G
K
D
S
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
050-5558 Rev A
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/
C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
500
44
0.100
25
250
100
2
4
APT5010JVRU2
500
44
176
30
40
450
3.6
-55 to 150
300
44
50
2500
APT5010JVRU2
500V
44A
0.100
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
100% Avalanche Tested
Lower Leakage
Popular SOT-227 Package
Single Die MOSFET & FRED
PFC "Boost" Configuration
POWER MOS V
SOT-227
G
S
K
D
ISOTOP
"UL Recognized"
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
C
R
G
= 0.6
MIN
TYP
MAX
7410
1050
390
312
37
127
18
16
54
5
UNIT
pF
nC
ns
APT5010JVRU2
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5558 Rev A
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
44
176
1.3
620
14.7
Z
JC
, THERMAL IMPEDANCE (
C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
temperature.
4
Starting T
j
=
+25
C, L = 2.58mH, R
G
=
25
, Peak I
L
= 44A
2
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL / PACKAGE CHARACTERISTICS
Symbol
R
JC
R
JA
V
Isolation
Torque
MIN
TYP
MAX
0.28
40
2500
13
UNIT
C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
C)
T
C
, CASE TEMPERATURE (
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
APT5010JVRU2
050-5558 Rev A
0
50
100
150
200
250
0
2
4
6
8
10
12
0
2
4
6
8
0
20
40
60
80
100
120
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
100
80
60
40
20
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
80
60
40
20
0
100
80
60
40
20
0
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
6V
5.5V
5V
4.5V
4V
VGS=7V, 8V, 10V & 15V
6V
5.5V
5V
4.5V
4V
VGS=15V
VGS=10V
VGS=20V
TJ = +25
C
TJ = -55
C
TJ = +125
C
TJ = +125
C
TJ = +25
C
TJ = -55
C
VGS=7V, 8V & 10V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
APT5010JVRU2
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 80
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
C, 8.3mS)
Operating and StorageTemperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
T
J
,T
STG
T
L
Symbol
V
F
I
RM
C
T
Characteristic / Test Conditions
I
F
= 30A
Maximum Forward Voltage
I
F
= 60A
I
F
= 30A, T
J
= 150
C
Maximum Reverse Leakage Current
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125
C
Junction Capacitance, V
R
= 200V
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
C
UNIT
Volts
A
pF
MIN
TYP
MAX
1.8
1.5
1.6
250
500
40
APT5010JVRU2
600
30
60
320
-55 to 150
300
MAXIMUM RATINGS (UltraFast Recovery Diode)
All Ratings: T
C
= 25
C unless otherwise specified.
050-5558 Rev A
Diode Specifications Section
TC =+25
C
TJ =+150
C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150
C
TJ =+25
C
Crss
1
5
10
50 100
500
.01
.1
1
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
10
S
1mS
10mS
100mS
DC
100
S
Z
JC
, THERMAL IMPEDANCE (
C/W)
2.0
1.0
0.5
0.1
0.05
0.01
0.005
MIN
TYP
MAX
50
65
50
80
155
155
4
10
7.5
15
100
300
5
5
400
200
UNIT
nS
Amps
nC
Volts
A/
S
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/
S, V
R
= 30V,
T
J
= 25
C
Reverse Recovery Time
T
J
= 25
C
I
F
= 30A, di
F
/dt
= -240A/
S, V
R
= 350V
T
J
= 100
C
Forward Recovery Time
T
J
= 25
C
I
F
= 30A, di
F
/dt
= 240A/
S, V
R
= 350V
T
J
= 100
C
Reverse Recovery Current
T
J
= 25
C
I
F
= 30A, di
F
/dt
= -240A/
S, V
R
= 350V
T
J
= 100
C
Recovery Charge
T
J
= 25
C
I
F
= 30A, di
F
/dt
= -240A/
S, V
R
= 350V
T
J
= 100
C
Forward Recovery Voltage
T
J
= 25
C
I
F
= 30A, di
F
/dt
= 240A/
S, V
R
= 350V
T
J
= 100
C
Rate of Fall of Recovery Current
T
J
= 25
C
I
F
= 30A, di
F
/dt
= -240A /
S, V
R
= 350V (See Figure 10)
T
J
= 100
C
DYNAMIC CHARACTERISTICS
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Symbol
R
JC
R
JA
W
T
MIN
TYP
MAX
0.90
20
1.06
30
UNIT
C/W
oz.
gm.
APT5010JVRU2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
050-5558 Rev A
0
0.5
1.0
1.5
2.0
2.5
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
0.01
0.05
0.1
0.5
1
5
10
50
100
200
TJ = 100
C
VR = 350V
TJ = 100
C
VR = 350V
TJ = 100
C
VR = 350V
t
rr
Q
rr
Q
rr
t
rr
I
RRM
100
80
60
40
20
0
40
30
20
10
0
200
160
120
80
40
0
800
500
100
50
30
60A
30A
15A
30A
15A
60A
APT5010JVRU2
T
J
= -55
C
T
J
= 25
C
T
J
= 100
C
T
J
= 150
C
15A
30A
60A
TJ = 100
C
VR = 350V
IF = 30A
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2500
2000
1500
1000
500
0
25
20
15
10
5
0
V
fr
t
fr
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
Figure 15, Forward Voltage Drop vs Forward Current
Figure 16, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 17, Reverse Recovery Current vs Current Slew Rate
Figure 18, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
Figure 19, Reverse Recovery Time vs Current Slew Rate
Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 21, Junction Capacitance vs Reverse Voltage
C
J
, JUNCTION CAPACITANCE
t
rr
, REVERSE RECOVERY TIME
I
RRM
, REVERSE RECOVERY CURRENT
I
F
, FORWARD CURRENT
(pico-FARADS)
(nano-SECONDS)
(AMPERES)
(AMPERES)
t
fr
, FORWARD RECOVERY TIME
K
f
, DYNAMIC PARAMETERS
Q
rr
, REVERSE RECOVERY CHARGE
(nano-SECONDS)
(NORMALIZED)
(nano-COULOMBS)
V
fr
, FORWARD RECOVERY VOLTAGE
(VOLTS)
050-5558 Rev A
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F
/dt Adjust
30
H
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of I
F
Qrr - Area Under the Curve Defined by I
RRM
and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
6
Figure 22, Diode Reverse Recovery Test Circuit and Waveforms
Figure 23, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2
(
trr . I
RRM
)
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Cathode Drain
Gate
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Source
Changed 2/10/99
APT5010JVRU2
SOT-227 (ISOTOP
) Package Outline
050-5558 Rev A
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
ISOTOP
is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
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