12/2002
AWS5524
0.5 to 2.5 GHz SP4T Switch
ADVANCED PRODUCT INFORMATION - Rev 0.1
D1
Die
FEATURES
Low Insertion Loss: 0.8 dB at 2 GHz
High Isolation: > 25 dB
Low Harmonic Levels: < -65 dBc at max. GSM
power
Low Control Voltage Operation: to +2.5 V
APPLICATIONS
Front-end Modules for GSM Wireless Handsets
PRODUCT DESCRIPTION
The AWS5524 is a single pole, four throw (SP4T)
RF switch developed to meet the stringent
requirements of GSM systems. Manufactured in
ANADIGICS' state-of-the-art pHEMT process, the
device uses patent-pending circuit topologies to
Figure 1: Block Diagram
provide the low insertion loss, high port-to-port
isolation and high linearity needed to enhance the
performance of GSM radios. The AWS5524 is offered
as an unpackaged MMIC die.
RFC
RF3G
RF4
VS
V1
RF2G
RF2
RF3
V3
V4
RF4G
V2
RF1
RF1G
2
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5524
Figure 2: Die Configuration
Table 1: Pad Description
E
M
A
N
N
O
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T
P
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C
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1
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1
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1
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R
Dimensions in m
Bond Pads: 100 m x 75 m
Die Thickness: 178 m
RF4
RFC
RF1
RF2
RF3
RF4G
RF1G
RF2G
RF3G
V4
V1
V2
VS
V3
1500
1225
Dimensions in m
Bondpads 100 x 75m
75
371
596
850
1075
306
73
5
103
6
1333
1425
736
306
1150
907
671
546
310
75
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5524
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation
is not implied under these conditions. Exposure to absolute ratings for extended periods of
time may adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
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A
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)
1
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2
.
0
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.
8
+
V
V
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.
8
+
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P
(
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w
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)
2
(
5
6
-
0
5
1
+
C
Notes:
(1) The VS port may remain open-circuited without damage to the device.
(2) Storage Temperature limits apply to the die only after it has been removed from the ANADIGICS
shipping material.
3. All RF ports should be AC-coupled. No external DC bias should be applied.
R
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T
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3
-
-
5
8
+
o
C
Notes:
(1) For optimal linearity performance, the Common Port Bias Voltage (V
S
) should be set to the same Control Voltage
used to turn ON any of the individual RF paths. The VS port may remain open-circuited without damage to the
device, but with some degradation in linearity.
4
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5524
Table 4: Electrical Specifications
(T
A
= +25
C; RF ports terminated with 50
; V
n
= +2.7 V and is the Control Voltage for the ON path,
RFC - RFn; V
x
= 0 V and is the Control Voltage for the OFF paths, RFC - RFx)
R
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T
E
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A
R
A
P
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1
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H
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2
-
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5
.
0
8
.
0
7
.
0
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1
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1
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6
6
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9
5
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d
4
3
+
=
P
N
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B
d
2
3
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3
)
3
(
z
H
G
1
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G
2
-
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8
8
-
0
8
-
5
6
-
5
6
-
c
B
d
t
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p
n
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l
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R
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m
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d
4
3
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=
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d
2
3
+
=
n
o
it
p
m
u
s
n
o
C
t
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r
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C
-
-
-
-
0
3
5
A
A
t
r
o
p
n
V
h
c
a
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r
o
p
S
V
Notes:
(1) Isolated RFx ports have a return loss of approximately -3 dB.
(2) For the Cellular Band, two tones with P
IN
= +22.5 dBm each, at 837 and 838 MHz. For the PCS Band, two tones
with P
IN
= +21 dBm each, at 1880 and 1881 MHz.
