01/2005
Figure 1: Block Diagram
FEATURES
Internal Reference Voltage
Integrated Power Control Scheme
InGaP HBT Technology
ESD Protection on All Pins (2.5 kV)
Low profile 1.3 mm
Small Package Outline 7 mm x 7 mm
EGPRS Capable (class 12)
GMSK MODE
Integrated power control (CMOS)
+35 dBm GSM850/900 Output Power
+33 dBm DCS/PCS Output Power
55 % GSM850/900 PAE
50 % DCS/PCS PAE
Power control range > 50 dB
EDGE MODE
+30.5 dBm GSM850/900 Output Power
+29.5 dBm DCS/PCS Output Power
25 % GSM850/900 PAE
25 % DCS/PCS PAE
APPLICATIONS
GSM850/GSM900/DCS/PCS Handsets
Dual/Tri/Quad Band PDA
GMSK and 8-PSK Polar Modulation
Schemes
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using a polar architecture. There are
two amplifier chains, one to support GSM850/900
bands, the other for DCS/PCS bands.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the num-
ber of external components required to complete a
power control function. The amplifier's power con-
trol range is typically 55 dB, with the output power set
by applying an analog voltage to V
RAMP
.
All of the RF ports for this device are internally
matched to 50
. Internal DC blocks are provided at
the RF inputs.
AWT6168
GSM/GPRS/Polar EDGE Power Amplifier
Module with Integrated Power Control
ADVANCED PRODUCT INFORMATION - REV 0.1
GSM850/900_IN
T
X
_EN
DCS/PCS_IN
GSM850/900_OUT
GSM850/900
Bias/Power
Control
DCS/PCS_OUT
DCS/PCS
BS
V
RAMP
V
BATT
C
EXT
2
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
Table 1: Pin Description
Figure 2: Pinout (X - ray Top View)
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
1
N
I
_
S
C
P
/
S
C
D
t
u
p
n
I
F
R
S
C
P
/
S
C
D
0
1
T
U
O
_
M
S
G
t
u
p
t
u
O
F
R
0
0
9
/
0
5
8
M
S
G
2
S
B
t
u
p
n
I
c
i
g
o
L
t
c
e
l
e
S
d
n
a
B
1
1
D
N
G
d
n
u
o
r
G
3
N
E
_
X
T
t
u
p
n
I
c
i
g
o
L
e
l
b
a
n
E
X
T
2
1
D
N
G
d
n
u
o
r
G
4
V
T
T
A
B
y
l
p
p
u
S
y
r
e
tt
a
B
n
o
it
c
e
n
n
o
C
3
1
T
U
O
_
C
C
V
t
u
p
t
u
O
e
g
a
tl
o
V
l
o
r
t
n
o
C
d
e
t
c
e
n
n
o
c
e
b
t
s
u
m
h
c
i
h
w
V
o
t
2
C
C
g
n
il
p
u
o
c
e
d
o
n
,
5
C
T
X
E
s
s
a
p
y
B
4
1
D
N
G
d
n
u
o
r
G
6
V
P
M
A
R
o
t
d
e
s
u
l
a
n
g
i
S
g
o
l
a
n
A
r
e
w
o
p
t
u
p
t
u
o
e
h
t
l
o
r
t
n
o
c
5
1
D
N
G
d
n
u
o
r
G
7
N
I
_
M
S
G
t
u
p
n
I
F
R
0
0
9
/
0
5
8
M
S
G
6
1
T
U
O
_
S
C
P
/
S
C
D
t
u
p
t
u
O
F
R
S
C
P
/
S
C
D
8
V
2
C
C
r
o
f
t
u
p
n
I
l
o
r
t
n
o
C
C
C
V
0
0
9
/
0
5
8
M
S
G
r
e
if
il
p
m
a
-
e
r
P
7
1
D
N
G
d
n
u
o
r
G
9
D
N
G
d
n
u
o
r
G
8
1
V
2
C
C
V
C
C
r
o
f
t
u
p
n
I
l
o
r
t
n
o
C
S
C
P
/
S
C
D
r
e
if
il
p
m
a
-
e
r
P
V
CC2
DCS/PCS_IN
BS
T _EN
X
V
BATT
V
RAMP
GSM_IN
DCS/PCS_OUT
GSM_OUT
VCC_OUT
18
1
9
8
7
2
3
4
5
6
10
16
11
13
15
12
14
17
C
EXT
GND
GND
GND
GND
GND
GND
V
CC2
3
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
Although protection circuitry has been designed into this device, proper precau-
tions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500
,
capacitance = 100pF.
