09/2005
AWS5532R
0.5 to 2.5 GHz 10 W SPDT Switch
PRELIMINARY DATA SHEET - Rev 1.3
S26 Package
12 Pin 3 mm x 3 mm x 1 mm QFN
Figure 1: Block Diagram
PRODUCT DESCRIPTION
The AWS5532R is a single pole, double throw
(SPDT) RF switch developed for applications
requiring very low distortion at high input drive levels.
Manufactured in ANADIGICS's state-of-the-art pHEMT
process, the device uses patented circuit topologies
to provide low insertion loss, high port-to-port
isolation, and high linearity performance. The
AWS5532R is offered in a 12-lead 3 mm x 3 mm x 1 mm
QFN package.
FEATURES
Low Insertion Loss: 0.4 dB at 2 GHz
High Isolation: >25 dB
High Input P0.1 dB: +40.5 dBm
Low Control Voltage Operation
Low Profile Surface Mount Package
RoHS Compliant Package, 260
o
C MSL-1
APPLICATIONS
Automotive Telematic Applications
GSM Wireless Handsets and Front-end
Modules
CDMA Wireless Handsets and Front-end
Modules
RF1
RF2
GND
V2
RFC
VS
11
9
8
7
6
5
4
3
2
1
12
10
NC
NC
NC
V1
NC
GND
AW
S5532R
AW
S553
2R
2
PRELIMINARY DATA SHEET - Rev 1.3
09/2005
AWS5532R
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
Notes:
(1) Pins 1, 5, 9 and 12 are not connected in the package.
Recommend pins be grounded, but is not necessary.
1
3
2
7
8
9
4
6
5
10
12
11
NC
GND
RF1
RF2
GND
NC
NC
V1
V2
RFC
NC
VS
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
2
1
F
R
1
h
t
a
P
,t
r
o
P
F
R
4
1
V
1
h
t
a
P
F
R
,
e
g
a
tl
o
V
l
o
r
t
n
o
C
6
2
V
2
h
t
a
P
F
R
,
e
g
a
tl
o
V
l
o
r
t
n
o
C
8
2
F
R
2
h
t
a
P
,t
r
o
P
F
R
0
1
S
V
s
a
i
B
t
r
o
P
n
o
m
m
o
C
)
h
g
i
h
c
i
g
o
l(
e
g
a
tl
o
V
1
1
C
F
R
t
r
o
P
n
o
m
m
o
C
F
R
7
,
3
D
N
G
d
n
u
o
r
G
2
1
,
9
,
5
,
1
C
N
n
o
it
c
e
n
n
o
C
o
N
)
1
(
PRELIMINARY DATA SHEET - Rev 1.3
09/2005
AWS5532R
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
s
e
g
a
tl
o
V
l
o
r
t
n
o
C
1
V
,
2
V
,
S
)
)
1
(
-
0
.
0
1
+
V
P
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
)
2
(
-
5
1
W
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
5
6
-
0
5
1
+
C
Notes:
(1) V
S
port may remain open without damage to the device.
(2) at RF1, RF2, and RFC
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
)f
(
y
c
n
e
u
q
e
r
F
F
R
5
.
0
-
5
.
2
z
H
G
V
(
e
g
a
tl
o
V
s
a
i
B
tr
o
P
n
o
m
m
o
C
s
)
-
)
1
(
-
-
)
0
1
n
i
P
(
tr
o
p
S
V
t
a
d
e
il
p
p
a
V
(
s
e
g
a
tl
o
V
l
o
rt
n
o
C
1
V
,
2
)
2
.
0
-
5
.
2
+
-
-
2
.
0
+
5
+
V
e
t
a
t
s
F
F
O
h
t
a
p
F
R
e
t
a
t
s
N
O
h
t
a
p
F
R
T
(
e
r
u
t
a
r
e
p
m
e
T
t
n
e
i
b
m
A
A
)
0
4
-
-
5
8
+
o
C
Notes:
(1) The Common Port Bias Voltage (Vs) is not required for normal operation, and can be left open. To operate the
switch in an "all off" state (both V1 and V2 set to logic LOW), the logic HIGH voltage should be applied to this
port. Under no circumstances should this port be grounded.
