07/2005
AWT6275
HELP
TM
IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.8
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
Figure 1: Block Diagram
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.5 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
system.
FEATURES
InGaP HBT Technology
High Efficiency:
43% @ P
OUT
= +27.5 dBm
21% @ P
OUT
= +16 dBm
15% @ P
OUT
= +7 dBm
Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode: <1
A
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package
Option: 1.1 mm Max
RoHS Compliant Package, 250
o
C MSL-3
HSDPA Capable
APPLICATIONS
Dual Band WCDMA Wireless Handsets
Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6275 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
AWT6275
2
PRELIMINARY DATA SHEET - Rev 1.8
07/2005
AWT6275
V
CC
RF
OUT
V
REF
RF
IN
V
MODE
GND
1
GND
10
2
3
4
5
6
9
8
7
V
CC
GND
GND
GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
1
V
C
C
e
g
a
tl
o
V
y
l
p
p
u
S
2
F
R
N
I
t
u
p
n
I
F
R
3
D
N
G
d
n
u
o
r
G
4
V
E
D
O
M
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
5
V
F
E
R
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
6
D
N
G
d
n
u
o
r
G
7
D
N
G
d
n
u
o
r
G
8
F
R
T
U
O
t
u
p
t
u
O
F
R
9
D
N
G
d
n
u
o
r
G
0
1
V
C
C
e
g
a
tl
o
V
y
l
p
p
u
S
PRELIMINARY DATA SHEET - Rev 1.8
07/2005
AWT6275
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
0
5
+
V
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
0
5
.
3
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
0
5
.
3
+
V
P
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
0
1
+
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
0
4
-
0
5
1
+
C
Notes:
(1) For operation at V
CC
= +3.2 V, P
OUT
is derated by 0.5 dB.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
)
f
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
0
2
9
1
-
0
8
9
1
z
H
M
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
2
.
3
+
-
4
.
3
+
5
.
1
+
2
.
4
+
-
V
P
T
U
O
<
m
B
d
5
.
7
2
+
P
T
U
O
<
m
B
d
7
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
5
7
.
2
+
0
5
8
.
2
+
-
5
9
.
2
+
5
.
0
+
V
"
n
o
"
A
P
"
n
w
o
d
t
u
h
s
"
A
P
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
3
.
2
+
0
5
8
.
2
+
-
1
.
3
+
5
.
0
+
V
e
d
o
M
s
a
i
B
w
o
L
e
d
o
M
s
a
i
B
h
g
i
H
P
(
r
e
w
o
P
t
u
p
t
u
O
F
R
T
U
O
)
0
.
7
2
+
)
1
(
5
.
7
2
+
-
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
2
-
-
0
9
+
C
4
PRELIMINARY DATA SHEET - Rev 1.8
07/2005
AWT6275
Table 4: Electrical Specifications
(T
C
= +25 C, V
CC
= +3.4 V, V
REF
= +2.85 V, 50
system)
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
n
i
a
G
5
.
4
2
5
.
3
1
2
1
5
.
6
2
5
.
5
1
4
1
9
2
5
.
7
1
6
1
B
d
P
T
U
O
V
,
m
B
d
5
.
7
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
5
8
.
2
+
=
P
T
U
O
V
,
m
B
d
7
+
=
C
C
,
V
5
.
1
=
V
E
D
O
M
V
5
8
.
2
+
=
t
e
s
ff
o
z
H
M
5
t
a
1
R
L
C
A
)
1
(
-
-
-
1
4
-
3
4
-
0
4
-
8
3
-
8
3
-
8
3
-
c
B
d
P
T
U
O
V
,
m
B
d
5
.
7
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
5
8
.
2
+
=
P
T
U
O
V
,
m
B
d
7
+
=
C
C
,
V
5
.
1
=
V
E
D
O
M
V
5
8
.
2
+
=
t
e
s
ff
o
z
H
M
0
1
t
a
2
R
L
C
A
-
-
-
8
5
-
2
5
-
7
5
-
8
4
-
8
4
-
8
4
-
c
B
d
P
T
U
O
V
,
m
B
d
5
.
7
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
5
8
.
2
+
=
P
T
U
O
V
,
m
B
d
7
+
=
C
C
,
V
5
.
1
=
V
E
D
O
M
V
5
8
.
2
+
=
y
c
n
e
i
c
if
f
E
d
e
d
d
A
-
r
e
w
o
P
)
1
(
9
3
8
1
2
1
3
4
1
2
5
1
-
-
-
%
P
T
U
O
V
,
m
B
d
5
.
7
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
5
8
.
2
+
=
P
T
U
O
V
,
m
B
d
7
+
=
C
C
,
V
5
.
