Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chip
Features
s
22.5 dBm Output Power @ 18 GHz
s
High Associated Gain, 9 dB @ 18 GHz
s
High Power Added Efficiency, 23%
s
Broadband Operation, DC40 GHz
s
0.25
m Ti/Pd/Au Gates
s
Passivated Surface
s
Through-Substrate Via Hole Grounding
Description
The AFM06P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25
m and a total
gate periphery of 600
m. The device has excellent gain
and power performance through 40 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. It employs
Ti/Pd/Au gate metallization and surface passivation to
ensure a rugged, reliable part. Through-substrate via holes
are incorporated into the chip to facilitate low inductance
grounding of the source for improved high frequency and
high gain performance.
AFM06P2-000
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (I
DSS
)
V
DS
= 2 V, V
GS
= 0 V
130.0
200.0
270.0
mA
Transconductance (gm)
90.0
120.0
mS
Pinch-off Voltage (V
P
) V
DS
= 5 V, I
DS
= 1.5 mA
1.0
3.0
5.0
-V
Gate to Drain
I
GD
= 600
A
8.0
12.0
-V
Breakdown Voltage (V
bgd
)
Output Power at 1 dB
22.5
dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
V
DS
= 5 V, I
DS
= 100 mA, F = 18 GHz
9.0
dB
Power Added Efficiency (
add) 23.0
%
Output Power at 1 dB
22.0
dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
) V
DS
= 5 V, I
DS
= 100 mA, F = 30 GHz
4.5
dB
Power Added Efficiency (
add) 15.0
%
Thermal Resistance (
JC
) T
BASE
= 25C
160.0
C/W
Electrical Specifications at 25C
0.395 mm
0.327 mm
Drain
Gate
0.655 mm
0.110 mm
0.110 mm
Characteristic
Value
Drain to Source Voltage (V
DS
) 6
V
Gate to Source Voltage (V
GS
) -4
V
Drain Current (I
DS
) I
DSS
Gate Current (I
GS
) 1
mA
Total Power Dissipation (P
T
) 1.1
W
Storage Temperature (T
ST
)
-65 to +150C
Channel Temperature (T
CH
) 175C
Absolute Maximum Ratings
Chip thickness = 0.1 mm.
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chip
AFM06P2-000
I-V
0
40
80
120
160
200
0
1
3
2
4
5
-0.5 V
-1.0 V
-1.5 V
-2.0 V
-2.5 V
V
DS
(V)
l
D
S
(
m
A
)
V
GS
= 0 V
Power Derating
0
50
100
150
200
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
P
T
(
W
)
T
BASE
(C)
0
0.25
0.50
0.75
1.00
1.25
1.50
Typical Performance Data
Ka Band Power GaAs MESFET Chip
AFM06P2-000
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
3
Specifications subject to change without notice. 6/99A
Typical S-Parameters (V
DS
= 5 V, I
DS
= 120 mA)
Freq.
S
11
S
21
S
12
S
22
MAG
(GHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
k
(dB)
2
0.943
-63.246
7.140
136.7680
0.031
53.027
0.340
-48.993
0.160
23.563
3
0.905
-86.534
6.080
120.3940
0.040
39.817
0.340
-66.574
0.240
21.828
4
0.876
-104.502
5.155
107.1240
0.045
29.754
0.346
-69.967
0.321
20.614
5
0.856
-118.460
4.405
96.0760
0.047
21.969
0.360
-90.387
0.403
19.690
6
0.843
-129.538
3.807
86.5660
0.048
15.797
0.368
-98.818
0.486
18.953
7
0.835
-138.558
3.328
68.1380
0.049
10.797
0.399
-105.932
0.569
18.348
8
0.830
-146.091
2.940
60.4900
0.048
6.688
0.423
-112.160
0.643
17.841
9
0.827
-152.503
2.619
63.4278
0.048
3.296
0.448
-117.776
0.693
1.410
10
0.825
-158.149
2.352
56.8180
0.046
0.510
0.473
-122.953
0.825
17.041
11
0.825
-163.140
2.125
50.5720
0.045
-1.735
0.499
-127.805
0.913
16.721
12
0.825
-167.642
1.931
44.6260
0.044
-3.476
0.524
-132.404
1.000
16.350
13
0.826
-171.656
1.672
38.9370
0.042
-4.733
0.549
-136.801
1.088
14.389
14
0.828
-175.561
1.615
33.4710
0.051
-5.512
0.564
-141.028
1.174
13.447
15
0.390
-169.110
1.485
28.2060
0.039
-5.818
0.598
-145.111
1.257
12.715
16
0.832
177.551
1.370
23.1220
0.038
-5.654
0.621
-149.064
1.336
12.105
17
0.834
167.439
1.267
18.2060
0.037
-5.028
0.643
-152.901
1.408
11.581
18
0.837
171.378
1.175
13.4470
0.036
-3.962
0.664
-156.631
1.471
11.124
19
0.839
168.496
1.091
8.8370
0.035
-2.492
0.685
-160.260
1.521
10.724
20
0.842
165.727
1.016
4.3690
0.034
-0.675
0.704
-163.695
1.556
10.373
21
0.845
163.057
0.947
0.0360
0.033
1.413
0.722
-167.239
1.574
10.066
22
0.847
160.476
0.884
-4.6500
0.033
3.678
0.740
-160.596
1.572
9.800
23
0.850
157.974
0.826
-8.2380
0.033
6.018
0.756
-173.869
1.551
9.574
24
0.852
155.545
0.773
-12.1880
0.034
8.333
0.722
-177.061
1.513
9.387
25
0.855
153.182
0.725
-16.0160
0.034
10.535
0.786
179.825
1.460
9.240
26
0.857
150.880
0.680
-19.7270
0.035
12.552
0.800
176.688
1.935
9.138
27
0.860
148.635
0.638
-23.3210
0.036
14.335
0.813
163.824
1.321
9.087
28
0.862
146.443
0.600
-26.8020
0.037
15.855
0.825
160.933
1.243
9.101
29
0.864
144.301
0.564
-30.1710
0.039
17.104
0.837
168.112
1.162
9.208
30
0.866
142.207
0.531
-33.4290
0.040
18.085
0.847
165.360
1.081
9.482
31
0.868
140.157
0.500
-36.5690
0.042
18.811
0.857
162.674
1.002
10.501
32
0.870
138.151
0.471
-39.6210
0.043
19.303
0.867
160.052
0.926
10.367
33
0.872
136.185
0.444
-42.5560
0.045
19.582
0.875
157.494
0.854
9.943
34
0.874
134.259
0.419
-45.3870
0.047
19.671
0.884
154.997
0.785
9.523
35
0.876
132.371
0.395
-48.1120
0.048
19.594
0.891
152.560
0.721
9.109
36
0.878
130.519
0.373
-50.7340
0.050
19.370
0.898
150.818
0.661
8.701
37
0.869
128.603
0.352
-53.2520
0.052
19.020
0.905
147.859
0.605
8.299
38
0.881
126.920
0.333
-55.6670
0.054
18.561
0.911
145.592
0.553
6.904
39
0.883
125.171
0.314
-567.9680
0.056
18.008
0.917
143.378
0.505
6.516
40
0.884
123.453
0.297
-60.1850
0.057
17.375
0.923
141.216
0.461
7.133
S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals.
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