AAT8107
20V P-Channel Power MOSFET
8107.2005.05.1.1
1
General Description
The AAT8107 low threshold 20V, P-channel MOS-
FET is a member of AnalogicTech's TrenchDMOS
product family. Using an ultra-high density propri-
etary TrenchDMOS technology, the AAT8107 is
designed for use as a load switch in battery-pow-
ered applications and protection in battery packs.
Applications
Battery Packs
Battery-Powered Portable Equipment
Features
V
DS(MAX)
= -20V
I
D(MAX)
1
= -6.5A @ 25C
Low R
DS(ON)
:
35m
@ V
GS
= -4.5V
60m
@ V
GS
= -2.5V
SOP-8L Package
D
D
D
D
S
S
S
G
Top View
1
2
3
4
8
7
6
5
Absolute Maximum Ratings
T
A
= 25C, unless otherwise noted.
Thermal Characteristics
Symbol
Description
Value
Units
R
JA
Typical Junction-to-Ambient Steady State
1
80
R
JA2
Maximum Junction-to-Ambient t<10 Seconds
1
50
C/W
R
JF
Typical Junction-to-Foot
1
27
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
=150C
1
T
A
= 25C
6.5
T
A
= 70C
5.2
A
I
DM
Pulsed Drain Current
2
32
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.7
P
D
Maximum Power Dissipation
1
T
A
= 25C
2.5
W
T
A
= 70C
1.6
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design; however,
R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300s.
TrenchDMOS
TM
AAT8107
20V P-Channel Power MOSFET
2
8107.2005.05.1.1
Electrical Characteristics
T
J
= 25C, unless otherwise noted.
Symbol Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown
V
GS
= 0V, I
D
= -250A
-20
V
Voltage
R
DS(ON)
Drain-Source On-Resistance
1
V
GS
= -4.5V, I
D
= -6.5A
27
35
m
V
GS
= -2.5V, I
D
= -5.0A
46
60
I
D(ON)
On-State Drain Current
1
V
GS
= -4.5V, V
DS
= 5V (Pulsed)
-32
A
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= -250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
= 12V, V
DS
= 0V
100
nA
I
DSS
Drain Source Leakage
V
GS
= 0V, V
DS
= -20V
-1
A
Current
V
GS
= 0V, V
DS
= -16V, T
J
= 70C
-5
g
fs
Forward Transconductance
1
V
DS
= -5V, I
D
= -6.5A
12
S
Dynamic Characteristics
2
Q
G
Total Gate Charge
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V
13.6
Q
GS
Gate-Source Charge
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V
2.3
nC
Q
GD
Gate-Drain Charge
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V
5.5
t
D(ON)
Turn-On Delay
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V, R
G
= 6
10
t
R
Turn-On Rise Time
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V, R
G
= 6
35
ns
t
D(OFF)
Turn-Off Delay
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V, R
G
= 6
38
t
F
Turn-Off Fall Time
V
DS
= -15V, R
D
= 2.3
, V
GS
= -4.5V, R
G
= 6
50
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward
V
GS
= 0, I
S
= -6.5A
-1.5
V
Voltage
1
I
S
Continuous Diode Current
3
-1.7
A
1. Pulse test: Pulse Width = 300s.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design; however,
R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Threshold Voltage
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
V
GS(th)
Variance (V)
I
D
= 250
A
On-Resistance vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
Normalized R
DS(ON)
V
GS
= 4.5V
I
D
= 6.5A
On-Resistance vs. Gate-to-Source Voltage
0
20
40
60
80
100
120
0
1
2
3
4
5
V
GS
(V)
R
DS(ON)
(m
)
I
D
= 6.5A
On-Resistance vs. Drain Current
0
10
20
30
40
50
60
0
2
4
6
8
10
12
I
D
(A)
R
DS(ON)
(m
)
V
GS
= 2.5V
V
GS
= 4.5V
Transfer Characteristics
0
8
16
24
32
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
V
D
= V
G
125
C
25
C
-55
C
Output Characteristics
0
8
16
24
32
0
1
2
3
4
V
DS
(V)
I
DS
(A)
1.5V
2V
3.5V
2.5V
5V
4.5V
4V
3V
AAT8107
20V P-Channel Power MOSFET
8107.2005.05.1.1
3
AAT8107
20V P-Channel Power MOSFET
4
8107.2005.05.1.1
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Transient Thermal Response, Junction to Ambient
0.01
0.1
1
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
1E+03
Time (s)
Normalized Effective
Transient Thermal
Impedance
Single Pulse
0.02
0.05
0.1
0.2
0.5
Single Pulse Power, Junction to Ambient
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
Time (s)
Power (W)
Capacitance
0
400
800
1200
1600
2000
0
5
10
15
20
V
DS
(V)
Capacitance (pF)
C
iss
C
oss
C
rss
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(V)
I
S
(A)
T
J
= 150
C
T
J
= 25
C
Gate Charge
0
1
2
3
4
5
0
3
6
9
12
15
Q
G
, Charge (nC)
V
GS
(V)
V
D
= 15V
I
D
= 6.5A
Ordering Information
Package Information
SOP-8
All dimensions in millimeters.
0.175
0.075
6.00
0.20
3.90
0.10
1.55
0.20
1.27 BSC
0.42
0.09
8
4.90
0.10
4
4
45
0.375
0.125
0.235
0.045
0.825
0.445
Package
Marking
Part Number (Tape and Reel)
1
SOP-8
8107
AAT8107IAS-T1
AAT8107
20V P-Channel Power MOSFET
8107.2005.05.1.1
5
1. Sample stock is generally held on all part numbers listed in BOLD.
AAT8107
20V P-Channel Power MOSFET
6
8107.2005.05.1.1
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
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