
10
5
1
TJ =+150C
TJ =+25C
Coss
Ciss
Crss
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100S
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 200V
R
G = 5
T
J = 125C
L = 100H
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
0
5
10 15 20 25 30 35 40 45 50
V
DD
= 200V
I
D
= 54A
T
J
= 125C
L = 100H
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
V
DD = 200V
R
G = 5
T
J = 125C
L = 100H
V
DD = 200V
R
G = 5
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
90
80
70
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
VDS = 150V
VDS = 60V
VDS = 240V
I
D = 54
050-7163 Rev A 1-2004
Typical Performance Curves
APT30M61BFLL - SFLL
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
D
3
PAK Package Outline
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
T
J
= 125 C
Drain Current
Drain Voltage
Gate Voltage
90%
90%
t
d(off)
0
10%
Switching Energy
t
f
Switching Energy
Gate Voltage
Drain Current
Drain Voltage
5 %
90 %
10 %
5 %
t
r
t
d(on)
10 %
T
J
= 125 C
I
C
D.U.T.
APT30DS30
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
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