Document Outline
- Features
- Logic block diagram
- Pin arrangement
- Selection guide
- Functional description
- Absolute maximum ratings
- Truth table
- Capacitance (f = 1 MHz, Ta = 25 C, VCC = NOMINAL)2
- Read cycle (over the operating range)3,9,12
- Write cycle (over the operating range)11, 12
- Write waveform 1 (WE controlled)10,11,12
- Write waveform 2 (CE1 and CE2 controlled)10,11,12
- AC test conditions
- Notes
- Ordering codes
- Note: Add suffix N to the above part number for LEAD FREE PARTS (Ex: AS7C1024B-10TCN)
- Part numbering system
- Key to switching waveforms
- Read waveform 1 (address controlled)3,6,7,9,12
- Read waveform 2 (CE1, CE2, and OE controlled)3,6,8,9,12
March 2004
Copyright Alliance Semiconductor. All rights reserved.
AS7C1024B
5V 128K X 8 CMOS SRAM
3/26/04, v 1.2
Alliance Semiconductor
P. 1 of 9
Features
Industrial and commercial temperatures
Organization: 131,072 words x 8 bits
High speed
- 10/12/15/20 ns address access time
- 5/6/7/8 ns output enable access time
Low power consumption: ACTIVE
- 605 mW / max @ 10 ns
Low power consumption: STANDBY
- 55 mW / max CMOS
6T 0.18u CMOS technology
Easy memory expansion with CE1, CE2, OE inputs
TTL/LVTTL-compatible, three-state I/O
32-pin JEDEC standard packages
- 300 mil SOJ
- 400 mil SOJ
- 8 20mm TSOP 1
- 8 x 13.4mm sTSOP 1
ESD protection
2000 volts
Latch-up current
200 mA
Logic block diagram
512 x 256 x 8
Array
(1,048,576)
Sense a
m
p
Input buffer
A10 A1
1
A12 A13 A14 A15 A16
I/O0
I/O7
OE
CE1
WE
Column decoder
Row decod
er
Control
circuit
A9
A0
A1
A2
A3
A4
A5
A6
A7
V
CC
GND
A8
CE2
Pin arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
A
S
7C102
4B
32-pin SOJ (300 mil)
V
CC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O4
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
I/O5
I/O3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
32
31
30
29
28
27
26
25
24
23
22
21
AS7C1024B
20
19
15
16
18
17
32-pin (8 x 20mm) TSOP I
32-pin SOJ (400 mil)
32-pin (8 x 13.4mm) sTSOP1
Selection guide
-10
-12
-15
-20
Unit
Maximum address access time
10
12
15
20
ns
Maximum output enable access
time
5
6
7
8
ns
Maximum Operating Current
110
100
90
80
mA
Maximum CMOS standby Current
10
10
10
10
mA
AS7C1024B
3/26/04, v 1.2
Alliance Semiconductor
P. 2 of 9
Functional description
The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8
bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 10/12/15/20 ns with output enable access times (t
OE
) of 5/6/7/8 ns are ideal for high
performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.
When CE1 is high or CE2 is low, the devices enter standby mode. If inputs are still toggling, the device will consume I
SB
power. If the bus is
static, then full standby power is reached (I
SB1
). For example, the AS7C1024B is guaranteed not to exceed 55 mW under nominal full standby
conditions.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0 through I/O7 is
written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external
devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high. The chips drive I/
O pins with the data word referenced by the input address. When either chip enable is inactive, output enable is inactive, or write enable is active,
output drivers stay in high-impedance mode.
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Key: X = don't care, L = low, H = high
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
Voltage on V
CC
relative to GND
V
t1
0.50
+7.0
V
Voltage on any pin relative to GND
V
t2
0.50
V
CC
+0.50
V
Power dissipation
P
D
1.0
W
Storage temperature (plastic)
T
stg
65
+150
C
Ambient temperature with V
CC
applied
T
bias
55
+125
C
DC current into outputs (low)
I
OUT
20
mA
Truth table
CE1
CE2
WE
OE
Data
Mode
H
X
X
X
High Z
Standby (I
SB
, I
SB1
)
X
L
X
X
High Z
Standby (I
SB
, I
SB1
)
L
H
H
H
High Z
Output disable (I
CC
)
L
H
H
L
D
OUT
Read (I
CC
)
L
H
L
X
D
IN
Write (
ICC
)
AS7C1024B
3/26/04, v 1.2
Alliance Semiconductor
P. 3 of 9
Capacitance (f = 1 MHz, T
a
= 25
C, V
CC
= NOMINAL)
2
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
C
IN
A, CE1, CE2, WE, OE
V
IN
= 0V
5
pF
I/O capacitance
C
I/O
I/O
V
IN
= V
OUT
= 0V
7
pF
Recommended operating conditions
V
IL
min = -1.0V for pulse width less than 5ns
V
IH
max = V
CC
+2.0V for pulse width less than 5ns.
