12/2002
AWT6113
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.4
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
FEATURES
InGaP HBT Technology
High Efficiency: 38%
Low Quiescent Current: 44 mA
Low Leakage Current in Shutdown Mode: <1
A
Optimized for a 50
System
Low Profile Surface Mount Package: 1.56mm max
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6113 is a high power, high efficiency
amplifier module for PCS/CDMA wireless handset
applications. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and
a shutdown mode with low leakage current, serve to
increase handset talk and standby time. The
self-contained 4mm x 4mm surface mount package
incorporates matching networks optimized for output
power, efficiency and linearity in a 50
system.
Figure 1: Block Diagram
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
PRELIMINARY DATA SHEET - Rev 1.4
12/2002
AWT6113
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
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4
PRELIMINARY DATA SHEET - Rev 1.4
12/2002
AWT6113
Table 4: Electrical Specifications - High Bias Mode
(T
C
= +25 C, V
CC
= +3.4 V, V
REF
= +2.85 V, V
MODE
= 0 V, P
OUT
= +28 dBm, 50
system)
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Notes:
(1) PAE and ACP limit applies to 1880 MHz.
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