APTGT100SK170D1
A
P
T
G
T
1
0
0
S
K
1
7
0
D
1
R
e
v
0
J
a
n
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1700
V
T
C
= 25C
200
I
C
Continuous Collector Current
T
C
= 80C
100
I
CM
Pulsed Collector Current
T
C
= 25C
300
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
695
W
RBSOA Reverse Bias Safe Operation Area
T
j
= 125C
200A@1650V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
2
1
5
Q1
3
4
6
7
5
4
3
2
1
V
CES
= 1700V
I
C
= 100A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
-
M5 power connectors
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Buck chopper
Trench IGBT
Power Module
APTGT100SK170D1
A
P
T
G
T
1
0
0
S
K
1
7
0
D
1
R
e
v
0
J
a
n
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 4mA
1700
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1700V
3
mA
T
j
= 25C
2.0
2.4
V
CE(on)
Collector Emitter on Voltage
V
GE
= 15V
I
C
= 100A
T
j
= 125C
2.4
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 4 mA
5.2
5.8
6.4
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
ies
Input Capacitance
8.5
C
res
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz
0.3
nF
T
d(on)
Turn-on Delay Time
250
T
r
Rise Time
100
T
d(off)
Turn-off Delay Time
850
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 100A
R
G
= 15
120
ns
T
d(on)
Turn-on Delay Time
300
T
r
Rise Time
100
T
d(off)
Turn-off Delay Time
1000
T
f
Fall Time
200
ns
E
off
Turn Off Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 100A
R
G
= 15
32
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
T
j
= 25C
1.8
2.2
V
F
Diode Forward Voltage
I
F
= 100A
V
GE
= 0V
T
j
= 125C
1.9
V
T
j
= 25C
12
E
r
Reverse Recovery Energy
I
F
= 100A
V
R
= 900V
di/dt =900A/s T
j
= 125C
25
mJ
T
j
= 25C
25
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 900V
di/dt =900A/s T
j
= 125C
43
C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.18
R
thJC
Junction to Case
Diode
0.3
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
3500
V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
125
C
For terminals
M5
2
3.5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
180
g
APTGT100SK170D1
A
P
T
G
T
1
0
0
S
K
1
7
0
D
1
R
e
v
0
J
a
n
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
3 - 3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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