050-7403 Rev D 2-2004
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 400V, 41A
Low Gate Charge
200 kHz operation @ 400V, 26A
Ultrafast Tail Current shutoff
SSOA rated
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
250
2500
100
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
A
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT40GP60B_S
600
20
30
100
62
160
160A @ 600V
543
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
@ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 150C
Switching Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
G
C
E
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
POWER MOS 7
IGBT
APT40GP60B
APT40GP60S
600V
TO-247
G
C
E
D
3
PAK
G
C
E
050-7403 Rev D 2-2004
APT40GP60B_S
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
T
J
= 150C, R
G
= 5
,
V
GE
=
15V, L = 100H,V
CE
= 600V
Inductive Switching (25C)
V
CC
(Peak)
= 400V
V
GE
= 15V
I
C
= 40A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
(Peak)
= 400V
V
GE
= 15V
I
C
= 40A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching SOA
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN
TYP
MAX
4610
395
25
7.5
135
30
40
160
20
29
64
45
385
644
352
450
20
29
89
69
385
972
615
950
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN
TYP
MAX
.23
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7403 Rev D 2-2004
TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TYPICAL PERFORMANCE CURVES
T
C
=-55C
T
C
=125C
T
C
=25C
V
CE
=480V
V
CE
=300V
V
CE
=120V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 40A
TJ = 25C
TJ = 25C
TJ = -55C
TJ = 125C
T
C
=-55C
T
C
=25C
T
C
=125C
250s PULSE TEST
<0.5 % DUTY CYCLE
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
APT40GP60B_S
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
180
160
140
120
100
80
60
40
20
0
I
C
=
80A
I
C
=
40A
I
C
=
20A
I
C
=
20A
I
C
=
40A
I
C
=
80A
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
80
70
60
50
40
30
20
10
0
250
200
150
100
50
0
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
050-7403 Rev D 2-2004
APT40GP60B_S
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=
25C, V
GE
=
10V
or 15V
V
CE
= 400V
R
G
= 5
L = 100 H
V
GE
=
15V,T
J
=125C
V
GE
= 15V
V
GE
= 10V
V
GE
=10V,T
J
=125C
V
GE
=
10V,T
J
=25C
V
GE
=
15V,T
J
=25C
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=
25C, V
GE
=
10V
or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=
5
, L
=
100
H, V
CE
=
400V
R
G
=
5
, L
=
100
H, V
CE
=
400V
SWITCHING ENERGY LOSSES (J)
E
ON1
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
0
20
40
60
80
100
0
20
40
60
80
100
0
20
40
60
80
100
0
20
40
60
80
100
0
20
40
60
80
100
0
20
40
60
80
100
0
10
20
30
40
50
0
25
50
75
100
125
40
35
30
25
20
15
10
5
0
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
100
80
60
40
20
0
100
80
60
40
20
0
2000
1500
1000
500
0
3000
2500
2000
1500
1000
500
0
VCE = 400V
VGE = +15V
RG = 5
VCE = 400V
VGE = +15V
RG = 5
VCE = 400V
VGE = +15V
RG = 5
T
J
=125C, 15V
T
J
= 25C, 15V
T
J
=125C,10V
T
J
= 25C, 10V
E
on2
20A
E
off
40A
E
on2
40A
E
on2
80A
E
off
80A
E
off
20A
E
on2
20A
E
off
40A
E
on2
40A
E
on2
80A
E
off
80A
E
off
20A
T
J
=
25 or 125C,V
GE
=
15V
T
J
=
25 or 125C,V
GE
=
10V
V
CE
= 400V
T
J
= 25C, T
J
=125C
R
G
= 5
L = 100 H
V
CE
=
400V
T
J
=
125C
V
GE
=
+15V
050-7403 Rev D 2-2004
10,000
5,000
1,000
500
100
50
10
0
180
160
140
120
100
80
60
40
20
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
TYPICAL PERFORMANCE CURVES
260
100
50
10
20
30
40
50
60
70
80
TJ = 125
C
TC = 75
C
D = 50 %
VCE = 400V
RG = 5
Cres
Cies
Coes
max
max1
max 2
max1
d(on)
r
d(off )
f
diss
cond
max 2
on 2
off
J
C
diss
JC
F
min(f
,f
)
0.05
f
t
t
t
t
P
P
f
E
E
T
T
P
R
=
=
+ +
+
-
=
+
-
=
APT40GP60B_S
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
0.0106
0.0868
0.133
0.00663F
0.0106F
0.262F
Power
(Watts)
Junction
temp. ( "C)
RC MODEL
Case temperature
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
050-7403 Rev D 2-2004
APT40GP60B_S
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24,
E
ON1
Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
90%
t
d(off)
t
f
90%
10%
Collector Current
Collector Voltage
Gate Voltage
0
Switching Energy
T
J
= 125 C
I
C
A
D.U.T.
APT30DF60
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
10%
t
r
10%
90%
5%
t
d(on)
5 %
T
J
= 125 C
Switching Energy
Collector Voltage
Collector Current
Gate Voltage
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Collector (Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
D
3
PAK Package Outline
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