DC operating characteristics (over the operating range)
1
Parameter
Symbol
Min
Nominal
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Input Voltage
V
IH
2.2
-
V
CC
+ 0.5
V
V
IL
0.5
0.8
V
Ambient operating
temperature
commercial
T
A
0
70
C
industrial
T
A
40
85
C
Parameter
Sym
Test conditions
-10
-12
-15
-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Input leakage
current
|I
LI
|
V
CC
= Max, V
IN
= GND to V
CC
-
1
1
1
1
A
Output leakage
current
|I
LO
|
V
CC
= Max, CE1 = V
IH
or
CE2 = V
IL
, V
OUT
= GND to V
CC
-
1
1
1
1
A
Operating power
supply current
I
CC
V
CC
= Max, CE1
V
IL
,
CE2
V
IH
, f = f
Max
,
I
OUT
= 0 mA
-
110
100
90
80
mA
Standby power
supply current
I
SB
V
CC
= Max, CE1
V
IH
and/or
CE2
V
IL
, f = f
Max
-
50
45
45
40
mA
I
SB1
V
CC
= Max, CE1
V
CC
0.2V
and/or CE2
0.2V
V
IN
0.2V or
V
IN
V
CC
0.2V, f = 0
-
10
10
10
10
Output voltage
V
OL
I
OL
= 8 mA, V
CC
= Min
-
0.4
0.4
0.4
0.4
V
V
OH
I
OH
= 4 mA, V
CC
= Min
2.4
-
2.4
2.4
2.4
AS7C1024B
3/26/04, v 1.2
Alliance Semiconductor
P. 4 of 9
Read cycle (over the operating range)
3,9,12
Parameter
Symbol
-10
-12
-15
-20
Unit Notes
Min Max Min Max Min Max Min Max
Read cycle time
t
RC
10
-
12
15
20
ns
Address access time
t
AA
-
10
12
15
20
ns
3
Chip enable (CE1) access time
t
ACE1
-
10
12
15
20
ns
3, 12
Chip enable (CE2) access time
t
ACE2
-
10
12
15
20
ns
3, 12
Output enable (OE) access time
t
OE
-
5
6
7
8
ns
Output hold from address change t
OH
3
-
3
3
3
ns
5
CE1 Low to output in low Z
t
CLZ1
3
-
3
3
3
ns
4, 5, 12
CE2 High to output in low Z
t
CLZ2
3
-
3
3
3
ns
4, 5, 12
CE1 Low to output in high Z
t
CHZ1
-
4
5
6
7
ns
4, 5, 12
CE2 Low to output in high Z
t
CHZ2
-
4
5
6
7
ns
4, 5, 12
OE Low to output in low Z
t
OLZ
0
-
0
0
0
ns
4, 5
OE High to output in high Z
t
OHZ
4
5
6
7
ns
4, 5
Power up time
t
PU
0
-
0
0
0
ns
4, 5, 12
Power down time
t
PD
10
12
15
20
ns
4, 5, 12
Key to switching waveforms
Read waveform 1 (address controlled)
3,6,7,9,12
Read waveform 2 (CE1, CE2, and OE controlled)
3,6,8,9,12
Undefined / don't care
Falling input
Rising input
Address
D
OUT
Data valid
t
OH
t
AA
t
RC
supply
Current
CE2
OE
D
OUT
t
OE
t
OLZ
t
ACE1
,
tACE2
t
CHZ1
, t
CHZ2
t
CLZ1
, t
CLZ2
t
PU
t
PD
I
CC
I
SB
50%
50%
Data valid
t
RC1
CE1
t
OHZ
AS7C1024B
3/26/04, v 1.2
Alliance Semiconductor
P. 5 of 9
Write waveform 1 (WE controlled)
10,11,12
Write cycle (over the operating range)
11, 12
Parameter
Symbol
-10
-12
-15
-20
Unit
Notes
Min Max Min
Max
Min Max Min Max
Write cycle time
t
WC
10
-
12
15
20
ns
Chip enable (CE1) to write end
t
CW1
8
-
9
10
12
ns
12
Chip enable (CE2) to write end
t
CW2
8
-
9
10
12
ns
12
Address setup to write end
t
AW
8
-
9
10
12
ns
Address setup time
t
AS
0
0
0
0
ns
12
Write pulse width
t
WP
7
8
9
12
ns
Write recovery time
t
WR
0
-
0
0
0
ns
Address hold from end of write
t
AH
0
-
0
0
0
ns
Data valid to write end
t
DW
5
6
8
10
ns
Data hold time
t
DH
0
0
0
0
ns
4, 5
Write enable to output in high Z
t
WZ
-
5
6
7
8
ns
4, 5
Output active from write end
t
OW
1
-
1
1
2
ns
4, 5
t
AW
t
AH
t
WC
Address
WE
D
OUT
t
DH
t
OW
t
DW
t
WZ
t
WP
t
AS
Data valid
D
IN
t
WR
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