Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
I
AR
A
E
AR
mJ
T
J
, T
STG
C
Symbol
Typ
Units
n-ch
55
62.5 C/W
n-ch
92
110
C/W
R
JL
n-ch
37
50
C/W
p-ch
48
62.5 C/W
p-ch
87
110
C/W
R
JL
p-ch
37
50
C/W
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
-30
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Steady-State
Junction and Storage Temperature Range
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
W
7.2
6.1
30
2
1.44
-4.9
-5.7
2
1.44
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
R
JA
Maximum Junction-to-Ambient
A
30
-30
20
Drain-Source Voltage
20
Gate-Source Voltage
Max
20
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
Avalanche Current
B
Repetitive avalanche energy 0.1mH
B
15
11
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
20
AO4615
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.2A (V
GS
=10V) -5.7A (V
GS
=10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS
=10V) < 39m
(V
GS
= -10V)
< 40m
(V
GS
=4.5V) < 62m
(V
GS
= -4.5V)
ESD rating: 1500V (HBM)
P-channel MOSFET has an additional R
OC
< 1M
for
open circuit protection.
General Description
The AO4615 uses advanced trench
technology MOSFETs to provide
excellent R
DS(ON)
and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4615 is Pb-free
(meets ROHS & Sony 259
specifications). AO4615L is a Green
Product ordering option. AO46
15 and
AO4615L are electrically identical
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
n-channel
p-channel
G2
D2
S2
G1
D1
S1
R
OC
Alpha & Omega Semiconductor, Ltd.
AO4615
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
10
A
V
GS(th)
1
2
3
V
I
D(ON)
20
A
20
24
T
J
=125C
29
35
30
40
m
g
FS
10
18
S
V
SD
0.77
1
V
I
S
3
A
C
iss
522
630
pF
C
oss
110
pF
C
rss
75
pF
R
g
2.1
3
Q
g
(10V)
11
15
nC
Q
g
(4.5V)
5.3
7
nC
Q
gs
1.9
nC
Q
gd
4
nC
t
D(on)
4.7
7
ns
t
r
4.9
10
ns
t
D(off)
16.2
22
ns
t
f
3.5
7
ns
t
rr
15.7
20
ns
Q
rr
7.9
10
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
I
F
=7.2A, dI/dt=100A/
s
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=7.2A, dI/dt=100A/
s
Input Capacitance
N-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=
4
A
V
DS
=5V, I
D
=
4A
I
S
=1A
V
GS
=10V, I
D
=7.2A
Diode Forward Voltage
V
GS
=10V, V
DS
=15V, R
L
=2.1
,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=7.2A
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient. R
JL
and
R
JC
are equivalent terms referring to thermal
resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
F. Rev 0: July 2005
Alpha & Omega Semiconductor, Ltd.
AO4615
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
15
20
25
30
35
40
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode characteristics
I
S
Am
p
s
125C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
0
25
50
75
100
125
150
175
Temperature ( C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
On
-R
esistan
ce
V
GS
=10V
I
D
=7.2A
V
GS
=4.5V
I
D
=4A
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=7.2A
125C
25C
25C
5V
Alpha & Omega Semiconductor, Ltd.
AO4615
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
GS
(V
ol
ts)
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r W
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=7.2A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
10s
Alpha & Omega Semiconductor, Ltd.
AO4615
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
1
5
A
V
GS(th)
-1
-2
-3
V
I
D(ON)
30
A
32
39
T
J
=125C
46
56
48
62
m
g
FS
13
S
V
SD
-0.77
-1
V
I
S
3
A
C
iss
1035
1250
pF
C
oss
161
pF
C
rss
99
pF
R
g
4.5
10
R
oc
0.5
0.7
1
Q
g
(10V)
18
24
nC
Q
g
(4.5V)
8.9
12
nC
Q
gs
3.8
nC
Q
gd
4.1
nC
t
D(on)
8
11
ns
t
r
6
12
ns
t
D(off)
19.5
26
ns
t
f
5.9
12
ns
t
rr
20.2
27
ns
Q
rr
13.5
18
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=5V
m
V
GS
=-4.5V, I
D
=-4A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-10V, V
DS
=-5V
V
DS
=-5V, I
D
=-5.7A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-5.7A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Open-circuit protection resistance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=5V
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-5.7A
Turn-On DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=2.6
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=-5.7A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-5.7A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
valu in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient. R
JL
and R
JC
are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
F. Rev 0: July 2005
Alpha & Omega Semiconductor, Ltd.
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