General Description
The AAT8401 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTechTM's ultra high density proprietary
TrenchDMOSTM technology, this product demon-
strates high power handling and small size.
Applications
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Features
V
DS(MAX)
= -20V
I
D(MAX)
1
= -2.4A @ 25C
Low R
DS(ON)
:
100 m
@ V
GS
= -4.5V
175 m
@ V
GS
= -2.5V
SC59 Package
D
G
S
Top View
1
2
3
AAT8401
20V P-Channel Power MOSFET
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
JA
Typical Junction-to-Ambient steady state
1
145
C/W
R
JA2
Maximum Junction-to-Ambient t<5 seconds
1
125
C/W
R
JF
Typical Junction-to-Foot
1
50
C/W
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
=150C
1
T
A
= 25C
2.4
T
A
= 70C
2.0
A
I
DM
Pulsed Drain Current
2
9
I
S
Continuous Source Current (Source-Drain Diode)
1
-0.9
P
D
Maximum Power Dissipation
1
T
A
= 25C
1.0
W
T
A
= 70C
0.6
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
Preliminary Information
8401.2003.06.0.61
1
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design, howev-
er R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 s
Note 3: Guaranteed by design. Not subject to production testing.
Symbol
Description
Conditions
Min
Typ Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250A
-20
V
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-4.5V, I
D
=-2.4A
88
100
m
V
GS
=-2.5V, I
D
=-1.8A
146
175
I
D(ON)
On-State Drain Current
2
V
GS
=-4.5V, V
DS
=-5V (Pulsed)
-9
A
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
=12V, V
DS
=0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=-20V
-1
A
V
GS
=0V, V
DS
=-16V, T
J
=70C
3
-5
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=-2.4A
4
S
Dynamic Characteristics
3
Q
G
Total Gate Charge
V
DS
=-15V, R
D
=5.6
, V
GS
=-4.5V
4
Q
GS
Gate-Source Charge
V
DS
=-15V, R
D
=5.6
, V
GS
=-4.5V
0.6
nC
Q
GD
Gate-Drain Charge
V
DS
=-15V, R
D
=5.6
, V
GS
=-4.5V
1.4
t
D(ON)
Turn-ON Delay
V
DS
=-15V, R
D
=5.6
, V
GS
=-4.5V, R
G
=6
6.5
t
R
Turn-ON Rise Time
V
DS
=-15V, R
D
=5.6
, V
GS
=-4.5V, R
G
=6
13
ns
t
D(OFF)
Turn-OFF Delay
V
DS
=-15V, R
D
=5.6
, V
GS
=-4.5V, R
G
=6
15
t
F
Turn-OFF Fall Time
V
DS
=-15V, R
D
=5.6
, V
GS
=-4.5V, R
G
=6
20
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=-2.4A
-1.3
V
I
S
Continuous Diode Current
1
-0.9
A
AAT8401
20V P-Channel Power MOSFET
2
8401.2003.06.0.61
Typical Characteristics
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
V
GS(th)
Variance (V)
I
D
= 250A
Threshold Voltage
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
Normalized R
DS(ON)
V
GS
= 4.5V
I
D
= 2.7A
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate to Source Voltage
0
50
100
150
200
250
300
0
1
2
3
4
5
V
GS
(V)
R
DS(ON)
(m
)
I
D
= 2.7A
On-Resistance vs. Drain Current
0
50
100
150
200
250
300
0
2
4
6
8
I
D
(A)
R
DS(ON)
(m
)
V
GS
= 2.5V
V
GS
= 4.5V
Transfer Characteristics
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
V
D
= V
G
25C
-55C
125C
Output Characteristics
0
1
2
3
4
5
6
7
8
9
0
1
2
3
V
DS
(V)
I
DS
(A)
1.5V
2.5V
3.5V
4.5V
2V
3V
4V
5V
AAT8401
20V P-Channel Power MOSFET
8401.2003.06.0.61
3
Typical Characteristics
Transient Thermal Response, Junction to Ambient
0.01
0.1
1
10
0.0001
0.01
0.001
0.1
1
10
100
1000
Time (s)
Normalized Effective
Transient Thermal Impedance
Single Pulse
0.1
0.2
.02
.05
0.5
Single Pulse Power, Junction to Ambient
Time (s)
Power (W)
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
1000
Capacitance
0
150
300
450
600
750
-20
-15
-10
-5
0
V
DS
(V)
Capacitance (pF)
C
iss
C
oss
C
rss
Source-Drain Diode Forward Voltage
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(V)
I
S
(A)
T
J
= 25C
T
J
= 150C
Gate Charge
Q
G
, Charge (nC)
V
GS
(V)
0
1
2
3
4
5
0
1
2
3
4
5
V
D
= 15V
I
D
= 2.7A
AAT8401
20V P-Channel Power MOSFET
4
8401.2003.06.0.61
Ordering Information
Note: Sample stock is generally held on all part numbers listed in BOLD.
Note 1: XYY = assembly and date code.
Package Information
SC59
0.95 BSC
1.90 BSC
0.40
0.10 3
2.85
0.15
0.45
0.15
1.575
0.125
2.80
0.20
0.075
0.075
1.20
0.30
0.14
0.06
4
4
Package
Marking
1
Part Number (Tape and Reel)
SC59
IGXYY
AAT8401IGY-T1
AAT8401
20V P-Channel Power MOSFET
8401.2003.06.0.61
5
AAT8401
20V P-Channel Power MOSFET
6
8401.2003.06.0.61
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
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