Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Symbol
Units
R
JL
R
JL
Pulsed Drain Current
B
Junction and Storage Temperature Range
3
W
Schottky reverse voltage
30
2
2
Power Dissipation
Max
C/W
C/W
MOSFET
-30
25
-10
-8
-60
3
I
F
30
Thermal Characteristics Schottky
40
30
28
54
Continuous Drain Current
A
Gate-Source Voltage
Schottky
Drain-Source Voltage
Parameter
-55 to 150
A
Absolute Maximum Ratings T
A
=25C unless otherwise noted
P
D
I
D
5
A
3.5
30
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t 10s
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
75
Maximum Junction-to-Lead
C
Steady-State
21
40
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
75
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
67
25
36
R
JA
AO4705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -30V
I
D
= -10A (V
GS
= -10V)
R
DS(ON)
< 14m
(V
GS
= -20V)
R
DS(ON)
< 16m
(V
GS
= -10V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 5A, V
F
<0.52V@3A
General Description
The AO4705 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters.
Standard Product AO4705 is Pb-free
(meets ROHS & Sony 259 specifications). AO4705L
is a Green Product ordering option. AO4705 and
AO4705L are electrically identical.
G
D
S
A
K
G
S
S
A
D/K
D/K
D/K
D/K
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
AO4705
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1.7
-2.5
-3
V
I
D(ON)
60
A
13
16
T
J
=125C
16
21
10.7
14
m
25
m
g
FS
26
S
V
SD
-0.72
-1
V
I
S
-4.2
A
C
iss
2076
pF
C
oss
503
pF
C
rss
302
pF
R
g
2
Q
g
37.2
nC
Q
gs
7
nC
Q
gd
10.4
nC
t
D(on)
12.4
ns
t
r
8.2
ns
t
D(off)
25.6
ns
t
f
12
ns
t
rr
33
ns
Q
rr
23
nC
SCHOTTKY PARAMETERS
V
F
0.48
0.52
V
0.07
0.15
4.2
20
15
60
C
T
120
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
mA
V
R
=24V, T
J
=125C
V
R
=24V, T
J
=150C
Junction Capacitance
V
R
=15V
Forward Voltage Drop
I
F
=3.0A
I
rm
Maximum reverse leakage current
V
R
=24V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-10A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-4.5V, I
D
=-10A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-10A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-20V, I
D
=-10A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-10A
I
F
=-10A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-10A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.0
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s
thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The SOA curve provides a single pulse rating.
Rev 4: June 2005
Alpha & Omega Semiconductor, Ltd.
AO4705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A)
V
GS
=-4V
-4.5V
-5V
-5.5V
-10V
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
5
10
15
20
25
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
al
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=-20V
V
GS
=-10V
0
10
20
30
40
50
60
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-6V
V
GS
=-20V
I
D
=-10A
25C
125C
I
D
=-10A
-6V
-8V
V
GS
=-10V
Alpha & Omega Semiconductor, Ltd.
AO4705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
o
l
ts
)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
aci
t
an
ce (
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
wer
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
er
m
al
R
esi
st
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(Am
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-10A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AO4705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTK
Y
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
(Am
p
s)
0
100
200
300
400
500
600
0
5
10
15
20
25
30
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
25
50
75
100
125
150
175
Temperature (C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
eakag
e Cu
r
r
e
n
t
(A)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
25
50
75
100
125
150
175
Temperature (C)
V
F
(V
o
l
ts)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=3A
25C
I
F
=5A
V
R
=24V
125C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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