Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
1
Specifications subject to change without notice. 3/99A
GaAs IC Control FET Series
DC2.5 GHz
AF002C1-39, AF002C4-39
Part Number
1
Frequency
2
R
ON
(
))
3
3
Insertion Loss (dB)
4,5
C
OFF
(pF)
6
Isolation (db)
5
P
-1 dB
(W)
(GHz) Typ.
Max.
Series
Shunt
Typ.
Max.
Series
Shunt
Typ.
AF002C1-39
DC0.5 GHz
6.4
9.0
0.50
0.10
0.13
0.25
25
12
0.5
DC1.0 GHz
6.4
9.0
0.60
0.15
0.13
0.25
17
8
1.0
DC2.5 GHz
6.4
9.0
0.70
0.20
0.13
0.25
13
3
1.0
AF002C4-39
DC0.5 GHz
0.8
1.1
0.20
0.15
1.10
1.50
11
15
6
DC1.0 GHz
0.8
1.1
0.25
0.25
1.10
1.50
6
9
10
DC2.5 GHz
0.8
1.1
0.30
2.00
1.10
1.5
3
4
10
Electrical Specifications at 25C (0, -5 V)
0.045
(1.14 mm)
0.035
(0.89 mm)
0.004 (0.10 mm)
0.0005 (0.01 mm)
0.027 (0.69 mm) REF.
0.007 (0.18 mm)
0.003 (0.08 mm)
0.120 (3.05 mm)
0.110 (2.79 mm)
0.104 (2.64 mm)
0.083 (2.10 mm)
0.055 (1.40 mm)
0.047 (1.19 mm)
0.024 (0.61 mm)
0.018 (0.45 mm)
0.080 (2.03 mm)
0.070 (1.78 mm)
0.018 (0.45 mm)
0.015 (0.38 mm)
3
1
2
0.040 (1.02 mm)
0.037 (0.94 mm)
Features
s
Low Cost SOT-23 Package
s
Series or Shunt Configuration
s
Low DC Current Drain
s
Ideal Switch Building Blocks
s
Pin Diode Replacements
s
High Power Antenna Switches
SOT-23
Description
This group of GaAs control FETs can be used in both
series and shunt configurations. They incorporate on-chip
circuitry that eliminates the need for extra bias
components and minimizes power drain to typically 25 W.
These features make the device ideal replacements for
PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due
to package parasitics. They can be tuned out in narrow
band applications as shown in the circuit examples on the
following pages.
Parameter
Condition
Frequency
Min.
Typ.
Max.
Unit
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
6
ns
On, Off (50% CTL to 90/10% RF)
12
ns
Control Voltages
V
Low
= 0 to -0.2 V @ 20 A Max.
V
High
= -5 V @ 50 A to -9 V @ 200 A Max.
Operating Characteristics at 25C (0, -5 V)
1. All measurements made in a 50
system, unless otherwise specified.
2. DC = 300 kHz.
3. R
ON
- resistance in
in low impedance state when "0" V is applied to Gate (G).
4. Insertion loss changes by 0.003 dB/C.
5. Insertion loss and isolation typical values.
6. C
OFF
- capacitance (pF) in high impedance state when -5 V is applied to Gate (G).
GaAs IC Control FET Series DC2.5 GHz
AF002C1-39, AF002C4-39
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 3/99A
Insertion Loss vs. Frequency
Series Configuration
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
C4
C1
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
I
n
s
e
r
t
i
o
n
L
o
s
s
(
d
B
)
Isolation vs. Frequency
Series Configuration
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
I
s
o
l
a
t
i
o
n
(
d
B
)
0
5
10
15
20
25
30
35
40
45
50
C4
C1
Insertion Loss vs. Frequency
Shunt Configuration
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
I
n
s
e
r
t
i
o
n
L
o
s
s
(
d
B
)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
C1
C4
Isolation vs. Frequency
Shunt Configuration
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
I
s
o
l
a
t
i
o
n
(
d
B
)
0
5
10
15
20
25
30
C1
C4
Typical Performance Data (0, -5 V)
Characteristic
Value
RF Input Power
2 W > 500 MHz 0/-8 V
0.5 W @ 50 MHz 0/-8 V
Control Voltage
+0.2 V, -10 V
Operating Temperature
-40C to +85C
Storage Temperature
-65C to +150C
JC
25C/W
Absolute Maximum Ratings
Note: Exceeding these parameters may cause irreversible damage.
Characteristic
Value
RF Input Power
12 W > 450 MHz, 0/-12 V
Control Voltage
+0.2, -12 V
Operating Temperature
-40C to +85C
Storage Temperature
-65C to +150C
JC
25C/W
AF002C1-39
AF002C4-39
GaAs IC Control FET Series DC2.5 GHz
AF002C1-39, AF002C4-39
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
3
Specifications subject to change without notice. 3/99A
System Block Diagram
Mobile
Antenna
Phone
Antenna
Diplexer
LNA
PA
T/R Switch
Disconnect
Changeover
Switch
From Transmitter
To Receiver
T/R Switch
T/R and Antenna Changeover Switch for Mobile Cellular Systems
D
S
G
L
T
(nH)
10 k
C (pF)
Antenna
G
D
S
T
X
V
CTL
R
X
/4
GaAs FET
AF002C
Series
GaAs FET
AF002C
Series
V
CTL
(V)
T
X
to Antenna
R
X
to Antenna
0
Low Loss
High Isolation
-5
High Isolation
Low Loss
Truth Table for T/R Switch
See next page for positive voltage operation.
V
CTL
(V)
Antenna
-5
Connected
0
Isolated
Truth Table for Changeover Switch
See next page for positive voltage operation.
Part Number
L
T
(nH)
C
T
(pF)
Freq. (GHz)
AF002C1-39
165
18.8
0.45
AF002C4-39
85
18.8
0.45
AF002C1-39
44
4.7
0.90
AF002C4-39
22
4.7
0.90
Component Values for T/R Switch Circuit
Antenna
C
T
D
S
G
To T/R Switch
V
CTL
Changeover Switch Schematic
T/R Switch Schematic
GaAs IC Control FET Series DC2.5 GHz
AF002C1-39, AF002C4-39
4
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 3/99A
S
D
G
RF Path
Shunt
-5
Insertion Loss
GND
RF
0
Isolation
Series
0
Insertion Loss
RF
RF
-5
Isolation
Truth Table
Negative Voltage Operation
Positive Voltage Operation
S
D
G
RF Path
Shunt
0
Insertion Loss
GND
RF
V
High
Isolation
Series
0
Isolation
RF
RF
V
High
Insertion Loss
C
BL
- Chose value for lowest impedance at desired operating frequency.
G (0, V
High
)
D
S
2
1
3
Shunt Configuration
C
T
V
S
10 k
G (0, V
High
)
D
S
2
1
3
Series Configuration
C
BL
C
BL
V
S
10 k
RF
RF
RF
RF
L
T
Positive Voltage Operation
DRAIN (D)
SOURCE (S)
GATE (G)
1
2
3
Pin Out
V
High
= +5 to +9 V (V
S
= V
High
0.2 V).
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