(3) V
S
= V
n
Table 5: Switch Control Truth Table
V
1
+2.5 to +3.5 V
0 to +0.2 V
0 to +0.2 V
0 to +0.2 V
V
2
0 to +0.2 V
+2.5 to +3.5 V
0 to +0.2 V
0 to +0.2 V
V
3
0 to +0.2 V
0 to +0.2 V
+2.5 to +3.5 V
0 to +0.2 V
V
4
0 to +0.2 V
0 to +0.2 V
0 to +0.2 V
+2.5 to +3.5 V
RFC - RF1
ON
OFF
OFF
OFF
RFC - RF2
OFF
ON
OFF
OFF
RFC - RF3
OFF
OFF
ON
OFF
RFC - RF4
OFF
OFF
OFF
ON
CONTROL
VOLTAGES
RF PATH
SELECTION
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5524
5
PERFORMANCE DATA
Figure 4: Harmonics of 1 GHz vs. Control Voltage
(ON path, V = 0 V, f = 1 GHz, P = +34 dBm)
x
IN
-100
-90
-80
-70
-60
-50
-40
-30
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
Control Voltage (V)
Har
m
oni
c
L
evel
(
dBc)
2nd Harmonic, Vs open
2nd Harmonic, Vs = Vn
3rd Harmonic, Vs open
3rd Harmonic, Vs = Vn
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
500
1000
1500
2000
2500
Frequency (MHz)
Insertion
Loss
(dB)
Figure 3: Insertion Loss vs. Frequency
(ON path, V = +2.7 V, V = 0 V)
n
x
Figure 5: Return Loss vs. Frequency
(ON path, V = +2.7 V, V = 0 V)
n
x
-40
-30
-20
-10
0
500
1000
1500
2000
2500
Frequency (MHz)
Ret
u
r
n
Loss
(
dB)
RFC port
RFn port
Figure 6: Harmonics of 2 GHz vs. Control Voltage
(ON path, V = 0 V, f = 2 GHz, P = +32 dBm)
x
IN
-100
-90
-80
-70
-60
-50
-40
-30
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
Control Voltage (V)
Har
m
oni
c
L
evel
(
dBc)
2nd Harmonic, Vs open
2nd Harmonic, Vs = Vn
3rd Harmonic, Vs open
3rd Harmonic, Vs = Vn
Figure 7: Isolation vs. Frequency
(OFF path, V = +2.7 V, V = 0 V)
n
x
-40
-30
-20
-10
0
500
1000
1500
2000
2500
Frequency (MHz)
Is
o
l
a
t
io
n
(
d
B
)
6
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5524
Die Applications
Bonding and circuit connections for the unpackaged
AWS5524 die are shown in Figure 8, and application
details are listed in the following notes:
1. Cb are DC blocking capacitors external to the
device. A value of 100 pF is sufficient for operation
to 500 MHz. The values may be tailored to provide
specific electrical responses. The isolation of the
switch provides enough decoupling of RF ports 1
through 4 so that overall switch performance is not
affected.
2. The VS pin provides a fixed voltage potential to
the common port of the switch. To get the best linear
performance, it should be tied to the logic high
voltage potential (not the power supply). Current
draw on this pin is less than 5
A.
3. The RF Ground bondwires should be kept as
short as possible and bonded directly to a good RF
ground for best broadband performance.
4. L
ESD
provides a means to increase the ESD
protection on a specific RF port, typically the port
attached to the antenna. The ESD rating of the device
is 125 V HBM overall. This rating is associated
with the control pin to RF port path. RF port to RF
port/RF Gnd has been determined to be >500 V
HBM for this technology. By using L
ESD
as an RF
choke on a port, an ESD protection to 8 kV contact
discharge can be achieved.
5. The die may be attached by either conductive or
non-conductive epoxy formulated for attaching
semiconductor parts. The back of the die is
electrically isolated from the switch circuit and can
be grounded or left isolated.
Figure 8: Application Schematic
Control Pin, RF Path 2
RF Gnd, Path 1 Shunt
RF Port 4
Common
Port Supply
Note 2 (Logic high)
C
b
Control Pin, RF Path 1
RFC
RF3G
RF4
VS
V1
RF2G
RF2
RF3
V3
V4
RF4G
V2
RF1
RF1G
Control Pin, RF Path 4
Control Pin, RF Path 3
RF Gnd, Path 2 Shunt
Keep RF Gnd Bondwires Short
4 Places, Note 3
RF Port 1
C
b
C
b
RF Port 2
RF Port 3
RF Gnd, Path 3 Shunt
RF Gnd, Path 4 Shunt
Common (Ant.) RF Port
L
ESD
Note 4
C
b
C
b
APPLICATION INFORMATION
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5524
7
NOTES
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
8
AWS5524
ORDERING INFORMATION
R
E
B
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A
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4
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