AAT9460
30V N-Channel Power MOSFET
Preliminary Information
9460.2003.10.0.63
1
General Description
The AAT9460 is a low threshold MOSFET designed
for applications in DC-DC Converter, battery, cell
phone, and PDA markets. Using AnalogicTechTM's
ultra-high density proprietary TrenchDMOSTM tech-
nology, this product demonstrates high power han-
dling and small size.
Applications
DC-DC Converters
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Features
V
DS(MAX)
= 30V
I
D(MAX)
1
= 3.4A @ 25C
Low R
DS(ON)
:
58 m
@ V
GS
= 4.5V
84 m
@ V
GS
= 2.5V
SC59 Package
D
G
S
Top View
1
2
3
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
JA
Typical Junction-to-Ambient steady state
1
140
R
JA2
Maximum Junction-to-Ambient t<5 seconds
1
115
C/W
R
JF
Typical Junction-to-Foot
1
45
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
30
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
=150C
1
T
A
= 25C
3.4
T
A
= 70C
2.7
A
I
DM
Pulsed Drain Current
2
8.0
I
S
Continuous Source Current (Source-Drain Diode)
1
1.0
P
D
Maximum Power Dissipation
1
T
A
= 25C
1.1
W
T
A
= 70C
0.7
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
AAT9460
30V N-Channel Power MOSFET
2
9460.2003.10.0.63
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. R
JF
+ R
FA
= R
JA
where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by
design; however, R
FA
is determined by PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse width = 300 s.
Note 3: Guaranteed by design. Not subject to production testing.
Symbol
Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250A
30
V
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-4.5V, I
D
=3.4A
46
58
m
V
GS
=-2.5V, I
D
=2.8A
65
84
I
D(ON)
On-State Drain Current
2
V
GS
=4.5V, V
DS
=5V (Pulsed)
8
A
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250A
0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
=12V, V
DS
=0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=30V
1
A
V
GS
=0V, V
DS
=24V, T
J
=70C
3
5
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=3.4A
9
S
Dynamic Characteristics
3
Q
G
Total Gate Charge
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V
5
Q
GS
Gate-Source Charge
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V
0.9
nC
Q
GD
Gate-Drain Charge
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V
1
t
D(ON)
Turn-ON Delay
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V, R
G
=6
6
t
R
Turn-ON Rise Time
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V, R
G
=6
3
ns
t
D(OFF)
Turn-OFF Delay
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V, R
G
=6
30
t
F
Turn-OFF Fall Time
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V, R
G
=6
8
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=3.4A
1.3
V
I
S
Continuous Diode Current
1
1.0
A
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Threshold Voltage
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
V
GS(th)
Variance (V)
I
D
= 250A
On-Resistance vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
(C)
Normalized R
DS(ON)
V
GS
= 4.5V
I
D
= 3.6A
On-Resistance vs. Gate to Source Voltage
0
20
40
60
80
100
120
0
1
2
3
4
5
V
GS
(V)
R
DS(ON)
(m
)
I
D
= 3.6A
On-Resistance vs. Drain Current
0
20
40
60
80
100
120
0
2
4
6
8
I
D
(A)
R
DS(ON)
(m
)
V
GS
= 2.5V
V
GS
= 4.5V
Transfer Characteristics
0
2
4
6
8
0
0.5
1
1.5
2
2.5
3
V
GS
(V)
I
D
(A)
V
D
=V
G
25C
-55C
125C
Output Characteristics
0
2
4
6
8
0
0.5
1
1.5
2
V
DS
(V)
I
DS
(A)
1.5V
2V
3.5V
2.5V
5V
4.5V
3V
AAT9460
30V N-Channel Power MOSFET
9460.2003.10.0.63
3
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Capacitance
0
200
400
600
800
1000
0
5
10
15
20
25
30
V
DS
(V)
Capacitance (pF)
C
ISS
C
OSS
C
RSS
Source-Drain Diode Forward Voltage
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(V)
I
S
(A)
T
J
= 25C
T
J
= 150C
Gate Charge
0
1
2
3
4
5
0
1
2
3
4
5
6
Q
G
, Charge (nC)
V
GS
(V)
I
D
=3.6A
V
D
=15A
AAT9460
30V N-Channel Power MOSFET
4
9460.2003.10.0.63
Ordering Information
Package Information
SC59
All dimensions in millimeters.
0.95 BSC
1.90 BSC
0.40
0.10 3
2.85
0.15
0.45
0.15
1.575
0.125
2.80
0.20
0.075
0.075
1.20
0.30
0.14
0.06
4
4
Package
Marking
Part Number (Tape and Reel)
SC59
HA
AAT9460IGY-T1
AAT9460
30V N-Channel Power MOSFET
9460.2003.10.0.63
5
AAT9460
30V N-Channel Power MOSFET
6
9460.2003.10.0.63
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
PDF 
ZIP