Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
1
Specifications subject to change without notice. 8/00A
3739 GHz GaAs MMIC
Power Amplifier
Features
s
Single Bias Supply Operation (5.5 V)
s
18 dB Typical Small Signal Gain
s
19 dBm Typical P
1 dB
Output Power
at 39 GHz
s
0.25
m Ti/Pd/Au Gates
s
100% On-Wafer RF and DC Testing
s
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA038P5-00
Description
Alpha's three-stage reactively-matched Ka band GaAs
MMIC amplifier has a typical P
1 dB
of 19 dBm with 17 dB
associated gain over the band 3739 GHz. The chip uses
Alpha's proven 0.25
m MESFET technology, and is
based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate an epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where power and gain are required.
Parameter
Condition
Symbol
Min.
Typ.
Max.
Unit
Drain Current (at Saturation)
I
DS
200
370
mA
Small Signal Gain
F = 3739 GHz
G
16
18
dB
Input Return Loss
F = 3739 GHz
RL
I
-13
-10
dB
Output Return Loss
F = 3739 GHz
RL
O
-20
-10
dB
Output Power at 1 dB Gain Compression
F = 39 GHz
P
1 dB
16
19
dBm
Saturated Output Power
F = 39 GHz
P
SAT
19
21
dBm
Gain at Saturation
F = 39 GHz
G
SAT
15
dB
Thermal Resistance
1
JC
51
C/W
Electrical Specifications at 25C (V
DS
= 5.5 V)
1. Calculated value based on measurement of discrete FET.
0.000
0.000
1.230
1.700
3.400
2.989
2.166
1.342
0.112
0.470
1.588
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
7 V
DC
Power In (P
IN
)
19 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
3739 GHz GaAs MMIC Power Amplifier
AA038P5-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 8/00A
P
IN
(dBm)
P
OUT
(dBm)
Typical Power Sweep
15.0
17.0
19.0
21.0
-4.0 -2.0
0.0
2.0
4.0
6.0
8.0 10.0 12.0
P
OUT
at 37 GHz
P
OUT
at 38 GHz
P
OUT
at 39 GHz
P
OUT
at 40 GHz
Frequency (GHz)
(dB)
Typical S-Parameters
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
S
11
(dB)
S
21
(dB)
S
12
(dB)
S
22
(dB)
Typical Performance Data
5.5 V
RF IN
RF OUT
.01
F
50 pF
.01
F
50 pF
5.5 V
Bias Arrangement
Detail A
RF IN
RF OUT
V
DS
V
DS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust V
DS
from zero to the desired value
(5.5 V recommended). For biasing off, reverse the biasing on procedure.
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