ALLIANCE
SEMICONDUCTOR
High Performance
1M4
CMOS DRAM
AS4C14400
AS4C14405
1M-bit 4 CMOS DRAM (Fast page mode or EDO)
Preliminary information
Features
Organization: 1,048,576 words 4 bits
High speed
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
Low power consumption
- Active:
385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
Fast page mode (AS4C14400) or EDO (AS4C14405)
1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
Read-modify-write
TTL-compatible, three-state I/O
JEDEC standard packages
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
Single 5V power supply
ESD protection
2001V
Latch-up current
200 mA
Pin arrangement
GND
I/O3
I/O2
CAS
OE
A8
A7
I/O0
I/O1
WE
RAS
A9
A0
A1
TSOP
A6
A5
A4
A2
A3
V
CC
1
2
3
4
5
9
10
26
25
24
23
22
18
17
11
12
13
16
15
14
GND
I/O3
I/O2
CAS
OE
A8
A7
I/O0
I/O1
WE
RAS
A9
A0
A1
A6
A5
A4
A2
A3
V
CC
1
2
3
4
5
9
10
26
25
24
23
22
18
17
11
12
13
16
15
14
SOJ
Pin designation
Pin(s)
Description
A0 to A9
Address inputs
RAS
Row address strobe
I/O0 to I/O3
Input/output
OE
Output enable
CAS
Column address strobe
WE
Read/write control
V
CC
Power (5.0
0.5V)
GND
Ground
Selection guide
Shaded areas contain advance information.
Symbol
4C14400-40
4C14400-50
4C14400-60
4C14400-70
Unit
Maximum RAS access time
t
RAC
40
50
60
70
ns
Maximum column address access time
t
CAA
20
25
30
35
ns
Maximum CAS access time
t
CAC
10
13
15
18
ns
Maximum output enable (OE) access time
t
OEA
10
13
15
18
ns
Minimum read or write cycle time
t
RC
70
90
110
130
ns
Minimum fast page mode cycle time
t
PC
30
35
40
45
ns
Maximum operating current
I
CC1
90
80
70
60
mA
Maximum CMOS standby current
I
CC5
1.0
1.0
1.0
1.0
mA
AS4C14400
2
Functional description
The AS4C14400 is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words 4 bits. The AS4C14400 is
fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power
and wide operating margins at component and system levels.
The AS4C14400 features a high speed page mode operation in which high speed read, write and read-write are performed on any of the
1024
4 bits defined by the column address. The asynchronous column address uses an extremely short row address capture time to ease
the system level timing constraints associated with multiplexed addressing. Output is tri-stated by a column address strobe (CAS) which acts
as an output enable independent of RAS. Very fast CAS to output access time eases system design.
Refresh on the 1024 address combinations of A0 to A9 during a 16 ms period is accomplished by performing any of the following:
RAS-only refresh cycles
Hidden refresh cycles
CAS-before-RAS refresh cycles
Normal read or write cycles
The AS4C14400 is available in JEDEC standard 20/26-pin plastic SOJ and 20/26-pin plastic TSOP packages. System level features include
single power supply of 5.0
0.5V tolerance and direct interface with TTL logic families.
Logic block diagram
Recommended operating conditions
Recommended operating conditions apply to all specifications unless otherwise noted.
Parameter
Symbol
Minimum
Nominal
Maximum
Unit
Supply voltage
V
CC
4.5
5.0
5.5
V
GND
0.0
0.0
0.0
V
Input voltage
V
IH
2.4
V
CC
+ 1
V
V
IL
1.0
0.8
V
Operating temperature
TA
0
70
C
R
EFR
ES
H
CO
NT
ROL
LER
1024 1024 4
Array
(4,194,304)
Sense amp
A0
A1
A2
A3
A4
A5
A6
A7
I/O0
I/O3
Vcc
GND
A
d
dr
e
s
s
bu
f
f
e
r
A8
I/O2
I/O1
R
o
w d
eco
d
e
r
Column decoder
Data
I/O
OE
RAS
CAS
WE
A9
RAS clock
generator
CAS clock
generator
WE clock
generator
AS4C14400
3
Absolute maximum ratings
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
DC electrical characteristics
Shaded areas contain advance information.
