01/2005
PRODUCT DESCRIPTION
As with previous generations, the AWT6166
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6166 input and output terminals are internal
matched to 50 ohms and DC blocked, reducing the
AWT6166
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.3
18 Pin
6 mm x 6 mm x 1.3 mm
Amplifier Module
FEATURES
Integrated Vreg (regulated supply)
Harmonic Performance
-25 dBm
High Efficiency (PAE) at Pmax:
-GSM850, 54%
-GSM900, 56%
-DCS, 53%
-PCS, 51%
+35 dBm GSM850/900 Output Power at 3.5 V
+33 dBm DCS/PCS Output Power at 3.5 V
55 dB dynamic range
GPRS Class 12 Capable
APPLICATIONS
Dual/Tri/Quad Band Handsets & PDAs
CMOS BIAS/Integrated Power Control
V
CC2
H(s)
V
CC2
DCS/PCS
IN
GSM850/900
IN
GSM850/900
OUT
DCS/PCS
OUT
V
CC_OUT
B
S
TX
EN
V
BATT
C
EXT
V
RAMP
MATCH
MATCH
MATCH
MATCH
number of external components required in the final
application. Both PA die, GSM850/900 and DCS/
PCS, are fabricated using state of the art InGaP HBT
technology, known for it is proven reliability and
temperature stability.
Figure 1: Block Diagram
2
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
Table 1: Pin Description
Figure 2: Pinout (X- ray Top View)
VC
C
2
DCS/PCS_IN
BS
T _EN
X
VBATT
VRAMP
GSM_IN
DCS/PCS_OUT
GSM_OUT
VCC_OUT
18
1
9
8
7
2
3
4
5
6
10
16
11
13
15
12
14
17
VC
C
2
CEXT
GND
GND
GND
GND
GND
GND
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
1
N
I
_
S
C
P
/
S
C
D
t
u
p
n
I
F
R
S
C
P
/
S
C
D
0
1
T
U
O
_
M
S
G
t
u
p
t
u
O
F
R
0
0
9
/
0
5
8
M
S
G
2
S
B
t
u
p
n
I
c
i
g
o
L
t
c
e
l
e
S
d
n
a
B
1
1
D
N
G
d
n
u
o
r
G
3
N
E
_
x
T
t
u
p
n
I
c
i
g
o
L
e
l
b
a
n
E
X
T
2
1
D
N
G
d
n
u
o
r
G
4
V
T
T
A
B
y
l
p
p
u
S
y
r
e
tt
a
B
n
o
it
c
e
n
n
o
C
3
1
V
T
U
O
_
C
C
t
u
p
t
u
O
e
g
a
tl
o
V
l
o
r
t
n
o
C
d
e
t
c
e
n
n
o
c
e
b
t
s
u
m
h
c
i
h
w
V
o
t
2
C
C
5
C
T
X
E
s
s
a
p
y
B
4
1
D
N
G
d
n
u
o
r
G
6
V
P
M
A
R
o
t
d
e
s
u
l
a
n
g
i
S
g
o
l
a
n
A
r
e
w
o
p
t
u
p
t
u
o
e
h
t
l
o
r
t
n
o
c
5
1
D
N
G
d
n
u
o
r
G
7
N
I
_
M
S
G
t
u
p
n
I
F
R
0
0
9
/
0
5
8
M
S
G
6
1
T
U
O
_
S
C
P
/
S
C
D
t
u
p
t
u
O
F
R
S
C
P
/
S
C
D
8
V
2
C
C
r
o
f
t
u
p
n
I
l
o
r
t
n
o
C
C
C
V
0
0
9
/
0
5
8
M
S
G
r
e
if
il
p
m
a
-
e
r
P
7
1
D
N
G
d
n
u
o
r
G
9
D
N
G
d
n
u
o
r
G
8
1
V
2
C
C
V
C
C
r
o
f
t
u
p
n
I
l
o
r
t
n
o
C
S
C
P
/
S
C
D
r
e
if
il
p
m
a
-
e
r
P
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
3
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Although protection circuitry has been designed into this device, proper precau-
tions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500
,
capacitance = 100 pF.
Table 3: ESD Ratings
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
t
l
o
V
y
l
p
p
u
S
T
T
A
B
)
-
7
+
V
F
R
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
1
1
m
B
d
V
(
s
e
g
a
t
l
o
V
l
o
r
t
n
o
C
P
M
A
R
)
3
.
0
-
8
.
