Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
V
Continuous Drain
Current
A
T
A
=25C
I
D
6
A
T
A
=70C
5
Pulsed Drain Current
B
I
DM
25
Power Dissipation
A
T
A
=25C
P
D
1.4
W
T
A
=70C
0.9
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
70
90
C/W
Maximum Junction-to-Ambient
A
Steady-State
100
125
C/W
Maximum Junction-to-Lead
C
Steady-State
R
JL
63
80
C/W
AO3420
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 6 A (V
GS
= 10V)
R
DS(ON)
< 24m
(V
GS
= 10V)
R
DS(ON)
< 27m
(V
GS
= 4.5V)
R
DS(ON)
< 42m
(V
GS
= 2.5V)
R
DS(ON)
< 55m
(V
GS
= 1.8V)
General Description
The AO3420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch. Standard Product AO3420 is Pb-free
(meets ROHS & Sony 259 specifications). AO3420L
is a Green Product ordering option. AO3420 and
AO3420L are electrically identical.
G
D
S
S
G
D
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.
AO3420
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.5
0.7
1
V
I
D(ON)
25
A
19
24
T
J
=125C
29
35
22
27
35
42
45
55
g
FS
24
S
V
SD
0.75
1
V
I
S
2
A
C
iss
630
pF
C
oss
164
pF
C
rss
137
pF
R
g
1.5
Q
g
8.8
nC
Q
gs
1
nC
Q
gd
3.7
nC
t
D(on)
5.5
ns
t
r
14
ns
t
D(off)
29
ns
t
f
10.2
ns
t
rr
15.2
ns
Q
rr
6.3
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
m
I
F
=6A, dI/dt=100A/
s
V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=6A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250uA
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=1.8V, I
D
=2A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=6A, dI/dt=100A/
s
Reverse Transfer Capacitance
Turn-Off Fall Time
Turn-On DelayTime
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=3.8A
V
GS
=5V, V
DS
=10V, R
L
=1.7
,
R
GEN
=6
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev0 : July 2005
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
270
1.7
3.6
13
10
20
30
40
50
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=1.8V
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=3.8A
25C
125C
I
D
=3.8A
I
D
=1A
I
D
=3.5A
0
10
20
30
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A
)
V
GS
=1.5V
V
GS
=2V
3V
4V
10V
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
25C
125C
V
GS
=5V
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
a
lize ON
-
R
esist
a
n
c
e
V
GS
=4.5V
I
D
=5A
V
GS
=2.5V
I
D
=4A
V
GS
=1.8V
I
D
=2A
V
GS
=10V
I
D
=6A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
10
20
30
40
50
60
70
80
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
I
D
=6A
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
270
1.7
3.6
13
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
V
DS
=15V
I
D
=3.8A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
0
1
2
3
4
5
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
t
s)
V
DS
=10V
I
D
=6A
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
C
rss
C
oss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10s
100s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
100m
1s
Alpha & Omega Semiconductor, Ltd.
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