FEATURES
Operates from 2V, 3V, 5V to 10V
Flexible basic circuit building block and design element
Very high resolution -- average programmable voltage
resolution of 0.1mV
Wide dynamic range -- current levels from 0.1
A
to 3000
A
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Proven, non-volatile CMOS technology
Typical 10 years drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 10
12
Very high DC current gain -- greater than 10
9
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68
A
Tight matching and tracking of on-resistance
between different devices with programming
Very low input currents and leakage currents
Low cost, monolithic technology
Application-specific or in-system programming modes
User programmable software-controlled automation
User programmability of any standard/custom
configuration
Micropower operation
Available in standard PDIP, SOIC and hermetic
CDIP packages
Suitable for matched-pair balanced circuit configuration
Suitable for both coarse and fine trimming applications
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPADTM)
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD1108E/ALD1110E
BENEFITS
Simple, elegant single-chip solution
to trimming voltage/current values
Direct in-circuit active element operation
and programming
Remotely and electrically trim parameters on
circuits that are physically inaccessible
Usable in environmentally sealed circuits
No system overhead or active circuitry required
No mechanical moving parts -- high G-shock
tolerance
Improved reliability, dependability, dust and
moisture resistance
Cost and labor savings
Small footprint for high board density
applications
Fully automated test and trimming environment
Operating Temperature Range*
-55
C to +125
C
0
C to +70
C
0
C to +70
C
8-Pin
8-Pin
8-Pin
CERDIP
Plastic Dip
SOIC
Package
Package
Package
ALD1110E DA
ALD1110E PA
ALD1110E SA
Operating Temperature Range*
-55
C to +125
C
0
C to +70
C
0
C to +70
C
16-Pin
16-Pin
16-Pin
CERDIP
Plastic Dip
SOIC
Package
Package
Package
ALD1108E DC
ALD1108E PC
ALD1108E SC
ORDERING INFORMATION
PIN CONFIGURATION
PIN CONFIGURATION
* Contact factory for industrial temperature range
P
N2
1
2
3
14
15
16
4
13
V+
5
12
S
34
P
N3
6
7
8
10
11
G
N1
D
N1
P
N1
S
12
V-
G
N4
P
N4
D
N4
9
G
N3
D
N3
D
N2
G
N2
DC, PC, SC PACKAGE
v-
v+
ALD1108E
EPAD 1
EPAD 2
EPAD 4
EPAD 3
P
N2
1
2
3
6
7
8
4
5
V+
G
N1
D
N1
P
N1
S
12
, V-
D
N2
G
N2
DA, PA, SA PACKAGE
v+
ALD1110E
EPAD 1
EPAD 2
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ALD1108E/ALD1110E
Advanced Linear Devices
2
GENERAL DESCRIPTION
ALD1108E/ALD1110E are monolithic quad/dual EPADs (Electrically
Programmable Analog Device) that utilize CMOS MOSFET with elec-
trically programmable threshold voltage. For a given input voltage,
changing the threshold turn-on voltage of a MOSFET device precisely
changes its drain on-current, resulting in an on-resistance characteris-
tic that can be precisely set and controlled. Used as an in-circuit element
for trimming or setting a combination of voltage and/or current charac-
teristics, it can be programmed via a Personal Computer remotely and
automatically via software control. Once programmed and set, the set
voltage and current levels are stored indefinitely inside the device as a
precisely controlled nonvolatile stored charge, which is not affected
during normal operation of the device, even after power has been turned
off.
The ALD1108E/ALD1110E are devices built with ALD's EPAD technol-
ogy, an electrically programmable device technology refined for analog
applications. The ALD1108E/ALD1110E functions like a regular MOSFET
transistor except with precise user preset threshold voltage. Using the
ALD1108E/ALD1110E is simple and straight forward. The device is
extremely versatile as a circuit element and design component. It
presents the user with a wealth of possible applications, limited only by
the imagination of the user and the many ways an analog MOSFET
device can be used as a circuit design element. The ALD1108E/
ALD1110E do not need other active circuitry for functionality.
