January 2001
Preliminary Information
Copyright Alliance Semiconductor. All rights reserved.
AS7C3364PFS32A
AS7C3364PFS36A
3.3V 64K X 32/36 pipeline burst synchronous SRAM
2/1/01; V.0.9
Alliance Semiconductor
P. 1 of 11
Features
Organization: 65,536 words 32 or 36 bits
Fast clock speeds to 166 MHz in LVTTL/LVCMOS
Fast clock to data access: 3.5/3.8/4.0/5.0 ns
Fast OE access time: 3.5/3.8/4.0/5.0 ns
Fully synchronous register-to-register operation
Single register "Flow-through" mode
Single-cycle deselect
Pentium
*
compatible architecture and timing
Asynchronous output enable control
Economical 100-pin TQFP package
Byte write enables
Multiple chip enables for easy expansion
3.3 core power supply
2.5V or 3.3V I/O operation with separate V
DDQ
30 mW typical standby power in power down mode
Logic block diagram
Q0
Q1
64K 32/36
Memory
array
Burst logic
CLK
CLR
CE
Address
D
Q
CE
CLK
DQ
d
CLK
D
Q
Byte write
registers
register
DQ
c
CLK
D
Q
Byte write
registers
DQ
b
CLK
D
Q
Byte write
registers
DQ
a
CLK
D
Q
Byte write
registers
Enable
CLK
D
Q
register
Enable
CLK
D
Q
delay
register
CE
Output
registers
Input
registers
Power
down
DATA [35:0]
4
36/32
16
14
16
16
GWE
BWE
BW
d
ADV
ADSC
ADSP
CLK
CE0
CE1
CE2
BW
c
BW
b
BW
a
OE
A[15:0]
ZZ
LBO
OE
FT
CLK
CLK
36/32
DATA [31:0]
Pin arrangement
DQP
c
/NC
DQ
c
DQ
c
V
DDQ
V
SSQ
DQ
c
DQ
c
DQ
c
DQ
c
V
SSQ
V
DDQ
DQ
c
DQ
c
FT
V
DD
NC
V
SS
DQ
d
DQ
d
V
DDQ
V
SSQ
DQ
d
DQ
d
DQ
d
DQ
d
V
SSQ
V
DDQ
DQ
d
DQ
d
DQP
d
/NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQP
b
/NC
DQ
b
DQ
b
V
DDQ
V
SSQ
DQ
b
DQ
b
DQ
b
DQ
b
V
SSQ
V
DDQ
DQ
b
DQ
b
V
SS
ZZ
DQ
a
DQ
a
V
DDQ
V
SSQ
DQ
a
DQ
a
DQ
a
DQ
a
V
SSQ
V
DDQ
DQ
a
DQ
a
DQP
a
/NC
LB
O
A5
A4
A3
A2
A1
A0
NC
NC
V
SS
V
DD
NC
NC
A10
A11
A12
A13
A14
A15
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A6
A7
CE0
CE1
BW
d
BW
c
BW
b
BW
a
CE2
V
DD
V
SS
CLK
GW
E
BW
E
OE
AD
SC
AD
SP
AD
V
A8
A9
NC
VDD
NC
Note: Pins 1,30,51,80 are NC for 32
TQFP 14 20 mm
Selection guide
*
Pentium
is a registered trademark of Intel Corporation. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this docu-
ment are the property of their respective owners.
AS7C3364PFS32A
166
AS7C3364PFS32A
150
AS7C3364PFS32A
133
AS7C3364PFS32A
100
Units
Minimum cycle time
6
6.7
7.5
10
ns
Maximum clock frequency
166
150
133
100
MHz
Maximum pipelined clock access time
3.5
3.8
4
5
ns
Maximum operating current
475
450
425
325
mA
Maximum standby current
130
110
100
90
mA
Maximum CMOS standby current (DC)
30
30
30
30
mA
AS7C3364PFS32A
AS7C3364PFS36A
2/1/01
Alliance Semiconductor
P. 2 of 11
Functional description
The AS7C3364PFS32A and AS7C3364PFS36A are high-performance CMOS 2-Mbit synchronous Static Random Access Memory (SRAM)
devices organized as 65,536 words 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given
technology.