4
PRELIMINARY DATA SHEET - Rev 1.3
09/2005
AWS5532R
Notes:
(1) Tested in conformance with JEDEC specification JESD22-C101-A
(2) A CDM ESD threshold of this voltage classifies the device as a Class IV component per JEDEC JESD22-C101-A
(3) Tested in conformance with ESD/EOS Society specification STM5.1-2001
(4) A HBM ESD threshold at these voltages classifies the device as a Class 1A component per ESD/EOS Society
Specification STM5.1-2001
(5) This test was done in conformance with ESD/EOS Society HBM specification STM5.1-2001. 3000 ESD strikes
were applied using multiple groups of 100 strikes each where the interval between strikes within a group is 1
second and the interval between groups is 30 seconds.
(6) This voltage rating REQUIRES the use of an inductor as an RF choke as defined in Note #3 in the application
circuit information. This rating has been tested with inductor values of 47nH and 100nH.
Table 4: ESD Ratings
R
E
T
E
M
A
R
A
P
D
O
H
T
E
M
G
N
I
T
A
R
T
I
N
U
)
s
n
i
P
ll
A
(
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
D
S
E
M
D
C
)
1
(
0
0
0
1
)
2
(
V
)
y
l
n
o
s
n
i
p
y
l
p
p
u
S
(
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
)
3
(
0
0
4
)
4
(
V
)
s
n
i
p
l
a
n
g
i
S
-
y
l
p
p
u
S
(
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
0
0
4
V
)
y
l
n
o
s
n
i
p
l
a
n
g
i
S
F
R
(
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
0
5
4
V
)
t
r
o
P
n
o
m
m
o
C
a
n
n
e
t
n
A
(
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
)
5
(
0
0
0
2
1
)
6
(
V
PRELIMINARY DATA SHEET - Rev 1.3
09/2005
AWS5532R
5
Table 5: Electrical Specifications
(T
A
= +25
O
C, RF ports terminated with 50
, V
n
= +3.0 V and is the Control Voltage for the ON path, RFC-
RFn; V
X
= 0 V and is the Control Voltage for the other OFF path, RFC-RFx)
Notes:
(1) Isolated RFx ports have a return loss of approximately -3 dB.
(2) Two tones with PIN = +27 dBm each, 1 MHz channel spacing.
Table 6: Switch Control Truth Table
E
G
A
T
L
O
V
L
O
R
T
N
O
C
N
O
I
T
C
E
L
E
S
H
T
A
P
F
R
V
1
V
2
1
F
R
-
C
F
R
2
F
R
-
C
F
R
V
5
+
o
t
5
.
2
+
V
2
.
0
+
o
t
2
.
0
-
N
O
F
F
O
V
2
.
0
+
o
t
2
.
0
-
V
5
+
o
t
5
.
2
+
F
F
O
N
O
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
s
s
o
L
n
o
it
r
e
s
n
I
z
H
G
1
z
H
G
2
-
-
0
3
.
0
0
4
.
0
5
.
0
6
.
0
B
d
t
r
o
p
n
F
R
d
e
t
c
e
l
e
s
o
t
t
r
o
p
C
F
R
s
s
o
L
n
r
u
t
e
R
)
1
(
z
H
G
1
z
H
G
2
-
-
4
2
2
2
0
2
8
1
B
d
t
r
o
p
n
F
R
d
e
t
c
e
l
e
s
d
n
a
t
r
o
p
C
F
R
n
o
it
a
l
o
s
I
z
H
G
1
z
H
G
2
7
2
5
2
0
3
7
2
-
-
B
d
t
r
o
p
x
F
R
d
e
t
a
l
o
s
i
o
t
t
r
o
p
C
F
R
t
p
e
c
r
e
t
n
I
r
e
d
r
O
d
r
i
h
T
t
u
p
n
I
)
2
(
z
H
M
9
4
8
-
4
2
8
8
6
+
1
7
+
-
m
B
d
t
r
o
p
n
F
R
d
e
t
c
e
l
e
s
o
t
t
r
o
p
C
F
R
B
d
1
.
0
r
o
f
r
e
w
o
P
t
u
p
n
I
n
o
i
s
s
e
r
p
m
o
C
z
H
M
9
4
8
-
4
2
8
9
3
+
5
.
0
4
+
-
m
B
d
n
o
it
p
m
u
s
n
o
C
t
n
e
r
r
u
C
-
-
0
5
mA
t
r
o
p
n
V
h
c
a
e
PDF 
ZIP