Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 12/99A
3036 GHz GaAs MMIC
Power Amplifier
Features
I Single Gate and Drain Biases
I 25 dBm Typical P
1 dB
Output Power
at 31 GHz
I 11 dB Typical Small Signal Gain
I 0.25 m Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA032P1-00
Description
Alpha's two-stage reactively-matched Ka band GaAs
MMIC power amplifier has a typical P
1 dB
of 25 dBm with
10 dB associated gain and 15% power added efficiency
at 31 GHz.
The chip uses Alpha's proven
0.25
m MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. Single gate and drain bias pads cover both
stages, with the added convenience that the chip can be
wire bonded from either side for either bias. All chips are
screened for gain, output power, efficiency and S-
parameters prior to shipment for guaranteed performance.
A broad range of applications exist in both the military and
commercial areas where high power and gain are
required.
Parameter
Condition
Symbol
Min.
Typ.
2
Max.
Unit
Drain Current (at Saturation)
I
DS
400
450
mA
Small Signal Gain
F = 3031, 3436 GHz
G
8
11
dB
Input Return Loss
F = 3031, 3436 GHz
RL
I
-7
-6
dB
Output Return Loss
F = 3031, 3436 GHz
RL
O
-8
-6
dB
Output Power at 1 dB Gain Compression
F = 31 GHz
P
1 dB
24
25
dBm
Saturated Output Power
F = 31 GHz
P
SAT
25
27
dBm
Gain at Saturation
F = 31 GHz
G
SAT
8
dB
Thermal Resistance
1
JC
42
C/W
Electrical Specifications at 25C (V
DS
= 6 V, V
GS
= -1 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
1.937
1.099
0.597
1.099
0.597
0.000
2.166
0.120
1.143
1.143
2.285
1.929
2.415
0.107
2.179
0.000
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
7 V
DC
Power In (P
IN
)
22 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
3036 GHz GaAs MMIC Power Amplifier
AA032P1-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 12/99A
Typical Small Signal Performance
S-Parameters (V
DS
= 6 V)
0
5
10
15
-5
-15
-10
-20
-25
-35
-30
26 27 28 29
31 32 33
35 36 37
30
34
38
Frequency (GHz)
S-Parameter (dB)
S
21
S
22
S
11
S
12
P
OUT
(dBm)
7 8 9 10 11 12
14 15
17 18
20 21
13
P
IN
(dBm)
Typical Output Power Compression
16
19
22
16
17
18
19
20
21
22
23
24
25
26
27
28
P
OUT
28 GHz
P
OUT
31 GHz
P
OUT
35 GHz
Typical Performance Data
Bias Arrangement
Detail A
SEE
DETAIL A
RF IN
RF OUT
V
G
G
D
D
D
D
D
D
G
G
G
G
G
V
D
V
G
V
D
D
G
V
G
= -1 V
V
DS
= 6 V
.01
F 50 pF
.01
F
50 pF
RF OUT
RF IN
Circuit Schematic
The AA032P1-00 can be biased from either or both sides for both gate and
drain biases.
For biasing on, adjust V
GS
from zero to approximately -1 V. Adjust V
DS
from
zero to the desired value (4 V6 V recommended). Adjust V
GS
to achieve the
desired I
DS
(400 mA recommended). For biasing off, reverse the biasing on
procedure.
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