Table 3: ESD Ratings
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
S
T
I
N
U
(
e
g
a
tl
o
V
y
l
p
p
u
S
V
T
T
A
B
)
-
7
+
V
(
r
e
w
o
P
t
u
p
n
I
F
R
F
R
N
I
)
-
1
1
m
B
d
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
V
P
M
A
R
)
3
.
0
-
8
.
1
V
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
T
G
T
S
)
5
5
-
0
5
1
C
R
E
T
E
M
A
R
A
P
D
O
H
T
E
M
G
N
I
T
A
R
T
I
N
U
)
s
t
r
o
p
F
R
(
e
g
a
tl
o
v
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
)
s
t
u
p
n
i
l
o
r
t
n
o
c
(
e
g
a
tl
o
v
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
4
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
Table 5: Digital Inputs
Table 6: Logic Control Table
R
E
T
E
M
A
R
A
P
L
O
B
M
Y
S
N
I
M
P
Y
T
X
A
M
S
T
I
N
U
e
g
a
tl
o
V
h
g
i
H
c
i
g
o
L
V
H
I
2
.
1
-
0
.
3
V
e
g
a
tl
o
V
w
o
L
c
i
g
o
L
V
L
I
-
-
5
.
0
V
t
n
e
r
r
u
C
h
g
i
H
c
i
g
o
L
I|
IH
|
-
-
0
3
mA
t
n
e
r
r
u
C
w
o
L
c
i
g
o
L
I|
IL
|
-
-
0
3
mA
E
D
O
M
L
A
N
O
I
T
A
R
E
P
O
S
B
N
E
_
X
T
0
0
9
/
0
5
8
M
S
G
W
O
L
H
G
I
H
S
C
P
/
S
C
D
H
G
I
H
H
G
I
H
D
E
L
B
A
S
I
D
A
P
-
W
O
L
Table 4: Operating Conditions
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
S
T
I
N
U
S
T
N
E
M
M
O
C
(
e
r
u
t
a
r
e
p
m
e
t
e
s
a
C
T
C
)
0
2
-
-
5
8
C
(
e
g
a
tl
o
v
y
l
p
p
u
S
V
T
T
A
B
)
0
.
3
5
.
3
8
.
4
V
t
n
e
r
r
u
c
e
g
a
k
a
e
l
y
l
p
p
u
s
r
e
w
o
P
-
1
5
mA
V
T
T
A
B
V
,
V
8
.
4
=
P
M
A
R
,
V
0
=
W
O
L
=
N
E
_
X
T
d
e
il
p
p
a
F
R
o
N
e
g
n
a
R
e
g
a
tl
o
V
l
o
r
t
n
o
C
2
.
0
-
6
.
1
V
(
e
m
i
T
n
o
n
r
u
T
T
N
O
)
-
-
1
ms
V
P
M
A
R
W
O
L
=
N
E
_
X
T
,
V
2
.
0
=
Y
H
G
I
H
P
N
I
m
B
d
5
=
(
e
m
i
T
ff
O
n
r
u
T
T
F
F
O
)
-
-
1
ms
V
P
M
A
R
W
O
L
=
N
E
_
X
T
,
V
2
.
0
=
Y
H
G
I
H
P
N
I
m
B
d
5
=
(
e
m
i
T
e
s
i
R
T
E
S
I
R
)
-
-
1
ms
P
T
U
O
m
B
d
0
1
-
=
Y P
X
A
M
)
B
d
2
.
0
n
i
h
ti
w
(
(
e
m
i
T
ll
a
F
T
L
L
A
F
)
-
-
1
ms
P
T
U
O
P
=
X
A
M
Y
)
B
d
2
.