1
V
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
5
5
-
0
5
1
C
Table 5: Control Logic Table
Table 4: Digital Inputs
E
D
O
M
N
E
_
x
T
S
B
e
l
b
a
n
E
A
P
H
G
I
H
X
e
d
o
M
0
0
9
/
0
5
8
M
S
G
H
G
I
H
W
O
L
e
d
o
M
S
C
P
/
S
C
D
H
G
I
H
H
G
I
H
e
l
b
a
s
i
D
A
P
W
O
L
X
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
h
g
i
H
c
i
g
o
L
H
I
)
2
.
1
-
0
.
3
V
V
(
e
g
a
tl
o
V
w
o
L
c
i
g
o
L
L
I
)
-
-
5
.
0
V
I
(
t
n
e
r
r
u
C
h
g
i
H
c
i
g
o
L
H
I
)
-
-
0
3
A
I
(
t
n
e
r
r
u
C
w
o
L
c
i
g
o
L
L
I
)
-
-
0
3
A
R
E
T
E
M
A
R
A
P
D
O
H
T
E
M
G
N
I
T
A
R
T
I
N
U
)
s
t
r
o
p
F
R
(
e
g
a
tl
o
v
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
)
s
t
u
p
n
i
l
o
r
t
n
o
c
(
e
g
a
tl
o
v
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
4
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
Table 6: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
2
-
-
5
8
C
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
T
T
A
B
)
0
.
3
5
.
3
8
.
4
V
t
n
e
r
r
u
C
e
g
a
k
a
e
L
y
l
p
p
u
S
r
e
w
o
P
-
1
0
1
A
V
T
T
A
B
,
V
8
.
4
=
V
P
M
A
R
,
V
0
=
,
W
O
L
=
N
E
_
X
T
d
e
il
p
p
a
F
R
o
N
e
g
n
a
R
e
g
a
tl
o
V
l
o
r
t
n
o
C
2
.
0
-
6
.
1
V
T
(
e
m
it
n
o
n
r
u
T
N
O
)
-
-
1
s
V
P
M
A
R
=
N
E
_
X
T
,
V
2
.
0
=
W
O
L
h
g
i
H
P
N
I
m
B
d
5
=
T
(
e
m
it
ff
o
n
r
u
T
F
F
O
)
-
-
1
s
V
P
M
A
R
=
N
E
_
X
T
,
V
2
.
0
=
H
G
I
H
W
O
L
P
N
I
m
B
d
5
=
T
(
e
m
i
T
e
s
i
R
E
S
I
R
)
-
-
1
s
P
T
U
O
m
B
d
0
1
-
=
P
X
A
M
)
B
d
2
.
0
n
i
h
ti
w
(
T
(
e
m
i
T
ll
a
F
L
L
A
F
)
-
-
1
s
P
T
U
O
P
=
X
A
M
m
B
d
0
1
-
)
B
d
2
.
0
n
i
h
ti
w
(
V
P
M
A
R
e
c
n
a
ti
c
a
p
a
C
t
u
p
n
I
-
3
-
F
p
V
P
M
A
R
t
n
e
r
r
u
C
t
u
p
n
I
-
-
0
1
A
e
l
c
y
C
y
t
u
D
-
-
0
5
%
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
5
Table 7: Electrical Characteristics for GSM850
(V
BATT
= 3.5 V, P
IN
= 3.0 dBm, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25 C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
F
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
o
)
4
2
8
-
9
4
8
z
H
M
r
e
w
o
P
t
u
p
n
I
0
0
.
3
5
m
B
d
P
,r
e
w
o
P
t
u
p
t
u
O
X
A
M
5
.
4
3
0
.
5
3
-
m
B
d
z
H
M
9
4
8
o
t
4
2
8
=
q
e
r
F
r
e
w
o
P
t
u
p
t
u
O
d
e
d
a
r
g
e
D
5
.
2
3
5
.
3
3
-
m
B
d
V
T
T
A
B
T
,
V
0
.
3
=
C
5
8
=
O
,
C
P
N
I
m
B
d
0
=
P
@
E
A
P
X
A
M
-
4
5
-
%
z
H
M
9
4
8
o
t
4
2
8
=
q
e
r
F
1
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
5
3
-
-
m
B
d
V
,
W
O
L
=
N
E
_
X
T
P
M
A
R
V
2
.
0
=
P
N
I
,
m
B
d
5
=
2
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
5
2
-
-
m
B
d
V
,
H
G
I
H
=
N
E
_
X
T
P
M
A
R
,
V
2
.
