Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 20.5A)
Zero Gate Voltage Drain Current (V
DS
= 550V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 440V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
050-7193 Rev A 3-2003
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
550
41
0.130
250
1000
100
3
5
APT5513
550
41
164
30
40
500
4.0
-55 to 150
300
41
35
1600
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
T-MAXTM
G
D
S
TO-264
B2FLL
LFLL
APT5513B2FLL
APT5513LFLL
550V 41A 0.130
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular
T-MAXTM
or TO-264 Package
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
050-7193 Rev A 3-2003
DYNAMIC CHARACTERISTICS
APT5513B2FLL - LFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -41A)
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -41A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -41A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -41A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
41
164
1.3
15
T
j
= 25C
250
T
j
= 125C
500
T
j
= 25C
2.16
T
j
= 125C
5.57
T
j
= 25C
15.5
T
j
= 125C
22.4
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.25
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 1.90mH, R
G
=
25
, Peak I
L
= 41A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
I
D
41A
di
/
dt
700A/s
V
R
V
DSS
T
J
150
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 275V
I
D
= 41A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
275V
I
D
=
41A
@ 25C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25C
V
DD
=
367V, V
GS
= 15V
I
D
=
41A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
367V V
GS
= 15V
I
D
=
41A, R
G
=
5
MIN
TYP
MAX
4268
838
60
98
25
55
14
11
30
5
517
431
796
501
UNIT
pF
nC
ns
J
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7193 Rev A 3-2003
APT5513B2FLL - LFLL
Typical Performance Curves
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
5.5V
6V
6.5V
7V
5V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
7.5V
0
5
10
15
20
25
30
0
2
4
6
8
10
0
20
40
60
80
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
NORMALIZED TO
V
GS
= 10V @ 20.5A
120
100
80
60
40
20
0
45
40
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
I
D = 20.5A
V
GS = 10V
0.0526
0.107
0.0898
0.000456F
0.0121F
0.338F
Power
(Watts)
Junction
temp. ( "C)
RC MODEL
Case temperature
050-7193 Rev A 3-2003
APT5513B2FLL - LFLL
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
1
10
100
550
0
10
20
30
40
50
0
40
80
120
160
0.3
0.5
0.7
0.9
1.1
1.3
1.5
165
100
10
1
16
12
8
4
0
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
5
15
25
35
45
55
65
5
15
25
35
45
55
65
5
15
25
35
45
55
65
0
5
10 15 20 25 30
35 40 45 50
100
80
60
40
20
0
1600
1200
800
400
0
Crss
Ciss
Coss
TC =+25C
TJ =+150C
SINGLE PULSE
10mS
1mS
100S
TJ =+150C
TJ =+25C
VDS=275V
VDS=110V
VDS=440V
I
D = 41A
V
DD = 367V
R
G = 5
T
J = 125C
L = 100H
t
r
t
f
t
d(on)
t
d(off)
V
DD = 367V
R
G = 5
T
J = 125C
L = 100H
E
on
E
off
E
on
E
off
V
DD = 367V
R
G = 5
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
1,000
100
10
200
100
10
1
80
60
40
20
0
2500
2000
1500
1000
500
0
V
DD = 367V
I
D = 41A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
050-7193 Rev A 3-2003
APT5513B2FLL - LFLL
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAX
TM
(B2) Package Outline
TO-264 (L) Package Outline
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
D.U.T.
APT30DF60B
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
T
J
= 125 C
Gate Voltage
Drain Voltage
Drain Current
90%
t
d(off)
10%
0
tf
90%
Switching Energy
10 %
t
d(on)
90%
10 %
5 %
5 %
t
r
Switching Energy
TJ = 125 C
Drain Current
Gate Voltage
Drain Voltage
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