Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Symbol
Units
R
JL
R
JL
Steady-State
30
40
Maximum Junction-to-Ambient
A
Steady-State
Power Dissipation
30
Schottky reverse voltage
Continuous Forward Current
A
I
F
Pulsed Forward Current
B
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
MOSFET
Schottky
Drain-Source Voltage
-30
Gate-Source Voltage
20
Continuous Drain Current
A
I
D
-8
A
-6.6
Pulsed Drain Current
B
-40
4.4
A
3.2
30
P
D
3
3
W
2
2
Junction and Storage Temperature Range
-55 to 150
Parameter: Thermal Characteristics MOSFET
Typ
Max
-55 to 150
C/W
54
21
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t 10s
R
JA
24
75
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
A
t 10s
R
JA
36
40
C/W
Maximum Junction-to-Ambient
A
Steady-State
67
75
Maximum Junction-to-Lead
C
Steady-State
25
30
AO4709
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -30V
I
D
= -8A (V
GS
=
-
10V)
R
DS(ON)
< 33m
(V
GS
=
-
10V)
R
DS(ON)
< 56m
(V
GS
=
-
4.5V)
SCHOTTKY
V
DS
(V) = 30V,IF = 3A, VF<0.5V@1A
General Description
The AO4709 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of non-
synchronous DC-DC converters.
Standard Product
AO4709 is Pb-free (meets ROHS & Sony 259
specifications). AO4709L is a Green Product ordering
option. AO4709 and AO4709L are electrically identical.
G
D
S
A
K
G
S
S
A
D/K
D/K
D/K
D/K
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
AO4709
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1.2
-2
-2.4
V
I
D(ON)
40
A
24.5
33
T
J
=125C
33
41
56
m
g
FS
14.5
S
V
SD
-0.76
-1
V
I
S
-4.2
A
C
iss
920
pF
C
oss
190
pF
C
rss
122
pF
R
g
3.6
Q
g
(10V)
18.4
nC
Q
g
(4.5V)
9.3
nC
Q
gs
2.7
nC
Q
gd
4.9
nC
t
D(on)
7.1
ns
t
r
3.4
ns
t
D(off)
18.9
ns
t
f
8.4
ns
t
rr
21.5
ns
Q
rr
12.5
nC
SCHOTTKY PARAMETERS
V
F
0.45
0.5
V
0.007
0.05
3.2
10
12
20
C
T
37
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
mA
V
R
=30V, T
J
=125C
V
R
=30V, T
J
=150C
Junction Capacitance
V
R
=15V
Forward Voltage Drop
I
F
=1.0A
I
rm
Maximum reverse leakage current
V
R
=30V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-8A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
Reverse Transfer Capacitance
I
F
=-8A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-8A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.8
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 4: Sept 2005
Alpha & Omega Semiconductor, Ltd.
AO4709
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-3V
-6V
-3.5V
-4V
-10V
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
10
15
20
25
30
35
40
45
50
55
60
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.80
1.00
1.20
1.40
1.60
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=-10V
V
GS
=-4.5V
0
10
20
30
40
50
60
70
80
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-7.5A
25C
125C
I
D
=-7.5A
-4.5V
-5V
Alpha & Omega Semiconductor, Ltd.
AO4709
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
4
8
12
16
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts
)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acit
a
n
ce (
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
aliz
ed
T
r
an
sien
t
T
h
e
r
m
al R
esist
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
mps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
V
DS
=-15V
I
D
=-8A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AO4
709
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
(Am
p
s
)
0
50
100
150
200
250
0
5
10
15
20
25
30
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
C
ap
aci
t
an
ce (
p
F
)
0.001
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
Temperature (C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
eakag
e C
u
r
r
en
t
(
mA
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
mal
i
z
ed
T
r
an
si
en
t
T
h
er
mal
R
esi
st
an
ce
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
25
50
75
100
125
150
175
Temperature (C)
V
F
(Vo
l
ts
)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=
40C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=1A
25C
I
F
=3A
V
R
=30V
125C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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