Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
38
50
69
80
R
JL
24
30
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
25
Pulsed Drain Current
B
Power Dissipation
T
A
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
3.1
2.5
20
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
75
W
Junction and Storage Temperature Range
A
P
D
C
2.5
1.6
-55 to 150
T
A
=70C
I
D
AO4442
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 75V
I
D
= 3.1A (V
GS
= 10V)
R
DS(ON)
< 130m
(V
GS
= 10V)
R
DS(ON)
< 165m
(V
GS
= 4.5V)
General Description
The AO4442 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages from 4.5V to 25V. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4442 is Pb-free
(meets ROHS & Sony 259 specifications). AO4442L
is a Green Product ordering option. AO4442 and
AO4442L are electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO4442
Symbol
Min
Typ
Max
Units
BV
DSS
75
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.4
3
V
I
D(ON)
20
A
100
130
T
J
=125C
180
220
120
165
m
g
FS
8.2
S
V
SD
0.79
1
V
I
S
10
A
C
iss
303
350
pF
C
oss
37
pF
C
rss
17
pF
R
g
2.2
3
Q
g
(10V)
5.2
6.5
nC
Q
g
(4.5V)
2.46
3.5
nC
Q
gs
1
nC
Q
gd
1.34
nC
t
D(on)
4.5
ns
t
r
2.3
ns
t
D(off)
15.6
ns
t
f
1.9
ns
t
rr
22
30
ns
Q
rr
22
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Charge I
F
=3.1A, dI/dt=100A/
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=37.5V, R
L
=12
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=37.5V, I
D
=3.1A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
m
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=3.1A
V
GS
=4.5V, I
D
=2A
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
A
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=10mA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=3.1A
Reverse Transfer Capacitance
I
F
=3.1A, dI/dt=100A/
s
V
GS
=0V, V
DS
=37.5V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 1 : Sept 2005
Alpha & Omega Semiconductor, Ltd.
AO4442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
2
2.5
3
3.5
4
4.5
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
80
100
120
140
160
180
200
220
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
al
i
z
ed On-Resi
stance
V
GS
=4.5V
I
D
=2A
V
GS
=10V
I
D
=3.1A
80
100
120
140
160
180
200
220
240
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=3.1A
25C
125C
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=4V
3.5V
6V
7V
10V
4.5V
5V
Alpha & Omega Semiconductor, Ltd.
AO4442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
50
100
150
200
250
300
350
400
0
10
20
30
40
50
60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capaci
tance (pF)
C
iss
0
10
20
30
40
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JA
Norm
al
i
z
ed Transi
ent
Therm
al
Resi
stance
C
oss
C
rss
0.0
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
1s
V
DS
=37.5V
I
D
=3.1A
Single Pulse
D=T
on
/T
T
J,PK
=T
J
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
10s
0.1s
Alpha & Omega Semiconductor, Ltd.
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