Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
V
DS
I
DM
T
J
, T
STG
W
T
A
=70C
1.28
Junction and Storage Temperature Range
-55 to 150
C
Pulsed Diode Forward Current
B
20
Power Dissipation
A
T
A
=25C
P
D
2
30
-30
20
Drain-Source Voltage
20
Gate-Source Voltage
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
W
6.9
5.8
30
2
1.28
-5
-6
2
1.28
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
-30
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Reverse Voltage
30
V
Continuous Forward
Current
A
T
A
=25C
I
D
3
A
T
A
=70C
2
Junction and Storage Temperature Range
Parameter
Maximum Schottky
Units
-55 to 150
-55 to 150
AO4607
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A (V
GS
=10V) -6A (V
GS
=1
-
0V)
R
DS(ON)
R
DS(ON)
< 28m (V
GS
=10V) < 35m (V
GS
=
-
10V)
< 42m (V
GS
=4.5V) < 58m (V
GS
=
-
4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
General Description
The AO4607 uses advanced trench
technology MOSFETs to provide excellen
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the n-
channel FET to minimize body diode
losses.
AO4607 is Pb-free (meets ROHS
& Sony 259 specifications). AO4607L is
a Green Product ordering option.
AO4607 and AO4607L are electrically
identical.
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K
1
2
3
4
8
7
6
5
SOIC-8
G
D
S
n-channel
p-channel
G
D
S2
K
A
Alpha & Omega Semiconductor, Ltd.
AO4607
Symbol
Device
Typ
Max
Units
n-ch
48
62.5
C/W
n-ch
74
110
C/W
R
JL
n-ch
35
60
C/W
p-ch
48
62.5
C/W
p-ch
74
110
C/W
R
JL
p-ch
35
40
C/W
Schottky
47.5
62.5
C/W
Schottky
71
110
C/W
R
JL
Schottky
32
40
C/W
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t 10s
Thermal Characteristics: n-channel, Schottky and p-channel
R
JA
Maximum Junction-to-Ambient
A
Steady-State
R
JA
Maximum Junction-to-Ambient
A
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t 10s
Alpha Omega Semiconductor, Ltd.
AO460
7
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
10
12
20
I
GSS
100
nA
V
GS(th)
1
1.9
3
V
I
D(ON)
20
A
22.5
28
T
J
=125C
31.3
38
34.5
42
m
g
FS
10
15.4
S
V
SD
0.45
0.5
V
I
S
5.5
A
C
iss
680
820
pF
C
oss
131
pF
C
rss
77
pF
R
g
3
3.6
Q
g
(10V)
13.84
16.6
nC
Q
g
(4.5V)
6.74
nC
Q
gs
1.82
nC
Q
gd
3.2
nC
t
D(on)
4.6
ns
t
r
4.1
ns
t
D(off)
20.6
ns
t
f
5.2
ns
t
rr
13.7
16.5
ns
Q
rr
4.1
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
Body-Diode+Schottky Reverse Recovery Charge
Total Gate Charge
I
F
=6.9A, dI/dt=100A/
s
Turn-Off DelayTime
Turn-Off Fall Time
Body-Diode+Schottky Reverse Recovery Time
I
F
=6.9A, dI/dt=100A/
s
Input Capacitance
N-Channel + Schottky Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
V
R
=30V
mA
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
V
R
=30V, T
J
=125C
V
R
=30V, T
J
=150C
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=5.0A
V
DS
=5V, I
D
=6.9A
I
S
=1A
V
GS
=10V, I
D
=6.9A
Body-Diode+Schottky Forward Voltage
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=6.9A
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance (FET+Schottky)
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in any
given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve provides
a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev 4: Sept 2005
Alpha Omega Semiconductor, Ltd.
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNE
L
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
20
30
40
50
60
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode with parallel Schottky
characteristics
(Note F)
I
S
Am
p
s
125C
FET + Schottky
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
50
100
150
200
Temperature ( C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
On
-R
esistan
ce
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=6.9
125C
25C
25C
I
D
=6.9
5V
6V
Alpha & Omega Semiconductor, Ltd.
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNE
L
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
GS
(V
ol
ts)
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics: MOSFET +
Parallel Schottky
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r W
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
(FET + Schottky)
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=6.9A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
10s
Alpha & Omega Semiconductor, Ltd.
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