Parameter
Symbol
Minimum
Maximum
Unit
Input voltage
V
in
-1.0
+7.0
V
Output voltage
V
out
-1.0
+7.0
V
Power supply voltage
V
CC
-1.0
+7.0
V
Storage temperature (plastic)
T
STG
-55
+150
C
Soldering temperature
time
T
SOLDER
260
10
o
C
sec
Power dissipation
P
D
1
W
DC output current
I
out
50
mA
Parameter
Symbol Test Conditions
-40
-50
-60
-70
Unit Notes
Min
Max
Min
Max
Min
Max
Min
Max
Input leakage current
I
I
0V
V
in
+5.5V
Pins not under test = 0V
-2
+2
-2
+2
-2
+2
-2
+2
A
Output leakage current
I
OZ
Outputs disabled,
0V
V
out
+5.5V
-10
+10 -10
+10 -10
+10 -10
+10 A
Operating power
supply current
I
CC1
RAS, CAS, Address
cycling: t
RC
=min
90
80
70
60
mA
1,2
TTL standby power
supply current
I
CC2
RAS = CAS = V
IH
2.0
2.0
2.0
2.0
mA
Average power supply
current, RAS refresh mode
I
CC3
RAS cycling, CAS = VIH,
t
RC
= min
90
80
70
60
mA
1
Fast page mode average
power supply current
I
CC4
RAS = V
IL
, CAS cycling,
Address cycling:
t
PC
= min
80
70
60
50
mA
1,2
CMOS standby power
supply current
I
CC5
RAS = CAS = V
CC
- 0.2V
1.0
1.0
1.0
1.0
mA
CAS-before-RAS refresh
power supply current
I
CC6
RAS, CAS cycling:
t
RC
= min
90
80
70
60
mA
1
Output voltage
V
OH
I
OUT
= -5.0 mA
2.4
2.4
2.4
2.4
V
V
OL
I
OUT
= 4.2 mA
0.4
0.4
0.4
0.4
V
AS4C14400
4
AC parameters common to all waveforms
Shaded areas contain advance information.
Read cycle
Shaded areas contain advance information.
Symbol
Parameter
-40
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
RC
Random read or write cycle time
70
90
110
130
ns
t
RP
RAS precharge time
20
30
40
50
ns
t
RAS
RAS pulse width
40
10K
50
10K
60
10K
70
10K
ns
t
CAS
CAS pulse width
10
13
15
18
ns
t
RCD
RAS to CAS delay time
18
30
20
37
20
45
20
52
ns
6
t
RAD
RAS to column address delay time
13
20
15
25
15
30
15
35
ns
7
t
RSH(R)
CAS to RAS hold time (read)
10
13
15
18
ns
t
CSH
RAS to CAS hold time
40
50
60
70
ns
t
CRP
CAS to RAS precharge time
0
0
0
0
ns
t
ASR
Row address setup time
0
0
0
0
ns
t
RAH
Row address hold time
8
10
10
10
ns
t
T
Transition time (rise and fall)
2
50
2
50
2
50
2
50
ns
4,5
t
REF
Refresh period
16
16
16
16
ms
3
t
CLZ
CAS to output in low Z
0
0
0
0
ns
8
Symbol
Parameter
-40
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
RAC
Access time from RAS
40
50
60
70
ns
6
t
CAC
Access time from CAS
10
13
15
18
ns
6,13
t
AA
Access time from address
20
25
30
35
ns
7,13
t
AR(R)
Column add hold from RAS
30
40
45
55
ns
t
RCS
Read command setup time
0
0
0
0
ns
t
RCH
Read command hold time to CAS
0
0
0
0
ns
9
t
RRH
Read command hold time to RAS
0
0
0
0
ns
9
t
RAL
Column address to RAS lead time
20
25
30
35
ns
t
CPN
CAS precharge time
5
10
10
10
ns
t
ODS
Output disable setup time
0
0
0
0
ns
t
OFF
Output buffer turn-off time
0
10
0
13
0
15
0
18
ns
8,10
AS4C14400
5
Write cycle
Shaded areas contain advance information.
Read-modify-write cycle
Shaded areas contain advance information.
Symbol
Parameter
-40
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
ASC
Column
address
setup
time
0
0
0
0
ns
t
CAH
Column
address
hold
time
8
10
10
15
ns
t
AWR
Column address hold time to RAS
30
40
45
55
ns
t
WCS
Write
command
setup
time
0
0
0
0
ns
11
t
WCH
Write
command
hold
time
5
10
10
15
ns
11
t
WCR
Write command hold time to RAS
30
40
45
55
ns
t
WP
Write
command
pulse
width
8
10
10
15
ns
t
RWL
Write
command
to
RAS lead time
10
13
15
18
ns
t
CWL
Write
command
to
CAS lead time
10
13
15
18
ns
t
DS
Data-In
setup
time
0
0
0
0
ns
12
t
DH
Data-In
hold
time
8
10
10
15
ns
12
t
DHR
Data-In
hold
time
to
RAS
30
40
45
55
ns
Symbol
Parameter
-40
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
RWC
Read-write
cycle
time
105
131
155
181
ns
t
RWD
RAS to WE delay time
60
73
85
98
ns
11
t
CWD
CAS to WE delay time
30
36
40
46
ns
11
t
AWD
Column
address
to
WE delay time
40
48
55
63
ns
11
t
RSH(W)
CAS to RAS hold time (write)
10
13
15
18
ns
t
CAS(W)
CAS pulse width (write)
10
13
15
18
ns
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