Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
70
90
100
125
R
JL
63
80
Junction and Storage Temperature Range
A
P
D
C
1.4
1
-55 to 150
T
A
=70C
I
D
-2.6
-2.2
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Gate-Source Voltage
Drain-Source Voltage
-30
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO3409
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -2.6 A (V
GS
= -10V)
R
DS(ON)
< 130m
(V
GS
= -10V)
R
DS(ON)
< 200m
(V
GS
= -4.5V)
General Description
The AO3409 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO3409 is Pb-free
(meets ROHS & Sony 259 specifications). AO3409L
is a Green Product ordering option. AO3409 and
AO3409L are electrically identical.
S
G
D
TO-236
(SOT-23)
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO3409
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.9
-3
V
I
D(ON)
-5
A
97
130
T
J
=125C
135
150
166
200
m
g
FS
3
3.8
S
V
SD
-0.82
-1
V
I
S
-2
A
C
iss
302
370
pF
C
oss
50.3
pF
C
rss
37.8
pF
R
g
12
18
Q
g
(10)
6.8
9
nC
Q
g
(4.5)
2.4
nC
Q
gs
1.6
nC
Q
gd
0.95
nC
t
D(on)
7.5
ns
t
r
3.2
ns
t
D(off)
17
ns
t
f
6.8
ns
t
rr
16.8
22
ns
Q
rr
10
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=-10V, V
DS
=-15V, I
D
=-2.6A
I
F
=-2.6A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge(4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=5.8
,
R
GEN
=3
Gate resistance
m
V
GS
=-4.5V, I
D
=-2A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2.5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2.6A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-2.6A
Reverse Transfer Capacitance
Total Gate Charge(10V)
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 4: June 2005
Alpha & Omega Semiconductor, Ltd.
AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
370
18
9
22
0
5
10
15
20
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-4.5V
-4V
-5.5V
-10V
-3.5V
0
2
4
6
8
10
1
2
3
4
5
6
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
50
100
150
200
250
0
1
2
3
4
5
6
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=-10V
0
50
100
150
200
250
300
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-2A
25C
125C
I
D
=-2A
-5V
V
GS
=-4.5V
-3.0V
-8V
-6V
Alpha & Omega Semiconductor, Ltd.
AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
370
18
9
22
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts)
0
100
200
300
400
500
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-2.6A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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