The basic device is a monotonically adjustable device which means the
device can normally be programmed to increase in threshold voltage
and to decrease in drain-on current as a function of a given input bias
voltage. Once adjusted, the voltage and current conditions are perma-
nent and not reversible. However, a given EPAD device can be adjusted
many times to continually increase the threshold voltage. A pair of EPAD
devices can also be connected such that one device is used to adjust a
parameter in one direction and the other device is used to adjust the
same parameter in the other direction.
The ALD1108E/ALD1110E can be pre-programmed with the ALD
EPAD programmer to obtain the desired voltage and current levels. Or,
they can be programmed as an active in-system element in a user
system, via user designed interface circuitry. For more information, see
Application Note AN1108.
APPLICATIONS
Precision PC-based electronic calibration
Automated voltage trimming or setting
Remote voltage or current adjustment of
inaccessible nodes
PCMCIA based instrumentation trimming
Electrically adjusted resistive load
Temperature compensated current sources
and current mirrors
Electrically trimmed/calibrated current
sources
Permanent precision preset voltage level
shifter
Low temperature coefficient voltage and/or
current bias circuits
Multiple preset voltage bias circuits
Multiple channel resistor pull-up or pull-down
circuits
Microprocessor based process control systems
Portable data acquisition systems
Battery operated terminals and instruments
Remote telemetry systems
Programmable gain amplifiers
Low level signal conditioning
Sensor and transducer bias currents
Neural networks
BLOCK DIAGRAM
P
N1
(1)
D
N1
(3)
G
N1
(2)
D
N2
(6)
P
N2
(8)
G
N2
(7)
V- (4)
V+(5)
S
12
(4)
ALD1110E
EPAD 1
EPAD 2
~
~
BLOCK DIAGRAM
EPAD 1
EPAD 2
EPAD 3
EPAD 4
P
N4
(8)
P
N
(1)
D
N1
(3)
G
N1
(2)
D
N2
(14)
P
N2
(16)
G
N2
(15)
P
N3
(9)
D
N3
(11)
G
N3
(10)
D
N4
(6)
G
N4
(7)
V- (5)
V+(13)
S
12
(4)
S
34
(12)
ALD1108E
~
~
ALD1108E/ALD1110E
Advanced Linear Devices
3
Supply Voltage
V+
1.2
10.0
1.2
10.0
V
Initial Threshold Voltage
V
t i
0.990
1.000
1.010
0.990
1.000
1.010
V
I
DS
= 1
A T
A
= 21
C
Programmable Vt Range
V
t
1.000
3.000
1.000
3.000
V
Drain - Gate Connected
TCV
DS
-1.6
-1.6
mV/
C
I
D
= 5
A
Voltage Tempco
-0.3
-0.3
mV/
C
I
D
= 50
A
0.0
0.0
mV/
C
I
D
= 68
A
+2.7
+2.7
mV/
C
I
D
= 500
A
Initial Offset
Voltage
V
OS i
1
5
1
5
mV
Tempco of V
OS
TCV
OS
5
5
V/
C
V
DS1
= V
DS2
Differential Threshold Voltage
DV
t
2.000
2.000
V
Tempco of Differential
Threshold Voltage
TCDV
t
0.033
0.033
mV/
C
Long Term Drift
V
t
/
t
-0.02
-0.05
-0.02
-0.05
mV
1000 Hours
Long Term Drift Match
V
t
/
t
-5
-5
V
1000 Hours
Drain Source On Current
I
DS(ON)
3.0
3.0
mA
V
G
=V
D
= 5V V
S
= 0V
V
t
= 1.0
Drain Source On Current
I
DS(ON)
0.8
0.8
mA
V
G
=V
D =
5V V
S =
0V
V
t
= 3.0
Initial Zero Tempco Voltage
V
ZTCi
1.52
1.52
V
V
t
= 1.000V
Zero Tempco Current
I
ZTC
68
68
A
Initial On-Resistance
R
ON i
500
500
V
GS
= 5V V
