Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
31
40
59
75
R
JL
16
24
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
12
Gate-Source Voltage
Drain-Source Voltage
-30
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
-5.1
-60
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
3
2.1
-55 to 150
T
A
=70C
I
D
-6.1
AO4401
P-Channel Enhancement Mode Field Effect Transistor
July 2001
Features
V
DS
(V) = -30V
I
D
= -6.1 A
R
DS(ON)
< 46m
(V
GS
= -10V)
R
DS(ON)
< 61m
(V
GS
= -4.5V)
R
DS(ON)
< 117m
(V
GS
= -2.5V)
General Description
The AO4401 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
SOIC-8
Top View
G
D
S
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.
AO4401
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-0.7
-1
-1.3
V
I
D(ON)
A
38
46
T
J
=125C
70
49
61
m
76
117
m
g
FS
7
11
S
V
SD
-0.75
-1
V
I
S
-4.2
A
C
iss
940
pF
C
oss
104
pF
C
rss
73
pF
R
g
6
Q
g
9.4
nC
Q
gs
2
nC
Q
gd
3
nC
t
D(on)
7.6
ns
t
r
8.6
ns
t
D(off)
44.7
ns
t
f
16.5
ns
t
rr
22.7
ns
Q
rr
15.9
nC
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
I
F
=-5A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-15V, I
D
=-5A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=2.4
,
R
GEN
=6
m
V
GS
=-4.5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-2.5V, I
D
=-1A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-6.1A
Reverse Transfer Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A)
V
GS
=-2V
-2.5V
-3V
-4.5V
-10V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
20
40
60
80
100
120
0.00
2.00
4.00
6.00
8.00
10.00
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
al
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=-2.5V
V
GS
=-10V
V
GS
=-4.5V
10
30
50
70
90
110
130
150
170
190
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-2.5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-2A
25C
125C
I
D
=-2A
I
D
=-5A
Alpha and Omega Semiconductor, Ltd.
AO4401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
10
12
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Vo
l
ts
)
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
aci
t
an
ce (
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Pow
e
r
(W)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
mal
i
z
ed
T
r
an
si
en
t
T
h
er
mal
R
esi
st
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(Am
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
E
h
L
aaa
b
E1
c
e
D
A
A2
A1
SYMBOLS
0.050 BSC
0.50
1.27
8
0.10
0.10
5.00
6.20
4.00
0.51
0.25
---
1.55
---
5.80
0
0.25
0.40
---
---
---
---
---
1.27 BSC
0.19
3.80
4.80
1.45
0.33
---
0.00
---
---
---
---
1.50
1.45
---
---
0.228
0.010
0.016
---
0
---
---
---
---
0.057
0.007
0.013
---
0.150
0.189
0.000
---
---
---
---
0.059
0.057
---
0.244
8
0.020
0.050
0.004
0.010
0.157
0.197
0.061
0.020
---
0.004
DIMENSIONS IN INCHES
DIMENSIONS IN MILLIMETERS
MAX
MIN
NOM
MIN
NOM
MAX
SO-8 Package Data
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE 0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
RECOMMENDED LAND PATTERN
PACKAGE MARKING DESCRIPTION
NOTE:
LG - AOS LOGO
PARTN - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L N - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
PART NO.
AO4400
AO4401
CODE
4401
4400
4800
CODE
AO4800
AO4801
PART NO.
4801
4700
CODE
AO4700
AO4701
PART NO.
4701
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, INC.
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