0
n
i
h
ti
w
(
m
B
d
0
1
-
V
P
M
A
R
e
c
n
a
ti
c
a
p
a
C
t
u
p
n
I
-
3
-
F
p
V
P
M
A
R
t
n
e
r
r
u
C
t
u
p
n
I
-
-
0
1
mA
e
l
c
y
C
y
t
u
D
-
-
0
5
%
5
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
Table 7: Electrical Characteristics for GSM850/900 GMSK mode
Unless otherwise specified: V
BATT
= 3.5 V, P
IN
= 5 dBm, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25 C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH, MODE = LOW
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
(
F
o )
4
2
8
0
8
8
-
-
9
4
8
5
1
9
z
H
M
r
e
w
o
P
t
u
p
n
I
3
5
8
m
B
d
P
,r
e
w
o
P
t
u
p
t
u
O
X
A
M
5
.
4
3
5
3
-
m
B
d
z
H
M
5
1
9
o
t
4
2
8
=
q
e
r
F
r
e
w
o
P
t
u
p
t
u
O
d
e
d
a
r
g
e
D
0
.
2
3
5
.
2
3
-
m
B
d
V
T
T
A
B
T
,
V
0
.
3
=
C
C
5
8
=
P
N
I
m
B
d
3
=
P
@
E
A
P
X
A
M
-
5
5
-
%
z
H
M
5
1
9
o
t
4
2
8
=
q
e
r
F
1
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
7
3
-
-
m
B
d
P
,
W
O
L
=
N
E
_
X
T
N
I
m
B
d
8
=
2
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
5
2
-
-
m
B
d
V
,
H
G
I
H
=
N
E
_
X
T
P
M
A
R
P
,
V
2
.
0
=
N
I
m
B
d
8
=
n
o
it
a
l
o
s
I
s
s
o
r
C
F
2
(
o
)
t
r
o
p
S
C
P
/
S
C
D
@
-
5
2
-
-
m
B
d
V
P
M
A
R
V
o
t
V
2
.
0
=
X
A
M
_
P
M
A
R
c
i
n
o
m
r
a
H
d
n
o
c
e
S
-
0
2
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
c
i
n
o
m
r
a
H
d
r
i
h
T
-
0
3
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
y
ti
li
b
a
t
S
P
,
s
e
s
a
h
P
ll
A
1
:
8
=
R
W
S
V
T
U
O
<
m
B
d
5
.
4
3
-
-
6
3
-
m
B
d
F
T
U
O
z
H
G
1
<
-
-
0
3
-
m
B
d
F
T
U
O
z
H
G
1
>
s
s
e
n
d
e
g
g
u
R
1
:
0
1
-
-
-
s
e
s
a
h
P
d
a
o
L
ll
A
r
e
w
o
P
e
s
i
o
N
X
R
-
6
8
-
-
m
B
d
F
X
T
z
H
k
0
0
1
=
W
B
R
,
z
H
M
9
4
8
=
F
X
R
P
,
z
H
M
4
9
8
o
t
9
6
8
=
T
U
O
<
m
B
d
5
.
4
3
-
0
8
-
-
m
B
d
F
X
T
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
5
1
9
=
F
X
R
P
,
z
H
M
5
3
9
o
t
5
2
9
=
T
U
O
<
m
B
d
5
.
4
3
-
6
8
-
-
m
B
d
F
X
T
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
5
1
9
=
F
X
R
P
,
z
H
M
0
6
9
o
t
5
3
9
=
T
U
O
<
m
B
d
5
.
4
3
s
s
o
L
n
r
u
t
e
R
t
u
p
n
I
-
-
1
:
5
.
2
R
W
S
V
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
6
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
Table 8: Electrical Characteristics for GSM850/900 EDGE mode
Unless otherwise specified: V
BATT
= 3.5 V, P
IN
= 5 dBm, V
RAMP
= 1.6 V, Pulse Width =1154
s, Duty 25% Z
IN
= Z
OUT
= 50
, T
C
= 25 C, BS = LOW, TX_EN = HIGH, MODE = HIGH
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
(
F
o )
4
2
8
0
8
8
-
-
9
4
8
5
1
9
z
H
M
m
B
d
5
.
0
3
@
E
A
P
-
5
2
-
%
e
g
n
a
R
c
i
m
a
n
y
D
-
5
5
-
B
d
V
P
M
A
R
V
6
.
1
o
t
V
2
.
0
=
e
p
o
l
S
n
i
a
G
-
-
0
0
3
V
/
B
d
P
T
U
O
/
m
B
d
5
e
s
a
h
P
1
2
S
/
M
P
-
M
A
n
o
it
a
i
v
e
D
-
-
-
-
-
-
-
9
3
.
