April 2005
Copyright Alliance Semiconductor. All rights reserved.
AS7C25512NTF32A
AS7C25512NTF36A
4/21/05, v 1.2
Alliance Semiconductor
P. 1 of 18
2.5V 512K 32/36 Flowthrough Synchronous SRAM with NTD
TM
Features
Organization: 524,288 words 32 or 36 bits
NTD
TM
architecture for efficient bus operation
Fast clock to data access: 7.5/8.5/10 ns
Fast OE access time:
3.5/4.0 ns
Fully synchronous operation
Flow-through mode
Asynchronous output enable control
Available in 100-pin TQFP package
Individual byte write and global write
Clock enable for operation hold
Multiple chip enables for easy expansion
2.5V core power supply
Self-timed write cycles
Interleaved or linear burst modes
Snooze mode for standby operation
Logic block diagram
Selection guide
-75
-85
-10
Units
Minimum cycle time
8.5
10
12
ns
Maximum clock access time
7.5
8.5
10
ns
Maximum operating current
275
250
230
mA
Maximum standby current
90
80
80
mA
Maximum CMOS standby current (DC)
60
60
60
mA
W
r
ite Buf
fe
r
Address
D
Q
CLK
register
Output
Buffer
DQ[a,b,c,d]
19
19
CLK
CE0
CE1
CE2
A[18:0]
OE
CEN
Control
CLK
logic
Data
D
Q
CLK
Input
Register
32/36
32/36
OE
512K x 32/36
SRAM
Array
R/W
DQ[a,b,c,d]
BWb
BWd
CLK
Q
D
ADV / LD
LBO
Burst logic
addr. registers
Write delay
19
ZZ
CLK
32/36
32/36
32/36
32/36
BWc
BWa
AS7C25512NTF32A/36A
4/21/05, v 1.2
Alliance Semiconductor
P. 2 of 18
16 Mb 2.5V Synchronous SRAM products list
1,2
1 Core Power Supply: VDD = 2.5V + 0.125V
2 I/O Supply Voltage: VDDQ = 2.5V + 0.125V
3 Refer corresponding product datasheets for the latest information on Clock Speed and Clock Access Time availability.
PL-SCD
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect
PL-DCD
:
Pipelined Burst Synchronous SRAM - Double Cycle Deselect
FT
:
Flow-through Burst Synchronous SRAM
NTD
1
-PL
:
Pipelined Burst Synchronous SRAM with NTD
TM
NTD-FT
:
Flow-through Burst Synchronous SRAM with NTD
TM
Org
Part Number
Mode
Speed
3
1MX18
AS7C251MPFS18A
PL-SCD
166/133 MHz
512KX32
AS7C25512PFS32A
PL-SCD
166/133 MHz
512KX36
AS7C25512PFS36A
PL-SCD
166/133 MHz
1MX18
AS7C251MPFD18A
PL-DCD
166/133 MHz
512KX32
AS7C25512PFD32A
PL-DCD
166/133 MHz
512KX36
AS7C25512PFD36A
PL-DCD
166/133 MHz
1MX18
AS7C251MFT18A
FT
7.5/8.5/10 ns
512KX32
AS7C25512FT32A
FT
7.5/8.5/10 ns
512KX36
AS7C25512FT36A
FT
7.5/8.5/10 ns
1MX18
AS7C251MNTD18A
NTD-PL
166/133 MHz
512KX32
AS7C25512NTD32A
NTD-PL
166/133 MHz
512KX36
AS7C25512NTD36A
NTD-PL
166/133 MHz
1MX18
AS7C251MNTF18A
NTD-FT
7.5/8.5/10 ns
512KX32
AS7C25512NTF32A
NTD-FT
7.5/8.5/10 ns
512KX36
AS7C25512NTF36A
NTD-FT
7.5/8.5/10 ns
1. NTD: No Turnaround Delay. NTD
TM
is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property
of their respective owners.
