High Speed InGaAs p
-
i
-
n Photodiode
13PD100-S
The 13PD100-S, an InGaAs photodiode with a 100
m-diameter photosensitive region
mounted on a metallized ceramic substrate, is the largest standard device enabling a 1 GHz
frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise
performance. Reliability is assured by a 100% purge burn-in (200
o
C, 15 hours, V
r
= 20V).
Chips can be attached and wire bonded to standard submounts, customer-supplied submounts
or other specified packages.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics
Parameters
Test Conditions
Min
Typ
Max Units
Operating Voltage
-
-
-
-20
Volts
Dark Current
-5V
-
0.5 2
nA
Capacitance
-5V
-
0.9 -
pF
Responsivity
1300nm
0.80
0.9 -
A/W
1500nm
- 1.0 -
A/W
Rise/Fall
-
-
-
0.5
ns
Frequency Response (-3dB)
-
1.0 -
GHz
Absolute Maximum Ratings
Reverse Voltage
30 Volts
Forward Current
5 mA
Reverse Current
500
A
Operating Temperature
-40
o
C to + 85
o
C
Storage Temperature
-40
o
C to + 85
o
C
Soldering Temperature
250
o
C
829 Flynn Road, Camarillo, CA 93012 tel (805) 445-4500 fax (805) 445-4502.
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