2
8
7
.
2
4
3
.
3
9
8
.
2
4
7
.
1
4
8
.
1
9
4
.
2
-
-
-
-
-
-
-
B
d
/
g
e
d
m
B
d
5
<
m
B
d
5
+
m
B
d
0
1
+
m
B
d
5
1
+
m
B
d
0
2
+
m
B
d
5
2
+
m
B
d
0
3
+
n
o
it
a
l
o
s
I
s
s
o
r
C
F
2
(
o
)
t
r
o
p
S
C
P
/
S
C
D
@
-
5
2
-
-
m
B
d
c
i
n
o
m
r
a
H
d
n
o
c
e
S
-
0
2
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
c
i
n
o
m
r
a
H
d
r
i
h
T
-
0
3
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
y
ti
li
b
a
t
S
P
,
s
e
s
a
h
P
ll
A
1
:
8
=
R
W
S
V
T
U
O
<
m
B
d
5
.
0
3
-
-
6
3
-
m
B
d
F
T
U
O
z
H
G
1
<
-
-
0
3
-
m
B
d
F
T
U
O
z
H
G
1
>
r
e
w
o
P
e
s
i
o
N
X
R
-
6
8
-
-
m
B
d
F
X
T
z
H
k
0
0
1
=
W
B
R
,
z
H
M
9
4
8
=
F
X
R
P
,
z
H
M
4
9
8
o
t
9
6
8
=
T
U
O
<
m
B
d
5
.
0
3
-
0
8
-
-
m
B
d
F
X
T
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
5
1
9
=
F
X
R
P
,
z
H
M
5
3
9
o
t
5
2
9
=
T
U
O
<
m
B
d
5
.
0
3
-
6
8
-
-
m
B
d
F
X
T
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
5
1
9
=
F
X
R
P
,
z
H
M
0
6
9
o
t
5
3
9
=
T
U
O
<
m
B
d
5
.
0
3
s
s
o
L
n
r
u
t
e
R
t
u
p
n
I
-
-
1
:
5
.
2
R
W
S
V
7
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
Table 9: Electrical Characteristics for DCS/PCS GMSK mode
Unless otherwise specified: V
BATT
= 3.5 V, P
IN
= 5 dBm, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25 C, V
RAMP
= 1.6 V, BS = HIGH, TX_EN = HIGH, MODE =LOW
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
0
1
7
1
0
5
8
1
-
-
5
8
7
1
0
1
9
1
z
H
M
r
e
w
o
P
t
u
p
n
I
3
5
8
m
B
d
P
,r
e
w
o
P
t
u
p
t
u
O
X
A
M
2
3
3
3
-
m
B
d
r
e
w
o
P
t
u
p
t
u
O
d
e
d
a
r
g
e
D
5
.
9
2
5
.
0
3
-
m
B
d
V
T
T
A
B
T
,
V
0
.
3
=
C
C
5
8
=
P
N
I
m
B
d
3
=
P
@
E
A
P
X
A
M
-
0
5
-
%
z
H
M
0
1
9
1
o
t
0
1
7
1
=
q
e
r
F
1
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
7
3
-
-
m
B
d
P
,
W
O
L
=
N
E
_
X
T
N
I
m
B
d
8
=
2
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
7
1
-
-
m
B
d
V
,
H
G
I
H
=
N
E
_
X
T
P
M
A
R
,
V
2
.
0
=
P
N
I
m
B
d
8
=
c
i
n
o
m
r
a
H
d
n
o
c
e
S
-
0
2
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
c
i
n
o
m
r
a
H
d
r
i
h
T
-
0
3
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
y
ti
li
b
a
t
S
P
,
s
e
s
a
h
P
ll
A
1
:
8
=
R
W
S
V
T
U
O
<
m
B
d
2
3
-
-
6
3
-
m
B
d
F
T
U
O
z
H
G
1
<
-
-
0
3
-
m
B
d
F
T
U
O
z
H
G
1
>
s
s
e
n
d
e
g
g
u
R
1
:
0
1
-
-
-
s
e
s
a
h
P
d
a
o
L
ll
A
r
e
w
o
P
e
s
i
o
N
X
R
-
0
8
-
-
m
B
d
F
X
T
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
5
8
7
1
=
F
X
R
P
,
z
H
M
0
8
8
1
o
t
5
0
8
1
=
T
U
O
<
m
B
d
2
3
-
0
8
-
-
m
B
d
F
X
T
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
0
1
9
1
=
F
X
R
P
,
z
H
M
0
9
9
1
o
t
0
3
9
1
=
T
U
O
<
m
B
d
2
3
s
s
o
L
n
r
u
t
e
R
t
u
p
n
I
-
-
1
:
5
.
