General Description
The AAT8303 is a low threshold P Channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTechTM's proprietary ultra-
high density Trench technology, and space saving
small outline J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
Applications
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Load Switches
Features
V
DS(MAX)
= -20V
I
D(MAX)
1
= -10A @ 25C
Low R
DS(ON)
:
14 m
@ V
GS
= -4.5V
24 m
@ V
GS
= -2.5V
TSOPJW-8 Package
D
D
D
D
S
S
S
G
Top View
1
2
3
4
8
7
6
5
AAT8303
20V P-Channel Power MOSFET
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Typ
Max
Units
R
JA
Junction-to-Ambient steady state
1
86
105
C/W
R
JA2
Junction-to-Ambient t<5 seconds
1
44
54
C/W
R
JF
Junction-to-Foot
1
27
32
C/W
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
=150C
1
T
A
= 25C
10
T
A
= 70C
8
A
I
DM
Pulsed Drain Current
2
48
I
S
Continuous Source Current (Source-Drain Diode)
1
-2.3
P
D
Maximum Power Dissipation
1
T
A
= 25C
2.3
W
T
A
= 70C
1.5
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
Preliminary Information
8303.2003.09.0.62
1
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design, howev-
er R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 s
Note 3: Guaranteed by design. Not subject to production testing.
Symbol Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250A
-20
V
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-4.5V, I
D
=-10A
11
14
m
V
GS
=-2.5V, I
D
=-7.6A
18
24
I
D(ON)
On-State Drain Current
2
V
GS
=-4.5V, V
DS
=-5V (Pulsed)
-48
A
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
=12V, V
DS
=0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=-20V
-1
A
V
GS
=0V, V
DS
=-16V, T
J
=70C
3
-5
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=-10A
31
S
Dynamic Characteristics
3
Q
G
Total Gate Charge
V
DS
=-10V, R
D
=1.0
, V
GS
=-4.5V
36
Q
GS
Gate-Source Charge
V
DS
=-10V, R
D
=1.0
, V
GS
=-4.5V
5
nC
Q
GD
Gate-Drain Charge
V
DS
=-10V, R
D
=1.0
, V
GS
=-4.5V
13
t
D(ON)
Turn-ON Delay
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0
, R
G
=6
10
t
R
Turn-ON Rise Time
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0
, R
G
=6
72
ns
t
D(OFF)
Turn-OFF Delay
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0
, R
G
=6
78
t
F
Turn-OFF Fall Time
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0
, R
G
=6
108
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=-10A
-1.1
V
I
S
Continuous Diode Current
1
-2.3
A
AAT8303
20V P-Channel Power MOSFET
2
8303.2003.09.0.62
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Threshold Voltage
T
J
(
C)
V
GS(th)
Variance (V)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
125
150
I
D
= 250
A
On-Resistance vs. Junction Temperature
T
J
(
C)
Normalized R
DS(ON)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50
-25
0
25
50
75
100
125
150
V
GS
= 4.5V
I
D
= 10A
On-Resistance vs. Gate to Source Voltage
V
GS
(V)
R
DS(ON)
(
)
0
0.02
0.04
0.06
0
1
2
3
4
5
I
D
= 10A
On-Resistance vs. Drain Current
I
D
(A)
R
DS(ON)
(
)
0
0.008
0.016
0.024
0.032
0.04
0
8
16
24
32
40
48
V
GS
= 2.5V
V
GS
= 4.5V
Transfer Characteristics
V
GS
(V)
I
D
(A)
V
D
=V
G
0
8
16
24
32
40
48
0
1
2
3
4
-55
C
25
C
125
C
Output Characteristics
V
DS
(V)
I
DS
(A)
1.5V
2V
2.5V
5V
4.5V
4V
0
8
16
24
32
40
48
0
0 .5
1
1 .5
2
2 .5
3
3V
3.5V
AAT8303
20V P-Channel Power MOSFET
8303.2003.09.0.62
3
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Transient Thermal Response, Junction to Ambient
Time (s)
Normalized Effective
Transient Thermal Impedance
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
.01
.02
.1
.2
.5
Single Pulse
Single Pulse Power, Junction to Ambient
Time (s)
Power (W)
0
5
10
15
20
25
30
35
40
45
50
0.001
0.01
0.1
1
10
100
1000
Capacitance
V
DS
(V)
Capacitance (pF)
C
iss
C
oss
C
rss
0
1000
2000
3000
4000
5000
0
5
10
15
20
Source-Drain Diode Forward Voltage
V
SD
(V)
I
S
(A)
0.1
1
10
100
0
0 .2
0.4
0 .6
0.8
1
1.2
T
J
= 150
C
T
J
= 25
C
Gate Charge
Q
G
, Charge (nC)
V
GS
(V)
0
1
2
3
4
5
0
5
10
15
20
25
30
35
40
V
D
=10V
I
D
=10A
AAT8303
20V P-Channel Power MOSFET
4
8303.2003.09.0.62
Ordering Information
Note 1: XYY = assembly and date code.
Package Information
TSOPJW-8
All dimensions in millimeters.
0.65 BSC 0.65 BSC 0.65 BSC
0.325
0.075
2.85
0.20
2.40
0.10
3.025
0.075
0.055
0.045
0.9625
0.0375
1.0175
0.0925
0.010
0.15
0.05
7
0.04 REF
0.45
0.15
2.75
0.25
Package
Marking
1
Part Number (Tape and Reel)
TSOPJW-8
JXXYY
AAT8303ITS-T1
AAT8303
20V P-Channel Power MOSFET
8303.2003.09.0.62
5
AAT8303
20V P-Channel Power MOSFET
6
8303.2003.09.0.62
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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rights, or other intellectual property rights are implied.
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supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
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