10/2003
AWT6301
Cellular Dual Mode AMPS/CDMA
3.4 V/28 dBm Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.1
M9 Package
8 Pin 3mm x 3mm
Surface Mount Module
FEATURES
InGaP HBT Technology
High Efficiency: 53 % AMPS, 39 % CDMA
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1 mA
V
REF
= +2.85 V (+2.7 V Min Over Temp.)
Optimized for a 50 W System
Low Profile Surface Mount Package: 1.1mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4mm x 4mm Package
APPLICATIONS
Single Mode CDMA Wireless Handsets
Dual Mode AMPS/CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6301 meets the increasing demands for
higher efficiency and linearity in AMPS/CDMA 1X
handsets, while reducing pcb area by 44%. The
package pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, serve to increase handset
talk and standby time. The self contained 3mm x
3mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50 W system.
Figure 1: Block Diagram
Bias Control
V
CC1
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
8
6
GND at slug (pad)
3
4
2
V
CC2
GND
5
ADVANCED PRODUCT INFORMATION - Rev 0.1
10/2003
AWT6301
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
)f
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
4
2
8
-
9
4
8
z
H
M
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
2
.
3
+
4
.
3
+
2
.
4
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
7
.
2
+
0
5
8
.
2
+
-
1
.
3
+
5
.
0
+
V
"
n
o
"
A
P
"
n
w
o
d
t
u
h
s
"
A
P
V
(
e
g
a
tl
o
V
l
o
rt
n
o
C
e
d
o
M
E
D
O
M
)
5
.
2
+
0
8
.
2
+
-
1
.
3
+
5
.
0
+
V
e
d
o
M
s
a
i
B
w
o
L
e
d
o
M
s
a
i
B
h
g
i
H
P
(
r
e
w
o
P
t
u
p
t
u
O
F
R
T
U
O
)
5
.
0
3
)
1
(
5
.
7
2
)
1
(
0
.
1
3
0
.
8
2
-
-
m
B
d
S
P
M
A
A
M
D
C
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
2
-
-
5
8
+
C
Notes:
(1) For operation at T
C
= +85 C and V
CC
= +3.2 V, P
OUT
is derated by 0.5 dB.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
e
v
ir
D
F
R
h
ti
W
y
l
n
O
C
D
0
0
5
+
8
+
V
V
(
e
g
a
tl
o
V
l
o
rt
n
o
C
e
d
o
M
E
D
O
M
)
0
5
.
3
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
0
5
.
3
+
V
P
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
0
1
+
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
0
4
-
0
5
1
+
C
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