0
=
P
N
I
m
B
d
5
=
n
o
it
a
l
o
s
I
s
s
o
r
C
F
2
(
o
)
t
r
o
P
S
C
P
/
S
C
D
@
-
0
3
-
-
m
B
d
V
P
M
A
R
V
6
.
1
o
t
V
2
.
0
=
s
c
i
n
o
m
r
a
H
o
f
2
F
*
n
o
n
(
,
>
o
F
,
)
3
[
z
H
G
5
7
.
2
1
-
-
5
2
-
0
3
-
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
y
ti
li
b
a
t
S
P
,
s
e
s
a
h
P
ll
A
1
:
8
=
R
W
S
V
T
U
O
[
m
B
d
5
.
4
3
-
-
6
3
-
m
B
d
F
T
U
O
z
H
G
1
<
-
-
0
3
-
m
B
d
F
T
U
O
z
H
G
1
>
s
s
e
n
d
e
g
g
u
R
-
-
1
:
0
1
R
W
S
V
,
s
e
s
a
h
p
d
a
o
l
ll
A
P
T
U
O
m
B
d
5
.
4
3
<
r
e
w
o
P
e
s
i
o
N
X
R
-
7
8
-
-
m
B
d
F
X
T
,
z
H
M
9
4
8
=
,
z
H
k
0
0
1
=
W
B
R
F
X
R
,
z
H
M
4
9
8
o
t
9
6
8
=
P
T
U
O
[
m
B
d
5
.
4
3
R
W
S
V
t
u
p
n
I
-
1
:
5
.
1
-
-
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
6
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
Table 8: Electrical Characteristics for GSM900
(V
BATT
= 3.5 V
,
P
IN
= 3.0 dBm, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25 C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
F
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
o
)
0
8
8
-
5
1
9
z
H
M
r
e
w
o
P
t
u
p
n
I
0
0
.
3
5
m
B
d
P
,r
e
w
o
P
t
u
p
t
u
O
X
A
M
5
.
4
3
0
.
5
3
-
m
B
d
z
H
M
5
1
9
o
t
0
8
8
=
q
e
r
F
r
e
w
o
P
t
u
p
t
u
O
d
e
d
a
r
g
e
D
5
.
2
3
5
.
3
3
-
m
B
d
V
T
T
A
B
T
,
V
0
.
3
=
C
5
8
=
O
,
C
P
N
I
m
B
d
0
=
P
@
E
A
P
X
A
M
-
6
5
-
%
z
H
M
5
1
9
o
t
0
8
8
=
q
e
r
F
1
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
5
3
-
-
m
B
d
V
,
W
O
L
=
N
E
_
X
T
P
M
A
R
V
2
.
0
=
P
N
I
,
m
B
d
5
=
2
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
5
2
-
-
m
B
d
V
,
H
G
I
H
=
N
E
_
X
T
P
M
A
R
,
V
2
.
0
=
P
N
I
m
B
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O
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
7
Table 9: Electrical Characteristics for DCS
(V
BATT
= 3.5 V, P
IN
= 3.0 dBm, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25 C, V
RAMP
= 1.6 V, BS = HIGH, TX_EN = HIGH)
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8
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
Table 10: Electrical Characteristics for PCS
(V
BATT
= 3.5 V, P
IN
= 3.0 dBm, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25 C, V
RAMP
= 1.6 V, BS = HIGH, TX_EN = HIGH)
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O
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
9
Figure 3: Application Schematic
APPLICATION INFORMATION
GSM850/900 RF OUTPUT
GSM850/900 RF INPUT
1
2
3
4
5
6
7
16
15
14
13
12
11
10
8
9
18
17
DCS/PCS_PIN
BS
TX_EN
VBAT
T
CEXT
VRAMP
GSM_IN
V
CC2
V
CC2
GN
D
GN
D
GND
GND
GSM_OUT
VCC_OUT
GND
GND
DCS/PCS_OUT
AWT6166
DCS/PCS RF INPUT
BAND SELECT
TX ENABLE
DAC OUTPUT
DCS/PCS RF OUTPUT
BATTERY
VOLTAGE
10K
*
27pF*
* Filtering may be required to filter noise from baseband.
** This component should be placed as close to the device pin as possible.
++ These components are recommended as good design practice for improving noise
rejection characteristics. The values specified are not critical as they may not be required in the
final application.
2.7pF
**
47uF
++
22nF
**
1nF
++
1nF
++
1nF
**
10
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
PACKAGE OUTLINE
Figure 4: Package Outline
Figure 5: Branding Specification
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
11
NOTES
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
12
AWT6166
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