Timing for these devices is compatible with existing Pentium
synchronous cache specifications. This architecture is suited for ASIC, DSP
(TMS320C6X), and PowerPC
TM
*
-based systems in computing, datacomm, instrumentation, and telecommunications systems.
Fast cycle times of 6/6.7/7.5/10 ns with clock access times (t
CD
) of 3.5/3.8/4.0/5.0 ns enable 166, 150, 133 and 100 MHz bus frequencies.
Three chip enable (CE) inputs permit easy memory expansion. Burst operation is initiated in one of two ways: the controller address strobe
(ADSC), or the processor address strobe (ADSP). The burst advance pin (ADV) allows subsequent internally generated burst addresses.
Read cycles are initiated with ADSP (regardless of WE and ADSC) using the new external address clocked into the on-chip address register
when ADSP is sampled Low, the chip enables are sampled active, and the output buffer is enabled with OE. In a read operation the data accessed
by the current address, registered in the address registers by the positive edge of CLK, are carried to the data-out registers and driven on the
output pins on the next positive edge of CLK. ADV is ignored on the clock edge that samples ADSP asserted, but is sampled on all subsequent
clock edges. Address is incremented internally for the next access of the burst when ADV is sampled Low, and both address strobes are High.
Burst operation is selectable with the LBO input. With LBO unconnected or driven High, burst operations use a Pentium
count sequence. With
LBO driven LOW, the device uses a linear count sequence suitable for PowerPC
TM
and many other applications.
Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable GWE writes all 32/
36 bits regardless of the state of individual BW[a:d] inputs. Alternately, when GWE is High, one or more bytes may be written by asserting
BWE and the appropriate individual byte BWn signal(s).
BWn is ignored on the clock edge that samples ADSP Low, but is sampled on all subsequent clock edges. Output buffers are disabled when BWn
is sampled LOW (regardless of OE). Data is clocked into the data input register when BWn is sampled Low. Address is incremented internally to
the next burst address if BWn and ADV are sampled Low.
Read or write cycles may also be initiated with ADSC instead of ADSP. The differences between cycles initiated with ADSC and ADSP follow.
ADSP must be sampled HIGH when ADSC is sampled LOW to initiate a cycle with ADSC.
WE signals are sampled on the clock edge that samples ADSC LOW (and ADSP High).
Master chip enable CE0 blocks ADSP, but not ADSC.
ASAS7C3364PFS32A and ASAS7C3364PFS36A family operates from a core 3.3V power supply. I/Os use a separate power supply that can
operate at 2.5V or 3.3V. These devices are available in a 100-pin 14 20 mm TQFP package.
*PowerPC
TM
is a tradenark International Business Machines Corporation.
Capacitance
Write enable truth table (per byte)
Key:
X = Don't Care, L = Low, H = High, T = True, F = False; *=
Valid read; n = a, b, c, d;
WE
,
WEn
= internal write signal.
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
C
IN
Address and control pins
V
IN
= 0V
5
pF
I/O capacitance
C
I/O
I/O pins
V
IN
= V
OUT
= 0V
7
pF
GWE
BWE
BWn
WEn
L
X
X
T
H
L
L
T
H
H
X
F*
H
L
H
F
*
AS7C3364PFS32A
AS7C3364PFS36A
2/1/01
Alliance Semiconductor
P. 3 of 11
Signal descriptions
Absolute maximum ratings
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions may affect reliability.
Signal
I/
O
Properties
Description
CLK
I
CLOCK
Clock. All inputs except OE, FT, ZZ, LBO are synchronous to this clock.
A0A15
I
SYNC
Address. Sampled when all chip enables are active and ADSC or ADSP are asserted.
DQ[a,b,c,d]
I/O SYNC
Data. Driven as output when the chip is enabled and OE is active.
