050-7143 Rev D 6-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Super Junction MOSFET
C
Power Semiconductors
O
O L
MOS
Ultra low R
DS
(
ON
)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
N-Channel Enhancement Mode
Popular SOT-227 Package
APT31N80JC3
800V 31A 0.145
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
G
D
S
"COOLMOS
TM
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 500A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 22A)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
J
= 150C)
Gate-Source Leakage Current (V
GS
= 20V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
dv
/
dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS
= 640V, I
D
= 31A, T
J
= 125C)
Repetitive Avalanche Current
7
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
APT31N80JC3
800
31
93
20
30
833
6.67
-55 to 150
300
50
17
0.5
670
MIN
TYP
MAX
800
0.125
0.145
0.5
25
250
200
2.10
3
3.9
DYNAMIC CHARACTERISTICS
APT31N80JC3
050-7143 Rev D 6-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 115.92mH, R
G
=
25
, Peak I
L
= 3.4A
5
I
S
=
-
31A
di
/
dt
=
100A/s
V
R
= 480V
T
J
=
125
C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as P
AV
=E
AR
*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
31
93
1
1.2
855
30
6
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.37
62
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 400V
I
D
= 31A
@ 25C
RESISTIVE SWITCHING
V
GS
=
10V
V
DD
=
400V
I
D
=
31A
@ 125C
R
G
=
2.5
INDUCTIVE SWITCHING @ 25C
V
DD
=
533V, V
GS
= 15V
I
D
=
31A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
533V, V
GS
= 15V
I
D
=
31A, R
G
=
5
MIN
TYP
MAX
4510
2050
110
180
355
22
90
25
15
70
80
6
9
615
530
1025
580
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -
31A
)
Reverse Recovery Time (I
S
= -
31A
, dl
S
/dt = 100A/s, V
R
= 400V)
Reverse Recovery Charge (I
S
= -
31A
, dl
S
/dt = 100A/s, V
R
= 400V)
Peak Diode Recovery
dv
/
dt
5
050-7143 Rev D 6-2004
APT31N80JC3
Typical Performance Curves
4.5V
5V
5.5V
4V
VGS =15 & 10V
6V
6.5V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
25
50
75
100
125
150
-50
0
50
100
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
90
80
70
60
50
40
30
20
10
0
35
30
25
20
15
10
5
0
3.0
2.5
2.0
1.5
1.0
0.5
0
I
D = 17A
V
GS = 10V
VGS=10V
VGS=20V
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS
= 10V @ 17A
0.144
0.226
0.00671F
0.141F
Power
(watts)
RC MODEL
Junction
temp. (
C)
Case temperature. (
C)
APT31N80JC3
050-7143 Rev D 6-2004
Typical Performance Curves
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
1
10
100
800
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
93
50
10
5
1
.1
16
12
8
4
0
TC =+25C
TJ =+150C
SINGLE PULSE
10mS
1mS
100S
TJ =+150C
TJ =+25C
VDS= 400V
VDS= 160V
VDS= 640V
I
D = 31A
20,000
10,000
1000
100
10
200
100
10
1
OPERATION HERE
LIMITED BY RDS (ON)
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 533V
R
G = 5
T
J = 125C
L = 100H
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
5
10 15 20 25 30 35 40 45 50
V
DD = 533V
I
D = 31A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
180
160
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
V
DD = 533V
R
G = 5
T
J = 125C
L = 100H
V
DD = 533V
R
G = 5
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
050-7143 Rev D 6-2004
APT31N80JC3
Typical Performance Curves
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
T
J
= 125 C
90%
Drain Voltage
Gate Voltage
Drain Current
0
90%
t
d(off)
10%
tf
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
I
C
D.U.T.
APT15DF100
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
TJ = 125 C
Drain Voltage
Gate Voltage
Drain Current
10 %
t
d(on)
10 %
5 %
5 %
90%
t
r
Switching Energy
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