AAT7157
20V P-Channel Power MOSFET
7157.2004.04.1.0
1
General Description
The AAT7157 low threshold 20V, dual P-Channel
MOSFET is a member of AnalogicTechTM's
TrenchDMOSTM product family. Using an ultra-high
density proprietary TrenchDMOS technology the
AAT7157 is designed for use as a load switch in
battery powered applications and protection in bat-
tery packs.
Applications
Battery Packs
Battery-powered portable equipment
Features
V
DS(MAX)
= -20V
I
D(MAX)
1
= -5.8A @ 25C
Low R
DS(ON)
:
36 m
@ V
GS
= -4.5V
62 m
@ V
GS
= -2.5V
Dual SOP-8L Package
D1
D1
D2
D2
S1
G1
S2
G2
Top View
1
2
3
4
8
7
6
5
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
JA
Typical Junction-to-Ambient steady state
1
100
R
JA2
Maximum Junction-to-Ambient t<10 seconds
1
62.5
C/W
R
JF
Typical Junction-to-Foot
1
35
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
=150C
1
T
A
= 25C
5.8
T
A
= 70C
4.6
A
I
DM
Pulsed Drain Current
2
24
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.5
P
D
Maximum Power Dissipation
1
T
A
= 25C
2.0
W
T
A
= 70C
1.25
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
AAT7157
20V P-Channel Power MOSFET
2
7157.2004.04.1.0
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second
pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design,
however R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 s
Note 3: Guaranteed by design. Not subject to production testing.
Symbol
Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250A
-20
V
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-4.5V, I
D
=-5.8A
29
36
m
V
GS
=-2.5V, I
D
=-4.4A
49
62
I
D(ON)
On-State Drain Current
2
V
GS
=-4.5V, V
DS
=5V (Pulsed)
-24
A
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
=12V, V
DS
=0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=-20V
-1
A
V
GS
=0V, V
DS
=-16V, T
J
=70C
3
-5
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=-5.8A
12
S
Dynamic Characteristics
3
Q
G
Total Gate Charge
V
DS
=-15V, R
D
=2.6
, V
GS
=-4.5V
14
Q
GS
Gate-Source Charge
V
DS
=-15V, R
D
=2.6
, V
GS
=-4.5V
2.3
nC
Q
GD
Gate-Drain Charge
V
DS
=-15V, R
D
=2.6
, V
GS
=-4.5V
5.5
t
D(ON)
Turn-ON Delay
V
DS
=-15V, R
D
=2.6
, V
GS
=-4.5V, R
G
=6
10
t
R
Turn-ON Rise Time
V
DS
=-15V, R
D
=2.6
, V
GS
=-4.5V, R
G
=6
37
ns
t
D(OFF)
Turn-OFF Delay
V
DS
=-15V, R
D
=2.6
, V
GS
=-4.5V, R
G
=6
36
t
F
Turn-OFF Fall Time
V
DS
=-15V, R
D
=2.6
, V
GS
=-4.5V, R
G
=6
52
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=-5.8A
-1.5
V
I
S
Continuous Diode Current
1
-1.5
A
AAT7157
20V P-Channel Power MOSFET
7157.2004.04.1.0
3
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Threshold Voltage
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
V
GS(th)
Variance (V)
I
D
= 250
A
On-Resistance vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
Normalized R
DS(ON)
V
GS
= 4.5V
I
D
= 6.5A
On-Resistance vs. Gate to Source Voltage
0
20
40
60
80
100
120
0
1
2
3
4
5
V
GS
(V)
R
DS(ON)
(m
)
I
D
= 5.8A
On-Resistance vs. Drain Current
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
I
D
(A)
R
DS(ON)
(m
)
V
GS
= 4.5 V
V
GS
= 2.5 V
Transfer Characteristics
0
6
12
18
24
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
V
D
=V
G
25
C
-55
C
125
C
Output Characteristics
0
6
12
18
24
0
0.5
1
1.5
2
2.5
3
V
DS
(V)
I
DS
(A)
1.5V
2V
2.5V
5V
4.5V
4V
3V
3.5V
AAT7157
20V P-Channel Power MOSFET
4
7157.2004.04.1.0
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Capacitance
0
400
800
1200
1600
2000
0
5
10
15
20
V
DS
(V)
Capacitance (pF)
C
iss
C
oss
C
rss
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(V)
I
S
(A)
T
J
= 150
C
T
J
= 25
C
Gate Charge
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
Q
G
, Charge (nC)
V
GS
(V)
V
D
=15V
I
D
=5.8A
Ordering Information
Note: Sample stock is generally held on all part numbers listed in BOLD.
Package Information
SOP-8
All dimensions in millimeters.
0.175
0.075
6.00
0.20
3.90
0.10
1.55
0.20
1.27 BSC
0.42
0.09 8
4.90
0.10
4
4
45
0.375
0.125
0.235
0.045
0.825
0.445
Package
Marking
Part Number (Tape and Reel)
SOP-8
7157
AAT7157IAS-T1
AAT7157
20V P-Channel Power MOSFET
7157.2004.04.1.0
5
AAT7157
20V P-Channel Power MOSFET
6
7157.2004.04.1.0
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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rights, or other intellectual property rights are implied.
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version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
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other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
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