CE0
I
SYNC
Master chip enable. Sampled on clock edges when ADSP or ADSC is active. When CE0 is
inactive, ADSP is blocked. Refer to the Synchronous Truth Table for more information.
CE1, CE2
I
SYNC
Synchronous chip enables. Active HIGH and active Low, respectively. Sampled on clock
edges when ADSC is active or when CE0 and ADSP are active.
ADSP
I
SYNC
Address strobe processor. Asserted LOW to load a new bus address or to enter standby
mode.
ADSC
I
SYNC
Address strobe controller. Asserted LOW to load a new address or to enter standby mode.
ADV
I
SYNC
Advance. Asserted LOW to continue burst read/write.
GWE
I
SYNC
Global write enable. Asserted LOW to write all 32/36 bits. When High, BWE and BW[a:d]
control write enable.
BWE
I
SYNC
Byte write enable. Asserted LOW with GWE = HIGH to enable effect of BW[a:d] inputs.
BW[a,b,c,d] I
SYNC
Write enables. Used to control write of individual bytes when GWE = HIGH and BWE =
Low. If any of BW[a:d] is active with GWE = HIGH and BWE = LOW the cycle is a write
cycle. If all BW[a:d] are inactive the cycle is a read cycle.
OE
I
ASYNC
Asynchronous output enable. I/O pins are driven when OE is active and the chip is in read
mode.
LBO
I
STATIC
default =
HIGH
Count mode. When driven High, count sequence follows Intel XOR convention. When
driven Low, count sequence follows linear convention. This signal is internally pulled High.
18
FT
I
STATIC
Flow-through mode.When low, enables single register flow-through mode. Connect to V
DD
if unused or for pipelined operation.
ZZ
I
ASYNC
Sleep. Places device in low power mode; data is retained. Connect to GND if unused.
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
V
DD
, V
DDQ
0.5
+4.6
V
Input voltage relative to GND (input pins)
V
IN
0.5
V
DD
+ 0.5
V
Input voltage relative to GND (I/O pins)
V
IN
0.5
V
DDQ
+ 0.5
V
Power dissipation
P
D
1.8
W
DC output current
I
OUT
50
mA
Storage temperature (plastic)
T
stg
65
+150
o
C
Temperature under bias
T
bias
65 +135
o
C
AS7C3364PFS32A
AS7C3364PFS36A
2/1/01
Alliance Semiconductor
P. 4 of 11
Synchronous truth table
Key: X = Don't Care, L = Low, H = High.
1
See "Write enable truth table"on page 2 for more information.
2
Q in flow through mode.
3
For write operation following a READ,
OE
must be HIGH before the input data set up time and held HIGH throughout the input hold time.
Recommended operating conditions
CE0
CE1
CE2
ADSP
ADSC
ADV
WEn
1
OE
Address accessed
CLK
Operation
DQ
H
X
X
X
L
X
X
X
NA
L to H
Deselect
Hi
-
Z
L
L
X
L
X
X
X
X
NA
L to H
Deselect
Hi
-
Z
L
L
X
H
L
X
X
X
NA
L to H
Deselect
Hi
-
Z
L
X
H
L
X
X
X
X
NA
L to H
Deselect
Hi
-
Z
L
X
H
H
L
X
X
X
NA
L to H
Deselect
Hi
-
Z
L
H
L
L
X
X
X
L
External
L to H
Begin read
Hi
-
Z
2
L
H
L
L
X
X
X
H
External
L to H
Begin read
Hi
-
Z
L
H
L
H
L
X
F
L
External
L to H
Begin read
Hi
-
Z
2
L
