06/2005
PRODUCT DESCRIPTION
As with previous generations, the AWT6167R
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6167R input and output terminals are
internal matched to 50 ohms and DC blocked,
AWT6167R
GSM900/DCS
Dual Band Power Amplifier Module
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
M15 Package
18 Pin 6 mm x 6 mm x 1.3 mm
Amplifier Module
FEATURES
Integrated Vreg (regulated supply)
Harmonic Performance
-20 dBm
High Efficiency (PAE) at Pmax:
-GSM900, 55%
-DCS, 53%
+35 dBm GSM900 Output Power at 3.5 V
+33 dBm DCS Output Power at 3.5 V
55 dB Dynamic Range
GPRS Class 12 Capable
RoHS Compliant Package, 250C MSL-3
APPLICATIONS
Dual/Tri/Quad Band Handsets & PDAs
reducing the number of external components
required in the final application. Both PA die, GSM900
and DCS, are fabricated using state of the art InGaP
HBT technology, known for it is proven reliability and
temperature stability.
Figure 1: Block Diagram
H(s)
MATCH
MATCH
MATCH
MATCH
V
CC2
V
CC_OUT
DCS
_OUT
V
CC2
GSM900
_OUT
GSM900
_IN
DCS
_IN
V
RAMP
C
EXT
TX_
EN
V
BATT
B
S
CMOS BIAS/Integrated Power Control
AWT6167R
AWT6167R
PRELIMINARY DATA SHEET - Rev 1.0
06/2005
AWT6167R
3
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Although protection circuitry has been designed into this device, proper precau-
tions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500
,
capacitance = 100 pF.
Table 3: ESD Ratings
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
t
l
o
V
y
l
p
p
u
S
T
T
A
B
)
-
7
+
V
F
R
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
1
1
m
B
d
V
(
s
e
g
a
t
l
o
V
l
o
r
t
n
o
C
P
M
A
R
)
3
.
0
-
8
.
1
V
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
5
5
-
0
5
1
C
Table 5: Control Logic Table
Table 4: Digital Inputs
R
E
T
E
M
A
R
A
P
D
O
H
T
E
M
G
N
I
T
A
R
T
I
N
U
)
s
t
r
o
p
F
R
(
e
g
a
tl
o
v
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
)
s
t
u
p
n
i
l
o
r
t
n
o
c
(
e
g
a
tl
o
v
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
V
(
e
g
a
t
l
o
V
h
g
i
H
c
i
g
o
L
H
I
)
2
.
1
-
0
.
3
V
V
(
e
g
a
t
l
o
V
w
o
L
c
i
g
o
L
L
I
)
-
-
5
.
0
V
I
(
t
n
e
r
r
u
C
h
g
i
H
c
i
g
o
L
H
I
)
-
-
0
3
A
I
(
t
n
e
r
r
u
C
w
o
L
c
i
g
o
L
L
I
)
-
-
0
3
A
E
D
O
M
N
E
_
x
T
S
B
e
l
b
a
n
E
A
P
H
G
I
H
X
e
d
o
M
0
0
9
M
S
G
H
G
I
H
W
O
L
e
d
o
M
S
C
D
H
G
I
H
H
G
I
H
e
l
b
a
s
i
D
A
P
W
O
L
X
4
PRELIMINARY DATA SHEET - Rev 1.0
06/2005
AWT6167R
Table 6: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
2
-
-
5
8
C
V
(
e
g
a
t
l
o
V
y
l
p
p
u
S
T
T
A
B
)
0
.
3
5
.
3
8
.
4
V
t
n
e
r
r
u
C
e
g
a
k
a
e
L
y
l
p
p
u
S
r
e
w
o
P
-
1
0
1
A
V
T
T
A
B
,
V
8
.
4
=
V
P
M
A
R
,
V
0
=
,
W
O
L
=
N
E
_
X
T
d
e
il
p
p
a
F
R
o
N
e
g
n
a
R
e
g
a
t
l
o
V
l
o
r
t
n
o
C
2
.
0
-
6
.
1
V
T
(
e
m
i
t
n
o
n
r
u
T
N
O
)
-
-
1
s
V
P
M
A
R
=
N
E
_
X
T
,
V
2
.
0
=
W
O
L
h
g
i
H
P
N
I
m
B
d
5
=
T
(
e
m
i
t
f
f
o
n
r
u
T
F
F
O
)
-
-
1
s
V
P
M
A
R
=
N
E
_
X
T
,
V
2
.