2
R
W
S
V
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
8
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
Table 10: Electrical Characteristics for DCS/PCS EDGE mode
Unless otherwise specified: V
BATT
= 3.5 V, P
IN
= 5 dBm, V
RAMP
= 1.6 V, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, TC = 25 C , BS =HIGH, TX_EN = HIGH, MODE = HIGH
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
(
F
o )
0
1
7
1
0
5
8
1
-
-
5
8
7
1
0
1
9
1
z
H
M
m
B
d
5
.
9
2
@
E
A
P
-
5
2
-
%
e
g
n
a
R
c
i
m
a
n
y
D
-
0
5
-
B
d
V
P
M
A
R
V
6
.
1
o
t
V
2
.
0
=
e
p
o
l
S
n
i
a
G
-
-
0
0
3
V
/
B
d
P
T
U
O
/
m
B
d
0
e
s
a
h
P
1
2
S
/
M
P
-
M
A
n
o
it
a
i
v
e
D
-
-
-
-
-
-
-
-
2
9
.
1
5
6
.
1
4
5
.
2
1
3
.
2
6
6
.
1
1
6
.
1
3
0
.
1
2
9
.
0
-
-
-
-
-
-
-
-
B
d
/
g
e
d
m
B
d
0
<
m
B
d
0
m
B
d
5
+
m
B
d
0
1
+
m
B
d
5
1
+
m
B
d
0
2
+
m
B
d
5
2
+
m
B
d
8
2
+
c
i
n
o
m
r
a
H
d
n
o
c
e
S
-
0
2
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
c
i
n
o
m
r
a
H
d
r
i
h
T
-
0
3
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
y
ti
li
b
a
t
S
P
,
s
e
s
a
h
P
ll
A
1
:
8
=
R
W
S
V
T
U
O
<
m
B
d
5
.
9
2
-
-
6
3
-
m
B
d
F
T
U
O
z
H
G
1
<
-
-
0
3
-
m
B
d
F
T
U
O
z
H
G
1
>
r
e
w
o
P
e
s
i
o
N
X
R
-
0
8
-
-
m
B
d
F
X
T
z
H
k
0
0
1
=
W
B
R
,
z
H
M
5
8
7
1
=
F
X
R
P
,
z
H
M
0
8
8
1
o
t
5
0
8
1
=
T
U
O
<
m
B
d
5
.
9
2
-
0
8
-
-
m
B
d
F
X
T
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
0
1
9
1
=
F
X
R
P
,
z
H
M
0
9
9
1
o
t
0
3
9
1
=
T
U
O
<
m
B
d
5
.
9
2
s
s
o
L
n
r
u
t
e
R
t
u
p
n
I
-
-
1
:
5
.
2
R
W
S
V
9
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
APPLICATION INFORMATION
GSM850/900 RF OUTPUT
GSM850/900 RF INPUT
1
2
3
4
5
6
7
16
15
14
13
12
11
10
8
9
18
17
DCS/PCS_PIN
BS
TX_EN
VBAT
T
CEXT
VRAMP
GSM_IN
V
CC2
V
CC2
GN
D
GN
D
GND
GND
GSM_OUT
VCC_OUT
GND
GND
DCS/PCS_OUT
AWT6168
DCS/PCS RF INPUT
BAND SELECT
TX ENABLE
DAC OUTPUT
DCS/PCS RF OUTPUT
BATTERY
VOLTAGE
10K
*
27pF*
* Filtering may be required to filter noise from baseband.
** This component should be placed as close to the device pin as possible.
++ These components are recommended as good design practice for improving noise
rejection characteristics. The values specified are not critical as they may not be required in the
final application.
2.7pF
**
47uF
++
22nF
**
1nF
++
1nF
++
56pF
**
Figure 3: Recommended Application Circuit
10
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
PACKAGE OUTLINE
Figure 3: Package Outline
11
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
NOTES
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
12
AWT6168
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
PDF 
ZIP