DS
= 0.1V
On-Resistance Match
R
ON
0.5
0.5
%
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
+
referenced to V
-
-0.3V to +13.2V
Supply voltage, V
S
referenced to V
-
6.6V
Differential input voltage range
0.3V to V
+
+0.3V
Power dissipation
600 mW
Operating temperature range PA, SA, PC, SC package
0
C to +70
C
DA, DC package
-55
C to +125
C
Storage temperature range
-65
C to +150
C
Lead temperature, 10 seconds
+260
C
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
C V+ = +5.0V unless otherwise specified
ALD1108E
ALD1110E
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
ALD1108E/ALD1110E
Advanced Linear Devices
4
PROGRAMMING CHARACTERISTICS
T
A
= 25
C V+ = +5.0V unless otherwise specified
ALD1108E
ALD1110E
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
Programmable V
t
Range
V
t
1.000
3.000
1.000
3.000
V
Resolution of V
t
Programming
RV
t
0.1
1
0.1
1
mV
Change in V
t
Per
V
t
/ N
0.5
0.5
mV/ pulse
V
t
= 1.0V
Programming Pulse
0.05
0.05
V
t
= 2.5V
Programming Voltage
Vp
11.75
12.00
12.25
11.75
12.00
12.25
V
Programming Current
Ip
2
2
mA
Pulse Frequency
pulse
50
50
KH
Z
Transconductance
gm
1.4
1.4
mA/V
V
D
= 10V,V
G
=V
t
+ 4.0
Transconductance Match
gm
25
25
A/V
V
D
= 10V,V
G
=V
t
+ 4.0
Low Level Output
Conductance
g
OL
6
6
A/V
V
G
= V
t
+0.5V
High Level Output
Conductance
g
OH
68
68
A/V
V
G
= V
t
+4.0V
Drain Off Leakage Current
I
D(OFF)
5
400
5
400
pA
4
4
nA
T
A
= 125
C
Gate Leakage Current
I
GSS
10
100
10
100
pA
1
1
nA
T
A
= 125
C
Input Capacitance
C
ISS
25
25
pF
Cross Talk
60
60
dB
f = 100KHz
Relaxation Time Constant
t
RLX
2
2
Hours
Relaxation Voltage
V
RLX
-0.3
-0.3
%
1.0V
V
t
3.0V
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
T
A
= 25
C V+ = +5.0V unless otherwise specified
ALD1108E
ALD1110E
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
ALD1108E/ALD1110E
Advanced Linear Devices
5
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN SOURCE ON VOLTAGE (V)
0
2
4
6
10
12
8
20
15
10
5
0
DRAIN SOURCE ON CURRENT
(mA)
T
A
= +25
C
V
GS
= +12V
V
GS
= + 2V
V
GS
= + 4V
V
GS
= + 6V
V
GS
= + 8V
V
GS
= +10V
OUTPUT CHARACTERISTICS
-200 -160 -120 -80 -40
+200
+1.0
0
0 40 80 120 160
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT
(mA)
-1.0
V
GS
= +12V
V
GS
= +6V
V
GS
= +8V
V
GS
= +10V
T
A
= +25
C
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
2.0
1.5
1.0
5.0
TRANSCONDUCTANCE
(
mA/V)
T
A
= +25
C
0
V
GS
= V
t
+ 4.0V
V
DS
= 10V
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
75
70
60
50
HIGH LEVEL OUTPUT
CONDUCTANCE (
A/V)
T
A
= +25
C
V
GS
= V
t
+ 4.0V
V
DS
= 5.0V
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
T
A
= +25
C
V
DS
= +5.0V
DRAIN SOURCE ON CURRENT
(mA)
3.0
2.0
1.0
0
V
GS
= +5V
V
GS
= +1V
V
GS
= +2V
V
GS
= +3V
V
GS
= +4V
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
6
5
4
3
2
1
0
AMBIENT TEMPERATURE (
C)
-50 -25 0 25 50 75 100 125
DRAIN SOURCE ON CURRENT
(mA)
V
G
= 5V
V
t
= 1.0V
V
t
= 1.5V
V
t
= 3.0V
V
t
= 2.0V
V
t
= 2.5V
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