Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
31
40
59
75
R
JL
16
24
W
Junction and Storage Temperature Range
A
P
D
C
3
2.1
-55 to 150
T
A
=70C
I
D
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
30
Maximum Junction-to-Ambient
A
Steady-State
8.5
7.1
60
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Pulsed Drain Current
B
Power Dissipation
T
A
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
AO4412
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 8.5A (V
GS
= 10V)
R
DS(ON)
< 26m
(V
GS
= 10V)
R
DS(ON)
< 34m
(V
GS
= 4.5V)
General Description
The AO4412 uses advanced trench technology to
provide excellent R
DS(ON)
and ultra low gate charge for
use has a fast high side switch. The source leads are
separated to allow a Kelvin connection to the source,
which may be used to bypass the source
inductance.Standard product AO4412 is Pb-free
(meets ROHS & Sony 259 specifications). AO4412L
is a Green Product ordering option. AO4412 and
AO4412L are electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO4412
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
30
A
22
26
T
J
=125C
28
34
m
g
FS
S
V
SD
0.76
1
V
I
S
4
A
C
iss
590
pF
C
oss
162
pF
C
rss
40
pF
R
g
0.45
Q
g
6.04
nC
Q
gs
1.46
nC
Q
gd
2.56
nC
t
D(on)
3.7
ns
t
r
3.5
ns
t
D(off)
14.9
ns
t
f
2.5
ns
t
rr
26
ns
Q
rr
20
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=15V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=8.5A
Gate Source Charge
m
V
GS
=4.5V, I
D
=5A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
Reverse Transfer Capacitance
I
F
=5A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=1.5V
2V
2.5V
3V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
20
30
40
50
60
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=8.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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