APT33GF120BR
052-6206 Rev D 3-2003
MAXIMUM RATINGS (IGBT)
All Ratings: T
C
= 25C unless otherwise specified.
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
Ultra Low Leakage Current
Low Tail Current
RBSOA and SCSOA Rated
High Freq. Switching to 20KHz
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.2
3.3
3.9
0.5
5.0
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125C)
Gate-Emitter Leakage Current (V
GE
= 20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT33GF120BR
1200
1200
20
52
33
104
66
65
297
-55 to 150
300
APT33GF120BR
1200V
52A
TO-247
G
C
E
G
C
E
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate Emitter Voltage
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 105C
Pulsed Collector Current
1
@ T
C
= 25C
RBSOA Clamped Inductive Load Current @ R
G
= 11
T
C
= 125 C
Single Pule Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
m
J
Watts
C
Fast IGBT
APT33GF120BR
052-6206 Rev D 3-2003
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS (IGBT)
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
=10
Inductive Switching (150C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +150C
Inductive Switching (25C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25C
V
CE
= 20V, I
C
= 25A
MIN
TYP
MAX
1855
230
110
170
19
100
24
85
170
125
25
60
210
74
2.8
2.8
5.6
27
65
190
70
5.2
8.5
20
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
V
CC
= 50V,
R
GE
= 25
,
L = 120H, T
j
= 25C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
C/W
oz
gm
MIN
TYP
MAX
0.42
40
0.22
5.90
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Symbol
R
JC
R
JA
W
T
APT33GF120BR
052-6206 Rev D 3-2003
C, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
T
C
=+25C
T
J
=+150C
SINGLE PULSE
250Sec. Pulse Test
VGE = 15V
IC = IC2
TJ = +25C
f = 1MHz
8V
C
ies
C
res
10V
9V
7V
C
oes
V
GE
=17, 15 & 13V
T
C
=-55C
T
C
=+150C
OPERATION
LIMITED
BY
VCE (SAT)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25C)
Figure 2, Typical Output Characteristics (T
J
= 150C)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
Figure 4, Maximum Forward Safe Operating Area
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
V
CE
=240V
60
40
20
0
80
60
40
20
0
3,000
1,000
100
10
T
C
=+25C
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.01
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
0.1
0.02
0.5
0.1
0.05
0.01
0.005
0.001
0
4
8
12
16
20
0
4
8
12
16
20
0
2
4
6
8
1
10
100
1200
.01
0.1
1.0
10
50
0
50
100
150
200
250
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
60
40
20
0
100
10
1
20
16
12
8
4
0
V
CE
=960V
V
CE
=600V
11V
12V
8V
10V
9V
7V
V
GE
=17, 15 & 13V
11V
12V
100s
1ms
10ms
APT33GF120BR
052-6206 Rev D 3-2003
VCC = 0.66 VCES
VGE = +15V
TJ = +25C
IC = IC2
VCC = 0.66 VCES
VGE = +15V
TJ = +125C
RG = 10
VCC = 0.66 VCES
VGE = +15V
RG = 10
I
C1
0.5 I
C2
I
C2
I
C1
E
on
E
off
E
on
E
off
0.5 I
C2
I
C2
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
T
J
, JUNCTION TEMPERATURE (C)
R
G
, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
T
J
, JUNCTION TEMPERATURE (C)
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75 100 125 150
0
10
20
30
40
0.1
1.0
10
100
1000
60
40
20
0
16
12
8
4
0
4
3
2
1
0
For Both:
Duty Cycle = 50%
TJ = +125C
Tsink = +90C
Gate drive as specified
Power dissapation = 83W
ILOAD = IRMS of fundamental
I
C
, COLLECTOR CURRENT (AMPERES)
TOTAL SWITCHING ENERGY LOSSES (mJ)
B
V
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
(SAT), COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION VOLTAGE (VOLTS)
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES (mJ)
I
C
, COLLECTOR CURRENT (AMPERES)
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
20
1
0.1
100
10
1
APT33GF120BR
052-6206 Rev D 3-2003
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
ts
= E
on
+ E
off
V
CE
(on)
t
d
(off)
t
d
(on)
t
f
t
r
1
Figure 15, Switching Loss Test Circuit and Waveforms
Figure 16, Resistive Switching Time Test Circuit and Waveforms
2
V
CC
R
G
R
L
=
.5 V
CES
I
C2
10%
90%
V
GE
(on)
V
CE
(off)
V
GE
(off)
2
1
From
Gate Drive
Circuitry
D.U.T.
B
I
C
I
C
90%
10%
90%
10%
10%
90%
E
off
t
f
t
d
(off)
t
d
(on)
t
r
E
on
I
C
V
CLAMP
100uH
V
CHARGE
A
A
B
D.U.T.
DRIVER*
V
C
A
R
G
V
C
V
C
D.U.T.
V
CE
(SAT)
t=2us
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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