Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
28
34
57
71
R
JL
16
23
Pulsed Drain Current
B
60
A
T
A
=70C
10.7
Continuous Drain
Current
A
T
A
=25C
I
DSM
13.4
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
30
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
Maximum
Units
Parameter
Junction and Storage Temperature Range
C
-55 to 150
3.7
W
T
A
=70C
2.4
Power Dissipation
T
A
=25C
P
D
AO4474
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 13.4A (V
GS
= 10V)
R
DS(ON)
<11.5m
(V
GS
= 10V)
R
DS(ON)
< 13.5m
(V
GS
= 4.5V)
General Description
The AO4474 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
Standard Product
AO4474 is Pb-free (meets ROHS & Sony 259
specifications). AO4474L is a Green Product ordering
option. AO4474 and AO4474L are electrically
identical.
D
S
G
SOIC-8
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.
AO4474
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
0.1
A
V
GS(th)
1
1.55
2.5
V
I
D(ON)
60
A
9.5
11.5
T
J
=125C
16.2
18
11
13.5
m
g
FS
40
S
V
SD
0.74
1.0
V
I
S
5
A
C
iss
1210
1452
pF
C
oss
330
pF
C
rss
85
pF
R
g
1.2
1.6
Q
g
(10V)
22
28
nC
Q
g
(4.5V)
10
nC
Q
gs
3.7
nC
Q
gd
2.7
nC
t
D(on)
10
ns
t
r
6.3
ns
t
D(off)
21
ns
t
f
2.8
ns
t
rr
36
45
ns
Q
rr
47
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=13.4A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=13.4A
Reverse Transfer Capacitance
I
F
=13.4A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
uA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=10A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=13.4A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.1
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=13.4A
A: The value of R
JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
Rev1: Apr 2006
Alpha & Omega Semiconductor, Ltd.
AO4474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
10V
4.5V
V
GS
=2.5V
6V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
5
7
9
11
13
15
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
30
60
90
120
150
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
I
D
=13.4A
V
GS
=10V
V
GS
=4.5
5
10
15
20
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=13.4A
25C
125C
3V
Alpha & Omega Semiconductor, Ltd.
AO4474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
500
1000
1500
2000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
C
oss
C
rss
0.0
0.1
1.0
10.0
100.0
0.01
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
s
10ms
1m
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
100
V
DS
=15V
I
D
=13.4A
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note G)
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=34C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note G)
Po
w
e
r
(
W
)
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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