H
L
H
L
X
F
H
External
L to H
Begin read
Hi
-
Z
X
X
X
H
H
L
F
L
Next
L to H
Cont. read
Q
X
X
X
H
H
L
F
H
Next
L to H
Cont. read
Hi
-
Z
X
X
X
H
H
H
F
L
Current
L to H
Suspend read
Q
X
X
X
H
H
H
F
H
Current
L to H
Suspend read
Hi
-
Z
H
X
X
X
H
L
F
L
Next
L to H
Cont. read
Q
H
X
X
X
H
L
F
H
Next
L to H
Cont. read
Hi
-
Z
H
X
X
X
H
H
F
L
Current
L to H
Suspend read
Q
H
X
X
X
H
H
F
H
Current
L to H
Suspend read
Hi
-
Z
L
H
L
H
L
X
T
X
External
L to H
Begin write
D
3
X
X
X
H
H
L
T
X
Next
L to H
Cont. write
D
H
X
X
X
H
L
T
X
Next
L to H
Cont. write
D
X
X
X
H
H
H
T
X
Current
L to H
Suspend write
D
H
X
X
X
H
H
T
X
Current
L to H
Suspend write
D
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage
V
DD
3.135
3.3
3.6
V
V
SS
0.0
0.0
0.0
3.3V I/O supply
voltage
V
DDQ
3.135
3.3
3.6
V
V
SSQ
0.0
0.0
0.0
2.5V I/O supply
voltage
V
DDQ
2.35
2.5
2.9
V
V
SSQ
0.0
0.0
0.0
Input voltages
Address and
control pins
V
IH
2.0
V
DD
+ 0.3
V
V
IL
0.5
*
* V
IL
min = 2.0V for pulse width less than 0.2 t
RC
.
Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications.
0.8
I/O pins
V
IH
2.0
V
DDQ
+ 0.3
V
V
IL
0.5
*
0.8
Ambient operating temperature
T
A
0
70
C
AS7C3364PFS32A
AS7C3364PFS36A
2/1/01
Alliance Semiconductor
P. 5 of 11
TQFP thermal resistance
* This parameter is sampled.
DC electrical characteristics
DC electrical characteristics for 2.5V I/O operation
Description
Conditions
Symbol
Typical
Units
Thermal resistance
(junction to ambient)
*
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per EIA/
JESD51
JA
46
C/W
Thermal resistance
(junction to top of case)
*
JC
2.8
C/W
Parameter
Symbol
Test conditions
166
150
133
100
Unit
Min Max Min Max Min Max Min Max
Input leakage
current
*
* LBO pin has an internal pull-up and input leakage = 10
a.
Note: ICC given with no output loading. ICC increases with faster cycles times and greater output loading.
|I
LI
|
V
DD
= Max, V
IN
= GND to V
DD
2
2
2
2
A
Output leakage
current
|I
LO
|
OE
V
IH
, V
DD
= Max,
V
OUT
= GND to V
DD
2
2
2
2
A
Operating power
supply current
I
CC
CE0 = V
IL
, CE1 = V
IH
, CE2 = V
IL
,
f = f
Max
, I
OUT
= 0 mA
475
450
425
325
mA
Standby power
supply current
I
SB
Deselected, f = f
Max
, ZZ
V
IL
130
110
100
90
mA
I
SB1
Deselected, f = 0, ZZ
0.2V
all V
IN
0.2V or
V
DD
0.2V
30
30
30
30
I
SB2
Deselected, f = f
Max
, ZZ
V
DD
0.2V
All V
IN
V
IL
or
V
IH
30
30
30
30
Output voltage
V
OL
I
OL
= 8 mA, V
DDQ
= 3.465V
0.4
0.4
0.4
0.4
V
V
OH
I
OH
= 4 mA, V
DDQ
= 3.135V
2.4
2.4
2.4
2.4
Parameter
Symbol
Test conditions
166
150
133
100
Unit
Min Max Min Max Min Max Min Max
Output leakage
current
|I
LO
|
OE
V
IH
, V
DD
= Max,
V
OUT
= GND to V
DD
1
1
1
1
1
1
1
1
A
Output voltage
V
OL
I
OL
= 2 mA, V
DDQ
= 2.65V
0.7
0.7
0.7
0.7
V
V
OH
I
OH
= 2 mA, V
DDQ
= 2.35V
1.7
1.7
1.7
1.7
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