General Description
The AAT8343 is a low threshold P-channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech's ultra-high-density
proprietary TrenchDMOSTM technology, this product
demonstrates high power handling and small size.
Applications
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Features
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max):
-4.5A @ 25C
Low On-Resistance:
-- 60m
@ V
GS
= -4.5V
-- 110m
@ V
GS
= -2.5V
TSOP-6 Package
D
D
S
D
D
G
Top View
1
2
3
6
5
4
AAT8343
20V P-Channel Power MOSFET
Absolute Maximum Ratings
T
A
= 25C, unless otherwise noted.
Thermal Characteristics
1
Symbol
Description
Typ
Max
Units
R
JA
Junction-to-Ambient Steady State
95
115
C/W
R
JA2
Junction-to-Ambient t<5 Seconds
51
62
C/W
R
JF
Junction-to-Foot
25
30
C/W
P
D
Maximum Power Dissipation
T
A
= 25C
2.0
W
T
A
= 70C
1.3
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
= 150C
1
T
A
= 25C
4.5
T
A
= 70C
3.6
A
I
DM
Pulsed Drain Current
2
16
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.3
T
J
Operating Junction Temperature Range
-55 to 150
C
T
STG
Storage Temperature Range
-55 to 150
C
8343.2005.04.1.0
1
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design; however,
R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300s.
Electrical Characteristics
T
J
= 25C, unless otherwise noted.
Symbol Description
Conditions
Min
Typ Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown
V
GS
= 0V, I
D
= -250A
-20
V
Voltage
R
DS(ON)
Drain-Source On-Resistance
1
V
GS
= -4.5V, I
D
= -4.5A
49
60
m
V
GS
= -2.5V, I
D
= -3.3A
85
110
I
D(ON)
On-State Drain Current
1
V
GS
= -4.5V, V
DS
= -5V (pulsed)
-16
A
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= -250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
= 12V, V
DS
= 0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
= 0V, V
DS
= -20V
-1
A
V
GS
= 0V, V
DS
= -16V, T
J
= 70C
2
-5
g
fs
Forward Transconductance
1
V
DS
= -5V, I
D
= -4.5A
7
S
Dynamic Characteristics
2
Q
G
Total Gate Charge
V
DS
= -10V, R
D
= 2.2
, V
GS
= -4.5V
8.5
Q
GS
Gate-Source Charge
V
DS
= -10V, R
D
= 2.2
, V
GS
= -4.5V
1.8
nC
Q
GD
Gate-Drain Charge
V
DS
= -10V, R
D
= 2.2
, V
GS
= -4.5V
2.9
t
D(ON)
Turn-On Delay
V
DS
= -10V, R
D
= 2.2
, V
GS
= -4.5V, R
G
= 6
12
t
R
Turn-On Rise Time
V
DS
= -10V, R
D
= 2.2
, V
GS
= -4.5V, R
G
= 6
32
ns
t
D(OFF)
Turn-Off Delay
V
DS
= -10V, R
D
= 2.2
, V
GS
= -4.5V, R
G
= 6
64
t
F
Turn-Off Fall Time
V
DS
= -10V, R
D
= 2.2
, V
GS
= -4.5V, R
G
= 6
40
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward
V
GS
= 0, I
S
= -4.5A
-1.3
V
Voltage
1
I
S
Continuous Diode Current
3
-1.3
A
AAT8343
20V P-Channel Power MOSFET
2
8343.2005.04.1.0
1. Pulse test: Pulse Width = 300s.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design; however,
R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Threshold Voltage
V
GS(th)
Variance (V)
T
J
(C)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
125
150
I
D
= 250A
T
J
(
C)
Normalized R
DS(ON)
On-Resistance vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50
-25
0
25
50
75
100
125
150
V
GS
= 4.5V
I
D
= 4.2A
On-Resistance vs. Gate-to-Source Voltage
V
GS
(V)
R
DS(ON)
(
)
I
D
= 4.5A
1
0
2
3
4
5
0
0.05
0.1
0.15
0.2
0.25
I
D
(A)
R
DS(ON)
(
)
On-Resistance vs. Drain Current
0
0.08
0.16
0.24
0.32
0.4
0
5
10
15
20
V
GS
= 2.5V
V
GS
= 4.5V
Transfer Characteristics
V
GS
(V)
I
D
(A)
V
D
= V
G
0
5
10
15
20
01
1
2
3
4
5
125C
-55C
25C
V
DS
(V)
I
DS
(A)
Output Characteristics
3
1.5V
3V
3.5V
2V
2.5V
0
8
4
12
16
20
0
0.5
1.5
2.5
1
2
4V
4.5V
5V
AAT8343
20V P-Channel Power MOSFET
8343.2005.04.1.0
3
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Transient Thermal Response, Junction to Ambient
Normalized Effective
Transient Thermal Impedance
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
.5
.2
.1
.02
Single Pulse
.05
Single Pulse Power, Junction to Ambient
Time (s)
Power (
W
)
0
5
10
15
20
25
30
35
40
45
50
0.001
0.01
0.1
1
10
100
1000
Capacitance
V
DS
(V)
Capacitance (pF)
C
iss
C
rss
C
oss
0
200
400
600
800
1000
0
5
10
15
20
V
SD
(V)
I
S
(A)
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
T
J
= 25C
T
J
= 150C
Gate Charge
Q
G
, Charge (nC)
V
GS
(V)
0
1
2
3
4
5
0
2
4
6
8
10
V
D
= 10V
I
D
= 4.5A
AAT8343
20V P-Channel Power MOSFET
4
8343.2005.04.1.0
AAT8343
20V P-Channel Power MOSFET
8343.2005.04.1.0
5
Ordering Information
Package Information
TSOP-6
All dimensions in millimeters.
3.025
0.075
0.055
0.045
2.85
0.20
2.40
0.10
0.45
0.10 0.45
0.10
0.325
0.075
0.9625
0.0375
1.0175
0.0825
0.15
0.05
7
0.04 REF
0.45
0.15
2.75
0.25
0.010
Package
Marking
1
Part Number (Tape and Reel)
2
TSOP-6
KEXYY
AAT8343IDU-T1
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
AAT8343
20V P-Channel Power MOSFET
6
8343.2005.04.1.0
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
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