General Description
The AAT8515 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra-high-density MOS-
FET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
Applications
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Features
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max):
-5.4A @ 25C
Low On-Resistance:
-- 35m
@ V
GS
= -4.5V
-- 60m
@ V
GS
= -2.5V
SC70JW-8 Package
D
D
D
D
S
S
S
G
Top View
1
2
3
4
8
7
6
5
AAT8515
20V P-Channel Power MOSFET
Absolute Maximum Ratings
T
A
= 25C, unless otherwise noted.
Thermal Characteristics
1
Symbol
Description
Typ
Max
Units
R
JA
Junction-to-Ambient Steady State
100
120
C/W
R
JA2
Junction-to-Ambient t<5 Seconds
61
73.5
C/W
R
JF
Junction-to-Foot
33
40
C/W
P
D
Maximum Power Dissipation
T
A
= 25C
1.7
W
T
A
= 70C
1.0
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
= 150C
1
T
A
= 25C
5.4
T
A
= 70C
4.3
A
I
DM
Pulsed Drain Current
2
32
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.5
T
J
Operating Junction Temperature Range
-55 to 150
C
T
STG
Storage Temperature Range
-55 to 150
C
8515.2005.04.1.0
1
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design; however,
R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300s.
Electrical Characteristics
T
J
= 25C, unless otherwise noted.
Symbol Description
Conditions
Min
Typ Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown
V
GS
= 0V, I
D
= -250A
-20
V
Voltage
R
DS(ON)
Drain-Source On-Resistance
1
V
GS
= -4.5V, I
D
= -5.4A
27
35
m
V
GS
= -2.5V, I
D
= -4.1A
46
60
I
D(ON)
On-State Drain Current
1
V
GS
= -4.5V, V
DS
= -5V (pulsed)
-32
A
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= -250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
= 12V, V
DS
= 0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
= 0V, V
DS
= -20V
-1
A
V
GS
= 0V, V
DS
= -16V, T
J
= 70C
2
-5
g
fs
Forward Transconductance
1
V
DS
= -5V, I
D
= -5.4A
12
S
Dynamic Characteristics
2
Q
G
Total Gate Charge
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V
13.6
Q
GS
Gate-Source Charge
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V
2.3
nC
Q
GD
Gate-Drain Charge
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V
5.5
t
D(ON)
Turn-On Delay
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V, R
G
= 6
10
t
R
Turn-On Rise Time
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V, R
G
= 6
37
ns
t
D(OFF)
Turn-Off Delay
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V, R
G
= 6
36
t
F
Turn-Off Fall Time
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V, R
G
= 6
52
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward
V
GS
= 0, I
S
= -5.4A
-1.4
V
Voltage
1
I
S
Continuous Diode Current
3
-1.5
A
AAT8515
20V P-Channel Power MOSFET
2
8515.2005.04.1.0
1. Pulse test: Pulse Width = 300s.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design; however,
R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Threshold Voltage
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
V
GS(th)
Variance (V)
I
D
= 250
A
On-Resistance vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
Normalized R
DS(ON)
V
GS
= 4.5V
I
D
= 6.5A
On-Resistance vs. Gate-to-Source Voltage
0
20
40
60
80
100
120
0
1
2
3
4
5
V
GS
(V)
R
DS(ON)
(m
)
I
D
= 6.5A
On-Resistance vs. Drain Current
0
10
20
30
40
50
60
0
2
4
6
8
10
12
I
D
(A)
R
DS(ON)
(m
)
V
GS
= 2.5 V
V
GS
= 4.5 V
Transfer Characteristics
0
8
16
24
32
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
V
D
=V
G
125
C
25
C
-55
C
Output Characteristics
0
8
16
24
32
0
1
2
3
4
V
DS
(V)
I
DS
(A)
1.5V
2V
3.5V
2.5V
5V
4.5V
4V
3V
AAT8515
20V P-Channel Power MOSFET
8515.2005.04.1.0
3
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Capacitance
0
400
800
1200
1600
2000
0
5
10
15
20
V
DS
(V)
Capacitance (pF)
C
iss
C
oss
C
rss
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(V)
I
S
(A)
T
J
= 150
C
T
J
= 25
C
Gate Charge
0
1
2
3
4
5
0
3
6
9
12
15
Q
G
, Charge (nC)
V
GS
(V)
V
D
=15V
I
D
=6.5A
AAT8515
20V P-Channel Power MOSFET
4
8515.2005.04.1.0
Ordering Information
Package Information
SC70JW-8
All dimensions in millimeters.
0.225
0.075
0.45
0.10
0.05
0.05
2.10
0.30
2.00
0.20
7
3
4
4
1.75
0.10
0.85
0.15
0.15
0.05
1.10 MAX
0.100
2.20
0.20
0.048REF
0.50 BSC 0.50 BSC 0.50 BSC
Package
Marking
1
Part Number (Tape and Reel)
2
SC70JW-8
GTXYY
AAT8515IJS-T1
AAT8515
20V P-Channel Power MOSFET
8515.2005.04.1.0
5
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
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