0
=
H
G
I
H
W
O
L
P
N
I
m
B
d
5
=
T
(
e
m
i
T
e
s
i
R
E
S
I
R
)
-
-
1
s
P
T
U
O
m
B
d
0
1
-
=
P
X
A
M
)
B
d
2
.
0
n
i
h
t
i
w
(
T
(
e
m
i
T
ll
a
F
L
L
A
F
)
-
-
1
s
P
T
U
O
P
=
X
A
M
m
B
d
0
1
-
)
B
d
2
.
0
n
i
h
t
i
w
(
V
P
M
A
R
e
c
n
a
t
i
c
a
p
a
C
t
u
p
n
I
-
3
-
F
p
V
P
M
A
R
t
n
e
r
r
u
C
t
u
p
n
I
-
-
0
1
A
e
l
c
y
C
y
t
u
D
-
-
0
5
%
PRELIMINARY DATA SHEET - Rev 1.0
06/2005
AWT6167R
5
Table 7: Electrical Characteristics for GSM900
Unless otherwise stated (V
BATT
= 3.5 V
,
P
IN
= 3.0 dBm, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25 C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
F
(
y
c
n
e
u
q
e
r
F
g
n
i
t
a
r
e
p
O
O
)
0
8
8
-
5
1
9
z
H
M
r
e
w
o
P
t
u
p
n
I
0
0
.
3
5
m
B
d
P
,
r
e
w
o
P
t
u
p
t
u
O
X
A
M
5
.
4
3
0
.
5
3
-
m
B
d
z
H
M
5
1
9
o
t
0
8
8
=
q
e
r
F
r
e
w
o
P
t
u
p
t
u
O
d
e
d
a
r
g
e
D
5
.
2
3
5
.
3
3
-
m
B
d
V
T
T
A
B
T
,
V
0
.
3
=
C
,
C
5
8
=
P
N
I
m
B
d
0
=
P
@
E
A
P
X
A
M
0
5
5
5
-
%
z
H
M
5
1
9
o
t
0
8
8
=
q
e
r
F
1
n
o
i
t
a
l
o
s
I
d
r
a
w
r
o
F
-
8
3
-
3
3
-
m
B
d
V
,
W
O
L
=
N
E
_
X
T
P
M
A
R
V
2
.
0
=
P
N
I
m
B
d
5
=
2
n
o
i
t
a
l
o
s
I
d
r
a
w
r
o
F
-
5
2
-
0
2
-
m
B
d
V
,
H
G
I
H
=
N
E
_
X
T
P
M
A
R
,
V
2
.
0
=
P
N
I
m
B
d
5
=
n
o
i
t
a
l
o
s
I
s
s
o
r
C
o
t
o
f
3
d
n
a
o
f
2
M
S
G
f
o
g
n
il
p
u
o
C
(
)
t
r
o
p
S
C
P
/
S
C
D
-
3
2
-
7
1
-
m
B
d
P
T
U
O
m
B
d
5
.
4
3
s
c
i
n
o
m
r
a
H
o
f
3
,
o
f
2
F
*
n
O
n
(
,
F
,
)
4
O
z
H
G
5
7
.
2
1
-
-
2
2
-
0
3
-
0
1
-
0
1
-
m
B
d
P
T
U
O
m
B
d
5
.
4
3
P
,
s
e
s
a
h
P
ll
A
1
:
8
=
R
W
S
V
T
U
O
m
B
d
5
.
4
3
y
t
il
i
b
a
t
S
-
-
6
3
-
m
B
d
F
T
U
O
<
z
H
G
1
-
-
0
3
-
m
B
d
F
T
U
O
>
z
H
G
1
s
s
e
n
d
e
g
g
u
R
-
-
1
:
0
1
R
W
S
V
,
s
e
s
a
h
p
d
a
o
l
ll
A
P
T
U
O
m
B
d
5
.
4
3
r
e
w
o
P
e
s
i
o
N
X
R
-
4
8
-
7
7
-
m
B
d
F
X
T
,
z
H
M
5
1
9
=
,
z
H
k
0
0
1
=
W
B
R
F
X
R
,
z
H
M
5
3
9
o
t
5
2
9
=
P
T
U
O
m
B
d
5
.
4
3
-
7
8
-
3
8
-
m
B
d
F
X
T
,
z
H
M
5
1
9
=
,
z
H
k
0
0
1
=
W
B
R
F
X
R
,
z
H
M
0
6
9
o
t
5
3
9
=
P
T
U
O
m
B
d
5
.
4
3
R
W
S
V
t
u
p
n
I
-
1
:
5
.
1
1
:
5
.
2
-
P
T
U
O
m
B
d
5
.
4
3
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