General Description
The AAT7361 is a low threshold dual P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-high-
density MOSFET process and space-saving,
small-outline, J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the footprint of a TSOPJW8
package.
Applications
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Features
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max) -3.0A @ 25C
Low On-Resistance:
-- 100m
@ V
GS
= -4.5V
-- 175m
@ V
GS
= -2.5V
Dual TSOPJW-8 Package
D1
D1
D2
D2
S1
G1
S2
G2
Top View
1
2
3
4
8
7
6
5
AAT7361
20V P-Channel Power MOSFET
Absolute Maximum Ratings
T
A
= 25C, unless otherwise noted.
Thermal Characteristics
1
Symbol
Description
Typ
Max
Units
R
JA
Junction-to-Ambient Steady State, One FET On
124
155
C/W
R
JA2
Junction-to-Ambient t<5 Seconds
74
90
C/W
R
JF
Junction-to-Foot
66
80
C/W
P
D
Maximum Power Dissipation
T
A
= 25C
1.4
W
T
A
= 70C
0.9
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
= 150C
1
T
A
= 25C
3.0
T
A
= 70C
2.4
A
I
DM
Pulsed Drain Current
2
9
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.0
T
J
Operating Junction Temperature Range
-55 to 150
C
T
STG
Storage Temperature Range
-55 to 150
C
7361.2005.04.1.0
1
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design;
however, R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300s.
Electrical Characteristics
T
J
= 25C, unless otherwise noted.
Symbol Description
Conditions
Min Typ Max Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250A
-20
V
R
DS(ON)
Drain-Source On-Resistance
1
V
GS
= -4.5V, I
D
= -3.0A
80
100
m
V
GS
= -2.5V, I
D
= -2.3A
140
175
I
D(ON)
On-State Drain Current
1
V
GS
= -4.5V, V
DS
= -5V (pulsed)
-9
A
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= -250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
= 12V, V
DS
= 0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
= 0V, V
DS
= -20V
-1
A
V
GS
= 0V, V
DS
= -16V, T
J
= 70C
2
-5
g
fs
Forward Transconductance
1
V
DS
= -5V, I
D
= -3.0A
5
S
Dynamic Characteristics
2
Q
G
Total Gate Charge
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V
6
Q
GS
Gate-Source Charge
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V
1.3
nC
Q
GD
Gate-Drain Charge
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V
1.7
t
D(ON)
Turn-On Delay
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V, R
G
= 6
7
t
R
Turn-On Rise Time
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V, R
G
= 6
13
ns
t
D(OFF)
Turn-Off Delay
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V, R
G
= 6
15
t
F
Turn-Off Fall Time
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V, R
G
= 6
20
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
1
V
GS
= 0, I
S
= -3.0A
-1.3
V
I
S
Continuous Diode Current
3
-1.0
A
AAT7361
20V P-Channel Power MOSFET
2
7361.2005.04.1.0
1. Pulse test: Pulse Width = 300s.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design;
however, R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Threshold Voltage
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
V
GS(th)
Variance (V)
I
D
= 250A
-50
-25
0
25
50
75
100
125
150
T
J
(C)
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
Normalized R
DS(ON)
On-Resistance vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V
GS
= 4.5V
I
D
= 3A
On-Resistance vs. Gate-to-Source Voltage
0
1
2
3
4
5
V
GS
(V)
0
0.08
0.16
0.24
0.32
0.4
R
DS(ON)
(
)
I
D
= 3A
I
D
(A)
R
DS(ON)
(
)
On-Resistance vs. Drain Current
0
0.1
0.2
0.3
0
1.5
3
4.5
6
7.5
9
V
GS
= 4.5 V
V
GS
= 2.5 V
Transfer Characteristics
V
GS
(V)
I
D
(A)
V
D
= V
G
0
1.5
3
4.5
6
7.5
9
0
1
2
3
4
5
125C
25C
-55C
V
DS
(V)
I
DS
(A)
0
1.5
3
4.5
6
7.5
9
0
0.5
1
1.5
2
2.5
1.5V
2V
2.5V
3.5V
3V
4V
4.5V
5V
Output Characteristics
3
AAT7361
20V P-Channel Power MOSFET
7361.2005.04.1.0
3
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Transient Thermal Response, Junction to Ambient
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Normalized Effective
Transient Thermal Impedance
.5
.2
.1
.02
Single Pulse
.05
Single Pulse Power, Junction To Ambient
Time (s)
Power (
W
)
0
5
10
15
20
25
30
35
40
45
50
0.0001
0.001
0.01
0.1
1
10
100
1000
Capacitance
V
DS
(V)
Capacitance (pF)
C
iss
C
rss
C
oss
0
100
200
300
400
500
600
700
0
5
10
15
20
V
SD
(V)
I
S
(A)
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0 .2
0.4
0 .6
0.8
1
1 .2
T
J
= 150C
T
J
= 25C
Gate Charge
Q
G
, Charge (nC)
V
GS
(V)
0
1
2
3
4
5
0
2
4
6
8
V
D
= 10V
I
D
= 3.0A
AAT7361
20V P-Channel Power MOSFET
4
7361.2005.04.1.0
AAT7361
20V P-Channel Power MOSFET
7361.2005.04.1.0
5
Ordering Information
Package Information
TSOPJW-8
All dimensions in millimeters.
0.65 BSC 0.65 BSC 0.65 BSC
0.325
0.075
2.85
0.20
2.40
0.10
3.025
0.075
0.055
0.045
0.9625
0.0375
1.0175
0.0925
0.010
0.15
0.05
7
0.04 REF
0.45
0.15
2.75
0.25
Package
Marking
1
Part Number (Tape and Reel)
2
TSOPJW-8
JYXYY
AAT7361ITS-T1
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in
BOLD
.
PDF 
ZIP