Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 12/99A
2123 GHz GaAs MMIC
Medium Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 22 dBm Typical P
1 dB
Output Power
at 23 GHz
I 14 dB Typical Small Signal Gain
I 0.25 m Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA022P2-00
Description
Alpha's two-stage balanced K band GaAs MMIC power
amplifier has a typical P
1 dB
of 22 dBm with 13 dB
associated gain guaranteed across frequency range
2123 GHz. The chip uses Alpha's proven 0.25
m
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance.
Parameter
Condition
Symbol
Min.
Typ.
2
Max.
Unit
Drain Current (at Saturation)
I
DS
280
300
mA
Small Signal Gain
F = 2123 GHz
G
12
14
dB
Input Return Loss
F = 2123 GHz
RL
I
-8
-6
dB
Output Return Loss
F = 2123 GHz
RL
O
-9
-7
dB
Output Power at 1 dB Gain Compression
F = 23 GHz
P
1 dB
19
22
dBm
Saturated Output Power
F = 23 GHz
P
SAT
21
23.5
dBm
Gain at Saturation
F = 23 GHz
G
SAT
11
dB
Thermal Resistance
1
JC
69
C/W
Electrical Specifications at 25C (V
DS
= 6 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.571
3.268
1.576
3.400
0.000
1.572
1.700
0.850
0.000
RF OUT
RF IN
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
7 V
DC
Power In (P
IN
)
19 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
2123 GHz GaAs MMIC Medium Power Amplifier
AA022P2-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 12/99A
20
0
-10
-20
10
5
-5
-15
15
19
18
20
21
S
21
Typical Small Signal Performance
S-Parameters (V
DS
= 6 V I
DS
= 240 mA,
T
A
= 25C)
22
Frequency (GHz)
(dB)
23
24
25
26
S
11
S
22
Typical Performance Data
RF OUT
RF IN
6 V
.01
F
50 pF
Bias Arrangement
Detail A
RF IN
RF OUT
V
DS
V
DS
See
Detail A
Circuit Schematic
For biasing on, adjust V
DS
from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
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