AS7C25512NTF32A/36A
4/21/05, v 1.2
Alliance Semiconductor
P. 3 of 18
100-pin TQFP - top view
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
LBO
A
A
A
A
A1
A0
NC
NC
V
SS
V
DD
NC
NC
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A A
CE0
CE1
BWd
BWc
BWb
BW
a
CE2
V
DD
V
SS
CLK
R/W
CEN
OE
ADV/
LD
A
A
A
A
TQFP 14 x 20mm
A
NC/DQPc
DQc0
DQc1
V
DDQ
V
SSQ
DQc2
DQc3
DQc4
DQc5
V
SSQ
V
DDQ
DQc6
DQc7
NC
V
DD
NC
V
SS
DQd0
DQd1
V
DDQ
V
SSQ
DQd2
DQd3
DQd4
DQd5
V
SSQ
V
DDQ
DQd6
DQd7
NC/DQPd
DQPb/NC
DQb7
DQb6
V
DDQ
V
SSQ
DQb5
DQb4
DQb3
DQb2
V
SSQ
V
DDQ
DQb1
DQb0
V
SS
ZZ
DQa7
DQa6
V
DDQ
V
SSQ
DQa5
DQa4
DQa3
DQa2
V
SSQ
V
DDQ
DQa1
DQa0
DQPa/NC
V
DD
NC
Note: For pins 1, 30, 51, and 80, NC applies to the x32 configuration. DQPn applies to the x36
configuration.
AS7C25512NTF32A/36A
4/21/05, v 1.2
Alliance Semiconductor
P. 4 of 18
Functional Description
The AS7C25512NTF32A/36A family is a high performance CMOS 16 Mbit synchronous Static Random Access Memory
(SRAM) organized as 524,288 words 32 or 36 bits and incorporates a LATE Write.
This variation of the 16Mb+ synchronous SRAM uses the No Turnaround Delay (NTD
TM
) architecture, featuring an enhanced
write operation that improves bandwidth over flowthrough burst devices. In a normal flowthrough burst device, the write data,
command, and address are all applied to the device on the same clock edge. If a read command follows this write command,
the system must wait for one dead cycle for valid data to become available. This dead cycle can significantly reduce overall
bandwidth for applications requiring random access or read-modify-write operations.
NTD
TM
devices use the memory bus more efficiently by introducing a write latency which matches the one-cycle flow-
through read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear.
With NTD
TM
, write and read operations can be used in any order without producing dead bus cycles.
Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full 36
bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is applied
to the device one clock cycle later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled for write
operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is de-selected by
any of the three chip enable inputs.
Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip
select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any
device operations, including burst, can be stalled using the CEN=1, the clock enable input.
The AS7C25512NTF32A/36A operates with a 2.5V 5% power supply for the device core (V
DD
). DQ circuits use a separate
power supply (V
DDQ
). These devices are available in a 100-pin TQFP package.
TQFP capacitance
* Guaranteed not tested
TQFP thermal resistance
Parameter
Symbol
Test conditions
Min
Max
Unit
Input capacitance
C
IN
*
V
IN
= 0V
-
5
pF
I/O capacitance
C
I/O
*
V
OUT
= 0V
-
7
pF
Description
Conditions
Symbol
Typical
Units
Thermal resistance
(junction to ambient)
1
1 This parameter is sampled
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51
1layer
JA
40
C/W
4layer
JA
22
C/W
Thermal resistance
(junction to top of case)
1
JC
8
C/W
AS7C25512NTF32A/36A
4/21/05, v 1.2
Alliance Semiconductor
P. 5 of 18
Signal descriptions
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to I
SB2
. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, I
SB2
is guaranteed after the time t
ZZI
is met. After entering SNOOZE MODE, all inputs except ZZ
is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during t
PUS
, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE.
Signal
I/O Properties
Description
CLK
I
CLOCK
Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock.
CEN
I
SYNC
Clock enable. When de-asserted high, the clock input signal is masked.
A, A0, A1
I
SYNC
Address. Sampled when all chip enables are active and ADV/LD is asserted.
DQ[a,b,c,d]
I/O
SYNC
Data. Driven as output when the chip is enabled and OE is active.
CE0, CE1,
CE2
I
SYNC
Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted.
Are ignored when ADV/LD is high.
ADV/LD
I
SYNC
Advance or Load. When sampled high, the internal burst address counter will increment in
the order defined by the LBO input value. When low, a new address is loaded.
R/W
I
SYNC
A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE
operation. Is ignored when ADV/LD is high.
BW[a,b,c,d]
I
SYNC
Byte write enables. Used to control write on individual bytes. Sampled along with WRITE
command and BURST WRITE.
OE
I
ASYNC
Asynchronous output enable. I/O pins are not driven when OE is inactive.
LBO
I
STATIC
Selects Burst mode. When tied to V
DD
or left floating, device follows interleaved Burst order. When
driven Low, device follows linear Burst order. This signal is internally pulled High.
ZZ
I ASYNC
Snooze. Places device in low power mode; data is retained. Connect to GND if unused.
This signal is internally pulled Low.
NC
-
-
No connect
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