PRELIMINARY
Publication# 21557
Rev: C Amendment/0
Issue Date: April 1998
Am29LV001B
1 Megabit (128 K x 8-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
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Single power supply operation
-- Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
-- Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
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Manufactured on 0.35 m process technology
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High performance
-- Full voltage range: access times as fast as 55 ns
-- Regulated voltage range: access times as fast
as 45 ns
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Ultra low power consumption (typical values at
5 MHz)
-- 200 nA Automatic Sleep mode current
-- 200 nA standby mode current
-- 7 mA read current
-- 15 mA program/erase current
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Flexible sector architecture
-- One 8 Kbyte, two 4 Kbyte, and seven 16 Kbyte
-- Supports full chip erase
-- Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
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Unlock Bypass Mode Program Command
-- Reduces overall programming time when
issuing multiple program command sequences
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Top or bottom boot block configurations
available
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Embedded Algorithms
-- Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
-- Embedded Program algorithm automatically
writes and verifies data at specified addresses
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Minimum 1,000,000 write cycle guarantee per
sector
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Package option
-- 32-pin TSOP
-- 32-pin PLCC
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Compatibility with JEDEC standards
-- Pinout and software compatible with single-
power supply Flash
-- Superior inadvertent write protection
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Data# Polling and toggle bits
-- Provides a software method of detecting
program or erase operation completion
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Erase Suspend/Erase Resume
-- Supports reading data from or programming
data to a sector that is not being erased
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Hardware reset pin (RESET#)
-- Hardware method for resetting the device to
reading array data
Am29LV001B
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P R E L I M I N A R Y
GENERAL DESCRIPTION
The Am29LV001B is a 1 Mbit, 3.0 Volt-only Flash
memory device organized as 131,072 bytes. The
Am29LV001B has a boot sector architecture.
The device is offered in 32-pin PLCC and 32-pin TSOP
packages. The byte-wide (x8) data appears on DQ7
DQ0. All read, erase, and program operations are
accomplished using only a single power supply. The
device can also be programmed in standard EPROM
programmers.
The standard Am29LV001B offers access times of 45,
55, 70, and 90 ns, allowing high speed microproces-
sors to operate without wait states. To eliminate bus
contention, the device has separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
The device requires only a single power supply (2.7
V3.6V) for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The Am29LV001B is entirely command set compatible
w it h t h e J E D E C s i n g l e - p ow e r-s u p p ly F l a s h
standard. Commands are written to the command reg-
ister using standard microprocessor write timings. Reg-
ister contents serve as input to an internal state-
machine that controls the erase and programming cir-
cuitry. Write cycles also internally latch addresses and
data needed for the programming and erase opera-
tions. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm--an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm--an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When ad-
dresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD's Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tun-
neling. The data is programmed using hot electron
injection.
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