1
=
V
E
D
O
M
V
5
8
.
2
+
=
)
q
c
I
(
t
n
e
r
r
u
C
t
n
e
c
s
e
i
u
Q
-
6
1
2
2
A
m
V
E
D
O
M
V
,
V
5
8
.
2
+
=
C
C
V
4
.
3
=
t
n
e
r
r
u
C
e
c
n
e
r
e
f
e
R
-
6
.
3
5
A
m
V
h
g
u
o
r
h
t
F
E
R
n
i
p
t
n
e
r
r
u
C
l
o
r
t
n
o
C
e
d
o
M
-
3
.
0
1
A
m
V
h
g
u
o
r
h
t
E
D
O
M
V
,
n
i
p
E
D
O
M
V
5
8
.
2
+
=
t
n
e
r
r
u
C
e
g
a
k
a
e
L
-
1
<
5
A
V
C
C
V
,
V
2
.
4
+
=
F
E
R
,
V
0
=
V
E
D
O
M
V
0
=
d
n
a
B
e
v
i
e
c
e
R
n
i
e
s
i
o
N
-
1
4
1
-
8
3
1
-
z
H
/
m
B
d
z
H
M
0
7
1
2
o
t
z
H
M
0
1
1
2
s
c
i
n
o
m
r
a
H
o
f
2
o
f
4
,
o
f
3
-
-
5
4
-
0
5
-
0
4
-
5
4
-
c
B
d
P
T
U
O
<
m
B
d
5
.
7
2
+
e
c
n
a
d
e
p
m
I
t
u
p
n
I
-
-
1
:
2
R
W
S
V
l
e
v
e
L
t
u
p
t
u
O
s
u
o
ir
u
p
S
)
s
t
u
p
t
u
o
s
u
o
ir
u
p
s
ll
a
(
-
-
0
7
-
c
B
d
P
T
U
O
<
m
B
d
5
.
7
2
+
1
:
5
<
R
W
S
V
d
a
o
l
d
n
a
b
-
n
I
1
:
0
1
<
R
W
S
V
d
a
o
l
d
n
a
b
-
f
o
-
t
u
O
g
n
it
a
r
e
p
o
ll
a
r
e
v
o
s
e
il
p
p
A
s
n
o
it
i
d
n
o
c
o
n
h
ti
w
s
s
e
r
t
s
h
c
t
a
m
s
i
m
d
a
o
L
e
r
u
li
a
f
r
o
n
o
it
a
d
a
r
g
e
d
t
n
e
n
a
m
r
e
p
1
:
0
1
-
-
R
W
S
V
e
g
n
a
r
g
n
it
a
r
e
p
o
ll
u
f
r
e
v
o
s
e
il
p
p
A
PRELIMINARY DATA SHEET - Rev 1.8
07/2005
AWT6275
5
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the V
REF
and V
MODE
voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
Table 5: Bias Control
appropriate logic level (see Operating Ranges table)
to the V
MODE
voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
Three operating modes are recommended to
optimize current consumption. High Bias/High V
CC
operating mode is for P
OUT
levels > 16 dBm. At
~16dBm - 7 dBm, the PA should be "Mode Switched"
to Low Bias Mode. For P
OUT
levels < ~7 dBm, the V
CC
can be switched to 1.5 V (Low Bias Mode is also
used for this P
OUT
range).
C3
0.01F
C4
2.2F ceramic
GND
at slug
RF IN
2
9
1
6
7
10
8
5
4
3
V
CC
V
MODE
GND
RF
IN
GND
V
CC
GND
V
REF
GND
RF
OUT
VCC2
C1
0.01F
VCC1
VMODE
VREF
C2
0.01F
RF OUT
Figure 3: Application Circuit Schematic
N
O
I
T
A
C
I
L
P
P
A
P
T
U
O
S
L
E
V
E
L
S
A
I
B
E
D
O
M
V
F
E
R
V
E
D
O
M
V
C
C
r
e
w
o
p
w
o
l
-
A
M
D
C
<
m
B
d
7
+
w
o
L
V
5
8
.
2
+
V
5
8
.
2
+
>
5
.
1
+
r
e
w
o
p
d
e
m
-
A
M
D
C
7 < P
T
U
O
<
m
B
d
6
1
+
w
o
L
V
5
8
.
2
+
V
5
8
.
2
+
4
.
3
+
r
e
w
o
p
h
g
i
h
-
A
M
D
C
m
B
d
6
1
+
>
h
g
i
H
V
5
8
.
2
+
V
0
4
.
3
+
n
w
o
d
t
u
h
S
-
n
w
o
d
t
u
h
S
V
0
V
0
-
PDF 
ZIP